HRLO180N10K
Jan 2016
HRLO180N10K
100V N-Channel Trench MOSFET
Features
High Dense Cell Design
Reliable and Rugged
Advanced Trench Process Technology
Key Parameters
Parameter
BV
DSS
I
D
R
DS(on), typ @10V
R
DS(on), typ @4.5V
Value
100
9.3
16
17
Unit
V
A
Application
Power Management in Inverter System
Synchronous Rectification
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
P
D
T
J
, T
STG
T
A
=25
unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25
Drain Current
T
A
= 70
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
T
A
= 70
Operating and Storage Temperature Range
(Note 1)
(Note 2)
T
A
= 25
Value
100
20
9.3
7.4
37
110
3.1
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
Thermal Resistance Characteristics
Symbol
R
R
JL
Parameter
Junction-to-Lead
Junction-to-Ambient (t 10s)
Typ.
--
--
--
Max.
24
40
75
Units
/W
/W
/W
JA
Junction-to-Ambient (steady state)
HRLO180N10K
Electrical Characteristics
T
J
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 9.3 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 5, I
D
= 9.3 A
1.0
--
--
--
--
16
17
34
2.4
18
21
--
V
m
m
S
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, T
J
= 125
V
GS
=
20 V, V
DS
= 0 V
100
--
--
--
--
--
--
--
--
1
100
100
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0 V, V
DS
= 0 V, f = 1MHz
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
5250
260
155
1.7
--
--
--
--
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 80 V, I
D
= 9.3 A,
V
GS
= 10 V
V
DS
= 50 V, I
D
= 9.3 A,
R
G
= 6
--
--
--
--
--
--
--
40
25
210
25
94
13
16
--
--
--
--
--
--
--
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 9.3 A, V
GS
= 0 V
I
S
= 9.3 A, V
GS
= 0 V
di
F
/dt = 100 A/
--
--
--
--
--
--
--
--
50
80
9.3
A
37
1.3
--
--
nC
V
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, I
AS
=13A, V
DD
=25V, R
G
=25 , Starting T
J
=25 C
HRLO180N10K
Typical Characteristics
90
V
GS
10 V
75
Top :
8V
7V
6V
5V
60
4V
3.5 V
3.0 V
45
Bottom : 2.5 V
90
T
J
=25
o
C
75
I
D
, Drain Current [A]
I
D
, Drain Current [A]
60
45
30
15
* Notes :
1. 300us Pulse Test
2. T
C
= 25
o
C
30
15
0
0
1
2
3
4
5
0
0
1
2
3
4
* Notes :
1. V
DS
= 5V
2. 300us Pulse Test
5
6
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
26
24
22
20
18
16
14
Note : T
J
= 25
o
C
100
V
GS
= 4.5V
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
R
DS(ON)
[m ],
Drain-Source On-Resistance
10
125
o
C
25
o
C
* Notes :
1. V
GS
= 0V
2. 300us Pulse Test
12
0
20
40
60
80
100
120
140
1
0.0
0.4
0.8
1.2
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
7000
6000
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
C
iss
Capacitances [pF]
5000
4000
3000
2000
1000
0
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
V
GS
, Gate-Source Voltage [V]
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
10
8
6
4
2
V
DS
= 80V
I
D
= 9.3A
C
oss
C
rss
0
10
20
30
40
50
0
0
20
40
60
80
100
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HRLO180N10K
Typical Characteristics
(continued)
1.2
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
Note :
1. V
GS
= 0 V
2. I
D
= 250 A
0.5
Note :
1. V
GS
= 10 V
2. I
D
= 9.3 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
2
10
Figure 8. On-Resistance Variation
vs Temperature
I
D
, Drain Current [A]
100 us
10
0
I
D
, Drain Current [A]
10
1
Operation in This Area
is Limited by R
DS(on)
10 us
8
6
1 ms
10
-1
* Notes :
1. T
A
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
4
10 ms
2
DC
10
1
10
2
0
25
50
75
100
o
10
-2 -2
10
10
-1
10
0
125
150
V
DS
, Drain-Source Voltage [V]
T
A
, Ambient Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
HRLO180N10K
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
as DUT
12V
200nF
300nF
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
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