IS66WV1M16EALL
IS66/67WV1M16EBLL
16Mb LOW VOLTAGE,
PRELIMINARY INFORMATION
OCTOBER 2014
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Features
High-Speed access time :
- 70ns ( IS66WV1M16EALL )
- 55ns (IS66/67WV1M16EBLL )
CMOS Lower Power Operation
Single Power Supply
VDD =1.7V~1.95V(
IS66WV1M16EALL )
VDD =2.5V~3.6V
(IS66/67WV1M16EBLL )
Three State Outputs
Data Control for Upper and Lower bytes
Lead-free Available
DESCRIPTION
The
ISSI
IS66WV1M16EALL and IS66/67WV1M16EBLL are
high-speed,16M bit static RAMs organized as 1M words by
16 bits. It is fabricated using
ISSI’s
high performance CMOS
technology.
This highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When CS1# is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs. The active LOW Write Enable (WE#)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB#) and Lower Byte (LB#) access.
The IS66WV1M16 EALL and IS66/67WV1M16EBLL are
packaged in the JEDEC standard 48-ball mini BGA
(6mm x 8mm). The device is also available for die sales.
FUNCTIONAL BLOCK DIAGRAM
A0~A19
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
Address
Decode Logic
1M X 16
DRAM
Memory Array
COLUMN
I/O
I/O DATA
CIRCUIT
CS2
CS1#
OE#
WE#
UB#
LB#
Control
Logic
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assu
mes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specificatio
n before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected
to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution,
Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. 0A | October 2014
www.issi.com
- SRAM@issi.com
1
IS66WV1M16EALL
IS66/67WV1M16EBLL
POWER UP INITIALIZATION
IS66WV1M16EALL and IS66/67WV1M16EBLL include an on-chip voltage sensor used to launch the power-up
initialization process. When VDD reaches a stable level at or above the VDD (min) the device will require 50μs
to complete its self-initialization process. During the initialization period, CS1# should remain HIGH. When initialize-
ation is complete, the device is ready for normal operation.
50 us
VDD( min)
VDD
0V
Device Initialization
Device for Normal Operation
TRUTH TABLE
Mode
Not
Selected
WE#
CS1#
CS2
OE#
LB#
UB#
I/O0 –
I/O7
I/O8 –
I/O15
VDD Current
X
X
H
H
X
H
X
L
L
L
X
L
H
H
H
X
X
H
H
X
X
X
L
X
H
H
X
X
L
H
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
I
SB1
,I
SB2
I
CC
I
CC
I
CC
I
SB1
,I
SB2
Output
Disabled
Read
H
H
H
L
L
L
H
H
H
L
L
L
L
H
L
H
L
L
D
OUT
High-Z
High-Z
D
OUT
D
OUT
D
OUT
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
Write
L
L
L
L
L
L
H
H
H
X
X
X
L
H
L
H
L
L
Din
High-Z
Din
High-Z
Din
Din
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
IS66WV1M16EALL
(70ns)
IS66WV1M16EBLL
(55ns, 70ns)
IS66WV1M16EBLL
(55ns, 70ns)
Industrial
Automotive , A1
Automotive , A2
–40°C to +85°C
–40°C to +85°C
–40°C to +105°C
1.7V – 1.95V
–
–
2.5V – 3.6V
–
–
–
2.5V – 3.6V
2.5V – 3.6V
Rev. 0A | October 2014
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- SRAM@issi.com
3
IS66WV1M16EALL
IS66/67WV1M16EBLL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
TERM
T
BIAS
V
DD
T
STG
P
T
Notes:
Terminal Voltage with Respect to GND
Temperature Under BIAS
VDD Related to GND
Storage Temperature
Power Dissipation
-0.2 to V
DD
+ 0.3
-40 to +85
-0.2 to +3.8
-65 to +150
1.0
V
°C
V
°C
W
Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only,
and functional operation of the device at these or any other conditions above those indicated in this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.5V-3.6V (IS66/67WV1M16EBLL)
Symbol
Parameter
Test
Conditions
I
oH
= -1 mA
I
oL
= 2.1 mA
V
DD
Min.
Max.
Unit
V
OH
V
OL
V
IH
V
IL
I
LI
I
Lo
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(1)
Input Leakage
Output Leakage
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.2
—
2.2
–0.2
–1
–1
—
0.4
V
DD
+ 0.3
0.6
1
1
V
V
V
V
μA
μA
GND ≤ V
IN
≤ V
DD
GND ≤ V
OUT
≤ V
DD
,
Outputs Disabled
Notes:
1. V
ILL
(min.) = –2.0V AC (pulse width < 10ns). Not 100% tested.
V
IHH
(max.) = V
DD
+ 2.0V AC (pulse width < 10ns). Not 100% test
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.7V-1.95V(IS66WV1M16EALL)
Symbol Parameter
Test
Conditions
I
OH
= -0.1 mA
I
OL
= 0.1 mA
V
DD
Min.
Max
.
—
0.2
V
DD
+ 0.2
0.4
1
1
Unit
V
OH
V
OL
V
IH
V
IL
I
LI
I
Lo
Output HIGH Voltage
Output LOw Voltage
Input HIGH Voltage
(1)
Input LOw Voltage
(1)
Input Leakage
Output Leakage
1.7-1.95V
1.7-1.95V
1.7-1.95V
1.7-1.95V
1.4
—
1.4
–0.2
–1
–1
V
V
V
V
μA
μA
GND ≤ V
IN
≤ V
DD
GND ≤ V
OUT
≤ V
DD
,
Outputs Disabled
Notes:
1. V
ILL
(min.) = –1.0V AC (pulse width < 10ns). Not 100% tested.
V
IHH
(max.) = V
DD
+ 1.0V AC (pulse width < 10ns). Not 100% test
4
Rev. 0A | October 2014
www.issi.com
- SRAM@issi.com
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