GaN-SiC Broadband Amplifier
Product Features
• Solid-state linear amplifier design
• GaN on SiC HEMT
• Small and light weight
• Wide Band Operation 500 ~ 2500MHz
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• Harsh environmental condition
• High efficiency
• 30W typical Psat
RUP15030-10
Applications
• Broadband communication
• Broadcasting
• General purpose RF amplifier
• Linear applications in the L/S Frequency Bands
Description
RUP15030-10 has been designed for RF system application frequencies from 500 ~ 2500MHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide bandwidth
and high efficiency.
Electrical Specifications
@ VDD=28VDC, T=25°C, 50Ω System
PARAMETER
Operating Frequency
Operating Bandwidth
Output Power CW
Output Power @ P3dB G.C.P
Small Signal Gain
Small Signal Gain Flatness
Input VSWR
Harmonics @ P1dB G.C.P
Spurious Signals
Operating Voltage
Supply Current @ P
sat
Supply Current @ P
3dB
UNIT
MHz
MHz
W
W
dB
dB
-
dBc
dBc
V
A
A
MIN
500
-
20
5
10
-
-
10
60
27
-
-
TYP
-
2000
30
15
13
± 1.5
2.0:1
-
70
28
4.0
2.5
MAX
2500
-
-
-
-
± 2.0
2.5 : 1
-
-
30
5.0
3.5
SYMBOL
f
O
BW
P
SAT
P
3dB
G
S
ΔG
S
S
11
H
P1dB
Spur
V
I
DD
I
DD
* Please DO NOT ENTER RF INPUT POWER OVER +39dBm. (to prevent the main transistor from damaging)
Environmental Characteristics
PARAMETER
Operating Case Temperature
Storage Temperature
UNIT
°C
°C
MIN
0
-40
TYP
-
-
MAX
70
85
SYMBO
L
T
C
T
S
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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All specifications may change without notice
Version 2.0
GaN-SiC Broadband Amplifier
Typical Performance
@ 25°C
P3 Output Power, Current, Efficiency
Freq.
MHz
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Output
dBm
43.68
41.59
41.60
41.56
41.74
40.81
39.00
37.95
39.73
39.96
40.83
40.08
41.78
40.94
42.82
44.82
45.90
45.83
45.61
44.87
44.98
Output
W
23.33
14.42
14.45
14.32
14.93
12.05
7.94
6.24
9.40
9.91
12.11
10.19
15.07
12.42
19.14
30.34
38.90
38.28
36.39
30.69
31.48
Current
A
1.89
1.65
1.61
1.86
2.23
2.27
2.03
1.83
2.24
2.25
2.51
2.39
2.64
2.37
2.67
2.92
2.82
2.64
2.73
2.78
3.04
RUP15030-10
Psat Output Power, Current, Efficiency
Output
dBm
46.69
45.02
44.36
44.74
45.26
45.74
46.01
45.93
46.36
46.54
46.77
46.56
46.61
46.56
46.87
47.33
47.47
47.05
47.00
47.00
46.74
Output
W
46.67
31.77
27.29
29.79
33.57
37.50
39.90
39.17
43.25
45.08
47.53
45.29
45.81
45.29
48.64
54.08
55.85
50.70
50.12
50.12
47.21
Current
A
2.51
1.89
1.81
2.38
2.81
3.58
4.09
3.91
4.00
3.76
4.76
4.85
4.47
4.45
4.12
3.67
3.24
2.96
3.10
3.42
3.74
Efficiency
%
59.79
52.46
43.66
33.39
33.10
28.14
26.41
29.48
31.07
31.16
30.01
25.73
27.62
29.63
35.02
44.91
54.84
53.35
48.88
42.75
36.19
Efficiency
%
36.83
29.20
29.61
25.25
22.00
17.38
13.01
11.54
14.02
14.74
16.06
14.03
18.78
17.34
23.75
34.75
46.53
48.60
44.19
36.49
33.70
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
2
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All specifications may change without notice
Version 2.0
GaN-SiC Broadband Amplifier
Typical Performance
@ 25°C
RUP15030-10
P3 & Psat Power [W]
60.00
50.00
40.00
30.00
20.00
10.00
0.00
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
P3
[W att]
PSat
[W att]
P3 & Psat Efficiency [%]
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
P3
[%]
PSat
[%]
P3 & Psat Current [A]
6.00
5.00
4.00
3.00
2.00
P3 Current
1.00
Ps at Current
0.00
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
3
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7
All specifications may change without notice
Version 2.0
GaN-SiC Broadband Amplifier
Small Signal Gain
@ Input Power : -10dBm, 25°C
RUP15030-10
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
4
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7
All specifications may change without notice
Version 2.0
GaN-SiC Broadband Amplifier
Precautions
RUP15030-10
This product is a Wideband Pallet Amplifier based on a Gallium Nitride Transistor.
The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are
applied in accordance to the Sequence during Turn-On and Turn-Off.
The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and
negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier.
The required sequence for power supply is as follows.
During Turn-On
1. Connect GND to Pin 4(GND).
2. Apply 5V to Pin 2(Ref.).
3. Apply -5V to Pin 3(V
GS
.).
4. Apply 28V to Pin 1(V
DD
.).
5. Turn on the pin 2 and pin 3, then turn on the pin 1.
6. Apply the RF Power.
During Turn-Off
1. Turn off RF power.
2. Turn off pin 1, then turn off the pin 3 and pin 2.
3. Remove all connections.
Turn On
Turn Off
Sequence Timing Diagram
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
RF Connectors In/Out
Cooling
UNIT
mm
-
-
VALUE
90.0 x 50.0 x 16.0
Available SMA Female
External Heat sink + airflow
LIMIT
Max
-
-
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
5
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7
All specifications may change without notice
Version 2.0
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