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GBU602

产品描述2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小262KB,共2页
制造商YFWDIODE
官网地址http://www.yfwdiode.com/
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GBU602概述

2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

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GBU6005 THRU GBU610
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
REVERSE VOLTAGE:
50 to 1000 VOLTS
FORWARD CURRENT:
6.0 AMPERE
FEATURES
· Glass passivated chip junction
· Reliable low cost construction utilizing molded
plastic technique
· Ideal for printed circuit board
· Low forward voltage drop
· Low reverse leakage current
· High surge current capability
R7,6
3.2X45°
GBU
MECHANICAL DATA
Case: Molded plastic, GBU
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
Mounting position: Any
Weight: 0.15ounce, 4.0gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
GBU6005 GBU601
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current at
Peak Forward Surge Current,
8.3ms single half-sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage
at 6.0A DC and 25
Maximum Reverse Current
at Rated DC Blocking Voltage
at T
A
=25
T
A
=125
I
R
C
J
R
R
T
J
JA
JC
GBU602
GBU604
GBU606
GBU608
GBU610
Units
Volts
Volts
Volts
Amp
V
RRM
V
RMS
V
DC
50
35
50
100
70
100
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000
700
1000
T
C
=100
(Note 1),(Note 2)
I
(AV)
I
FSM
175
Amp
V
F
1.0
5.0
500
210
7.4
2.2
-55 to +150
94
Volts
uAmp
pF
/W
/W
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance (Note 1),(Note 2)
Typical Thermal Resistance (Note 1),(Note 2)
Operating and Storage Temperature Range
Tstg
NOTES:
1- Units case mounted on 2.6 x 1.4 x 0.06" thick (6.5 x 3.5 x 0.15 cm) Al. Plate heatsink
2- Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws
3- Measured at 1 MH
Z
and applied reverse voltage of 4.0 VDC.

GBU602相似产品对比

GBU602 GBU6005 GBU606 GBU608 GBU604 GBU601
描述 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W 2.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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