GaN-SiC Broadband Amplifier
Product Features
• Solid-state linear amplifier design
• GaN on SiC HEMT
• Small and light weight
• Wide Band Operation 500 ~ 2500MHz
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• Harsh environmental condition
• High efficiency
• 50W typical Psat
• Built-in sequence bias included
RUP15050-11
Applications
• Broadband communication
• Broadcasting
• General purpose RF amplifier
• Linear applications in the L/S Frequency Bands
Description
RUP15050-11 has been designed for RF system application frequencies from 500 ~ 2500MHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide bandwidth and
high efficiency.
Electrical Specifications
@ VDD=30VDC, T=25°C, 50Ω System
PARAMETER
Operating Frequency
Operating Bandwidth
Output Power CW
Output Power @ P3dB G.C.P
Small Signal Gain
Small Signal Gain Flatness
Input VSWR
Harmonics @ P1dB G.C.P
Spurious Signals
Operating Voltage
Supply Current @ P
sat
Supply Current @ P
3dB
UNIT
MHz
MHz
W
W
dB
dB
-
dBc
dBc
V
A
A
MIN
500
-
-
-
45
-
-
10
60
28
-
-
TYP
-
2000
50
20
60
± 1.5
2.0:1
-
70
30
7
6
MAX
2500
-
-
-
-
± 2.0
2.5 : 1
-
-
32
-
-
SYMBOL
f
O
BW
P
SAT
P
3dB
G
S
ΔG
S
S
11
H
P1dB
Spur
V
I
DD
I
DD
* Please DO NOT ENTER RF INPUT POWER OVER +5dBm. (to prevent the main transistor from damaging)
Environmental Characteristics
PARAMETER
Operating Case Temperature
Storage Temperature
UNIT
°C
°C
MIN
0
-40
TYP
-
-
MAX
70
85
SYMBOL
T
C
T
S
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
1
/
6
All specifications may change without notice
Version 1.0
GaN-SiC Broadband Amplifier
Typical Performance
@ 25°C
P3 Output Power, Current, Efficiency
Freq.
MHz
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Output
dBm
46.35
46.60
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
47.00
46.58
Output
W
43.15
45.71
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
50.00
45.50
Current
A
4.17
4.40
5.52
7.04
7.29
7.18
7.32
6.37
5.34
4.63
5.24
5.78
6.27
6.12
6.29
6.30
6.27
6.06
5.61
5.29
5.68
RUP15050-11
Psat Output Power, Current, Efficiency
Output
dBm
46.35
46.60
47.10
47.10
48.04
49.30
50.20
48.42
50.00
48.51
47.65
47.32
47.86
48.11
48.13
48.40
49.00
48.99
49.05
48.01
46.58
Output
W
43.15
45.71
51.29
51.29
63.68
85.11
104.71
69.50
100.00
70.96
58.21
53.95
61.09
64.71
65.01
69.18
79.43
79.25
80.35
63.24
45.50
Current
A
4.17
4.40
5.69
7.31
8.82
9.47
10.56
7.54
8.90
6.02
6.38
6.34
7.23
7.45
7.59
7.99
7.99
7.80
7.32
6.16
5.68
Efficiency
%
36.96
37.10
32.19
25.06
25.79
32.10
35.41
32.92
40.13
42.10
32.58
30.39
30.18
31.02
30.59
30.92
35.51
36.29
39.20
36.67
28.61
Efficiency
%
36.96
37.10
32.43
25.43
24.55
24.93
24.45
28.10
33.52
38.66
34.16
30.97
28.55
29.25
28.46
28.41
28.55
29.54
31.91
33.84
28.61
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
2
/
6
All specifications may change without notice
Version 1.0
GaN-SiC Broadband Amplifier
Typical Performance
@ 25°C
RUP15050-11
P ower [W att]
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
P1
[Watt]
P3
[Watt]
PSat
[Watt]
45.00
40.00
35.00
30.00
25.00
20.00
15.00
10.00
5.00
0.00
P1
[%]
P3
[%]
50W
[%]
PSat
[%]
G ain [dB]
70.00
68.00
66.00
64.00
62.00
60.00
58.00
56.00
54.00
52.00
50.00
P1
[dB]
P3
[dB]
50W
[dB]
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
3
/
6
All specifications may change without notice
Version 1.0
GaN-SiC Broadband Amplifier
Small Signal Gain @ Input Power
: -10dBm, 25°C
RUP15050-11
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
RF Connectors In/Out
Cooling
UNIT
mm
-
-
VALUE
140.0 x 90 x 19
MCX / SMA Female
External Heat sink + airflow
LIMIT
Max
-
-
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
4
/
6
All specifications may change without notice
Version 1.0
GaN-SiC Broadband Amplifier
Outline Drawing
* Unit: mm[inch] | Tolerance
±0.2[.008]
RUP15050-11
Pin Description
Pin No
1
2
3
4
5
Description
On/Off
GND
GND
GND
Temp
Specifications
Enable / Disable
Ground
Ground
Ground
Reporting Temperature data
[0.75V/25℃]
Pin No
6
7
8
9
10
Description
GND
GND
V
DD
V
DD
V
DD
Specifications
Ground
Ground
+30 Drain Voltage
+30 Drain Voltage
+30 Drain Voltage
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
5
/
6
All specifications may change without notice
Version 1.0
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
