74HC2G34; 74HCT2G34
Dual buffer gate
Rev. 01 — 6 October 2006
Product data sheet
1. General description
The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device.
The 74HC2G34; 74HCT2G34 provides two buffers.
2. Features
I
I
I
I
Wide supply voltage range from 2.0 V to 6.0 V
Complies with JEDEC standard no. 7A
High noise immunity
ESD protection:
N
HBM JESD22-A114-D exceeds 2000 V
N
MM JESD22-A115-A exceeds 200 V
Low power dissipation
Balanced propagation delays
Unlimited input rise and fall times
Multiple package options
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
I
I
I
I
I
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC2G34GW
74HC2G34GV
74HCT2G34GW
74HCT2G34GV
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
SC-88
SC-74
SC-88
SC-74
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT363
SOT457
SOT363
SOT457
Type number
4. Marking
Table 2.
Marking
Marking code
PA
P34
UA
U34
Type number
74HC2G34GW
74HC2G34GV
74HCT2G34GW
74HCT2G34GV
NXP Semiconductors
74HC2G34; 74HCT2G34
Dual buffer gate
5. Functional diagram
1
1A
1Y
6
1
1
6
3
2A
2Y
4
3
1
4
mnb064
A
Y
001aac536
mnb063
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram (one gate)
6. Pinning information
6.1 Pinning
74HC2G34
74HCT2G34
1A
GND
1
2
6
5
1Y
V
CC
2Y
2A
3
001aaf303
4
Fig 4. Pin configuration
6.2 Pin description
Table 3.
Symbol
1A
GND
2A
2Y
V
CC
1Y
Pin description
Pin
1
2
3
4
5
6
Description
data input
ground (0 V)
data input
data output
supply voltage
data output
74HC_HCT2G34_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2006
2 of 14
NXP Semiconductors
74HC2G34; 74HCT2G34
Dual buffer gate
7. Functional description
Table 4.
Input
nA
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
Function table
[1]
Output
nY
L
H
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
−0.5
V to V
CC
+ 0.5 V
[1]
[1]
[1]
[1]
[1]
Min
−0.5
-
-
-
-
-
−65
[2]
Max
+7.0
±20
±20
±25
+50
−50
+150
250
Unit
V
mA
mA
mA
mA
mA
°C
mW
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SC-88 and SC-74 packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t
r
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
rise time
except for Schmitt trigger inputs
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
f
fall time
except for Schmitt trigger inputs
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
74HC_HCT2G34_1
Conditions
Min
2.0
0
0
−40
-
-
-
-
-
-
Typ
5.0
-
-
+25
-
-
-
-
-
-
Max
6.0
V
CC
V
CC
+125
1000
500
400
1000
500
400
Unit
V
V
V
°C
ns
ns
ns
ns
ns
ns
Type 74HC2G34
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2006
3 of 14
NXP Semiconductors
74HC2G34; 74HCT2G34
Dual buffer gate
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t
r
t
f
Recommended operating conditions
…continued
Parameter
supply voltage
input voltage
output voltage
ambient temperature
rise time
fall time
except for Schmitt trigger inputs
V
CC
= 4.5 V
except for Schmitt trigger inputs
V
CC
= 4.5 V
-
-
500
ns
-
-
500
ns
Conditions
Min
4.5
0
0
−40
Typ
5.0
-
-
+25
Max
5.5
V
CC
V
CC
+125
Unit
V
V
V
°C
Type 74HCT2G34
10. Static characteristics
Table 7.
Static characteristics for 74HC2G34
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
T
amb
= 25
°C
V
IH
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−4.0
mA; V
CC
= 4.5 V
I
O
=
−5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage current
supply current
input capacitance
V
I
= GND or V
CC
; V
CC
= 6.0 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 6.0 V
-
1.5
-
pF
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
0.1
0.1
0.1
0.26
0.26
±0.1
1.0
V
V
V
V
V
µA
µA
1.9
4.4
5.9
4.18
5.68
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
74HC_HCT2G34_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2006
4 of 14
NXP Semiconductors
74HC2G34; 74HCT2G34
Dual buffer gate
Table 7.
Static characteristics for 74HC2G34
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
V
IH
Parameter
HIGH-level input voltage
Conditions
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−4.0
mA; V
CC
= 4.5 V
I
O
=
−5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
input leakage current
supply current
V
I
= GND or V
CC
; V
CC
= 6.0 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 6.0 V
T
amb
=
−40 °C
to +125
°C
V
IH
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−4.0
mA; V
CC
= 4.5 V
I
O
=
−5.2
mA; V
CC
= 6.0 V
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
-
-
-
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
±1.0
10.0
V
V
V
V
V
µA
µA
1.9
4.4
5.9
4.13
5.63
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
Min
1.5
3.15
4.2
-
-
-
Typ
-
-
-
-
-
-
Max
-
-
-
0.5
1.35
1.8
Unit
V
V
V
V
V
V
T
amb
=
−40 °C
to +85
°C
74HC_HCT2G34_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2006
5 of 14
模拟与混合信号
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