SUM110N10-09
Vishay Siliconix
N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
100
R
DS(on)
(Ω)
0.0095 at V
GS
= 10 V
I
D
(A)
110
a
FEATURES
• TrenchFET
®
Power MOSFET
• New Package with Low Thermal Resistance
• 100 % R
g
Tested
D
TO-263
G
G
D S
S
Top
View
Ordering Information:
SUM110N10-09-E3 (Lead (Pb)-free)
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
100
± 20
110
a
87
a
440
75
280
375
c
3.75
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
PCB Mount (TO-263)
d
Symbol
R
thJA
R
thJC
Limit
40
0.4
Unit
°C/W
Document Number: 70677
S10-0644-Rev. G, 22-Mar-10
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1
SUM110N10-09
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
c
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
V
DS
= 15 V, I
D
= 30 A
Min.
100
2
Typ.
Max.
Unit
4
± 100
1
50
250
V
nA
µA
A
120
0.0078
0.0095
0.017
0.025
25
6700
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise
Time
c
c
c
Ω
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
750
280
110
160
pF
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
= 50 V, V
GS
= 10 V, I
D
= 85 A
1.0
24
24
6.2
20
30
200
85
195
110
240
125
55
130
nC
Ω
Turn-Off Delay Time
c
Fall Time
c
V
DD
= 50 V, R
L
= 0.6
Ω
I
D
≅
85 A, V
GEN
= 10 V, R
g
= 2.5
Ω
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
A
V
ns
A
µC
I
F
= 85 A, V
GS
= 0 V
I
F
= 50 A, dI/dt = 100 A/µs
1.0
70
5.5
0.19
1.5
140
10
0.35
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70677
S10-0644-Rev. G, 22-Mar-10
SUM110N10-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
250
V
GS
= 10
V
thru 7
V
200
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
6
V
200
250
150
150
100
5
V
50
4
V
0
0
2
4
6
8
10
100
T
C
= 125 °C
50
25 °C
0
0
1
2
3
4
5
6
7
- 55 °C
V
DS
- Drain-to-Source
Voltage
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
250
T
C
= - 55 °C
R
D S(on)
- On-Resistance (Ω)
200
25 °C
150
125 °C
100
0.012
0.015
Transfer Characteristics
- Transcond
u
ctance (S)
0.009
V
GS
= 10
V
0.006
g
fs
50
0.003
0
0
20
40
60
80
100
120
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
10 000
20
On-Resistance vs. Drain Current
V
DS
= 50
V
I
D
=
85
A
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
8000
C - Capacitance (pF)
C
iss
6000
16
12
4000
8
2000
C
rss
0
0
25
50
75
100
C
oss
4
0
0
50
100
150
200
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 70677
S10-0644-Rev. G, 22-Mar-10
Gate Charge
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3
SUM110N10-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
V
GS
= 10
V
I
D
= 30 A
2.5
R
DS(on)
- On-Resistance
I
S
- So
u
rce C
u
rrent (A)
100
2.0
(Normalized)
T
J
= 150 °C
10
T
J
= 25 °C
1.5
1.0
0.5
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
1000
125
120
100
I
AV
(A) at T
A
= 25 °C
V
(BR)DSS
(V)
I
Da
v
(A)
10
I
AV
(A) at T
A
= 150 °C
1
115
110
105
100
95
0.1
0.00001
0.0001
0.001
t
in
(s)
0.01
0.1
1
90
- 50
Source-Drain Diode Forward Voltage
I
D
= 10 mA
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
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Document Number: 70677
S10-0644-Rev. G, 22-Mar-10
SUM110N10-09
Vishay Siliconix
THERMAL RATINGS
120
1000
100
I
D
- Drain C
u
rrent (A)
100
80
I
D
- Drain C
u
rrent (A)
10
µs
100
µs
10
Limited
by
R
DS(on)*
1 ms
10 ms
100 ms, DC
1
T
C
= 25 °C
Single Pulse
60
40
20
0
0
25
50
75
100
125
150
175
0.1
0.1
*
V
GS
1
10
100
1000
T
C
- Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
N
ormalized Effecti
v
e Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?70677.
Document Number: 70677
S10-0644-Rev. G, 22-Mar-10
www.vishay.com
5
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