SEMICONDUCTOR
1460PTG Series
Distributed Gate Thyristors
(Hockey PUK Version), 1460A
RoHS
RoHS
Nell High Power Products
FEATURES
Distributed center amplifying gate
Metal case with ceramic insulator
lnternational standard case TO-200AC (K-PUK),
Nell’s D-type Capsule
Compliant to RoHS
Low on-state and switching losses
Fast turn-on time, t
gt
≤ 3µs
di/dt > 1500 A/µs
TO-200AC(K-PUK)
(Nell’s D-type Capsule)
TYPICAL APPLICATIONS
DC and AC motor controls
Controlled DC power supplies
AC controllers
Ideal for Impulse Magnetizer
PRODUCT SUMMARY
I
T(AV)
1460A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
Double side cooled, single phase, 50Hz, 180°
half-sine wave
T
hs
VALUES
1460
55
2900
T
hs
I
TSM
50 HZ
60 HZ
50 HZ
60 HZ
25
20
kA
21
2000
1830
1600 to 3200
Typical
Maximum
2.0
250
-40 to 125
ºC
kA
2
s
V
µs
UNIT
A
ºC
A
ºC
I
T(RMS)
I
2
t
V
DRM
/V
RRM
t
gt
T
q
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
,
MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
1600
1800
2000
2400
2600
3000
3200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
l
DRM
/l
RRM
,
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
16
18
20
1460PTGxxD0
24
26
30
32
1700
1900
2100
2500
2700
3100
3300
100
www.nellsemi.com
Page 1 of 8
SEMICONDUCTOR
1460PTG Series
RoHS
RoHS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25°C heatsink temperature double side cooled
t
= 10ms
Maximum peak, one cycle
non-reptitive surge current
I
TSM
VALUES
1460(630)
55/(85)
2900
20
21
UNIT
A
ºC
A
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
No voltage
reapplied
100%V
RRM
reapplied
No voltage
reapplied
100%V
RRM
reapplied
A
16.8
Sinusoidal half wave,
initial T
J
= T
J
maximum
17.6
2000
1830
1411
1286
20000
1.25
V
1.50
0.48
mΩ
0.44
2.90
1000
mA
1500
V
kA
2
√
s
kA
2
s
Maximum l²t for fusing
t
= 8.3ms
I
2
t
t
= 10ms
t
= 8.3ms
Maximum l²√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
√t
V
T(TO)1
V
T(TO)2
t = 0.1 to 10 ms, no voltage reapplied
(16.7% x
π
x l
T(AV)
< I <
π
x l
T(AV)
),T
J
=T
J
maximum
(I
>
π
x l
T(AV)
),T
J
=T
J
maximum
(16.7% x
π
x l
T(AV)
< I <
π
x l
T(AV)
),T
J
=T
J
maximum
(I
>
π
x l
T(AV)
),T
J
=T
J
maximum
l
pk
=3000A, T
J
=T
J
maximum
,
t
p
= 10 ms sine pulse
T
J
= 25°C, anode supply 12V resistive load
r
t1
r
t2
V
TM
l
H
l
L
SWITCHING
PARAMETER
Minimum non-repetitive rate of rise
of turned-on current
Typical turn-off time
Maximum gate controlled turn-on
delay time
Maximum turn-on time
Typical reverse recovery time
Typical recovered charge
Typical reverse recovery current
SYMBOL
dl/dt
TEST CONDITIONS
V
D
= 67%
V
DRM
,
I
FG
= 2A,
T
case
=1
25°C
l
TM
= 1000A, T
J
=T
J
maximum, dl/dt = 60A/µs.
V
R
= 50V, dV/dt = 20 V/µs,
V
DR
= 33% V
DRM,
t
p
= 1000µs
VALUES
1500
UNIT
A/µs
t
q
200
t
d
t
gt
t
rr
Q
rr
I
rm
1.6
V
D
= 67%, V
DRM
, I
TM
= 1000A, dl/dt = 60A/µs.
I
FG
= 2A,
t r = 0.5µs, T
J
= 25°C
3.0
9.5
I
TM
= 1000A, t
p
= 1000µs, dl/dt = 60A/µs.
V
R
= 50V
3500
315
µs
µC
A
BLOCKING
PARAMETER
Minimum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
l
RRM,
l
DRM,
TEST CONDITIONS
T
J
=T
J
maximum, linear to
80%
rated V
DRM
VALUES
200
UNIT
V/µs
T
J
=T
J
maximum, rated V
DRM
/V
RRM
applied
100
mA
www.nellsemi.com
Page 2 of 8
SEMICONDUCTOR
1460PTG Series
RoHS
RoHS
Nell High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
T
J
= -40°C
DC gate current required to trigger
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤ 5
ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤ 5
ms
T
J
= T
J
maximum, t
p
≤ 5
ms
VALUES
TYP.
MAX.
30
UNIT
W
5
3
20
V
5
100
50
Maximum required gate
current/voltage are the lowest
value which will trigger all units
12V anode to cathode applied
25
1.3
1.0
0.8
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with rated
V
DRM
anode to cathode applied
10
-
300
-
-
3.0
-
mA
V
mA
A
T
J
= 25°C
T
J
= 125°C
T
J
= -40°C
DC gate voltage required to trigger
V
GT
T
J
= 25°C
T
J
= 125°C
DC gate current not to trigger
l
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
stg
DC operation single side cooled
R
th(J-hs)
DC operation double side cooled
DC operation single side cooled
Maximum thermal resistance, case to heatsink
R
th(C-hs)
DC operation double side cooled
Mounting force,
±10%
Approximate weight
Case style
TEST CONDITIONS
VALUES
-40 to 125
ºC
UNIT
-40 to 150
0.040
0.020
K/W
0.006
0.003
24500
(2500)
440
TO-200AC (K-PUK), Nell’s D-type Capsule)
N
(kg)
g
R
thJC
CONDUCTION
CONDUCTION ANGEL
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
TEST CONDUCTIONS
UNITS
180°
120°
90°
60°
30°
0.003
0.004
0.005
0.007
0.012
0.003
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
www.nellsemi.com
Page 3 of 8
SEMICONDUCTOR
1460PTG Series
RoHS
RoHS
Nell High Power Products
Fig.1 Current ratings characteristics
130
Fig.2 Current ratings characteristics
130
Maximum allowable heatsink
temperature(˚C)
120
110
100
90
30°
60°
Maximum allowable heatsink
temperature(˚C)
(Single side cooled)
R thJ-hs (DC) = 0.04 K/W
(Single side cooled)
R
thJ-hs
(DC) = 0.04 K/W
120
110
Conduction Period
Conduction Angle
100
30°
90
80
70
60°
90°
120°
180°
80
70
0
90° 120°
180°
DC
0
200
400
600
800
1000 1200
100 200 300 400 500
600 700 800
Average on-state current (A)
Average on-state current (A)
Fig.3 Current ratings characteristics
Fig.4 Current ratings characteristics
130
130
Maximum allowable heatsink
temperature(˚C)
Maximum allowable heatsink
temperature(˚C)
120
110
100
(Double side cooled)
R
thJ-hs
(DC) = 0.02 K/W
120
110
100
(Double side cooled)
R
thJ-hs
(DC) = 0.02 K/W
Conduction Angle
Conduction Period
90
80
70
180°
90
80
70
60
50
40
0
400
800
1200 1600
30°
60°
90°
120°
180°
DC
60
50
40
0
400
800
1200
1600
90°
30°
60°
90°
120°
2000
2400
Average on-state current (A)
Average on-state current (A)
Fig.5 On-state power loss characteristics
3000
Fig.6 On-state power loss characteristics
4000
DC
180°
120°
90°
60°
30°
Maximum average on-state
power loss(W)
2500
2000
1500
1000
500
120°
90°
60°
30°
RMS Limit
Maximum average on-state
power loss(W)
180°
3500
3000
2500
2000
RMS Limit
1500
1000
500
0
Conduction Period
Conduction Angle
T
J
= 125°C
T
J
= 125°C
0
0
400
800
1200
1600
0
500
1000
1500
2000
2500
Average on-state current (A)
Average on-state current (A)
www.nellsemi.com
Page 4 of 8
SEMICONDUCTOR
1460PTG Series
RoHS
RoHS
N
ell
High Power Products
Fig.7 Maximum non-repetitive surge current
single and double side cooled
Peak half sine wave on-state current(A)
18000
16000
14000
12000
10000
8000
6000
1
10
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge
initial T
J
= 125°C
@ 60Hz
0.0083 s
@ 50Hz
0.0100 s
Fig.8 Maximum non-repetitive surge current
single and double side cooled
Peak half sine wave on-state current(A)
22000
20000
18000
16000
14000
12000
10000
8000
6000
0.01
0.1
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained
Initial T
J
= 125°C, @50Hz
No Voltage Reapplied
Rated V
RRM
Reapplied
100
Number of equal amplitude half cycle
current pulses (N)
Pulse train duration (S)
Fig.9 Maximum on-state voltage drop characteristcs
10000
T
J
= 25°C
Instantaneous on-state current (A)
5000
T
J
= 125°C
2000
1000
500
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Instantaneous on-state voltage (V)
Fig.10 Thermal lmpedance
Z
th(J-hs)
characteristics
Transient thermal lmpedance
Z
th(J-hs)
(K/W)
0.1
Steady State Value
R
th(J-hs)
= 0.040 K/W
(Single Side Cooled)
R
th(J-hs)
= 0.020 K/W
(Double Side Cooled)
(DC Operation)
0.01
0.001
0.001
0.01
0.1
1
10
100
Square wave pulse duration (s)
www.nellsemi.com
Page 5 of 8
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
