电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SB351G

产品描述BRIDGE RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小62KB,共2页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SB351G概述

BRIDGE RECTIFIER DIODE

SB351G规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codeunknow
ECCN代码EAR99
Is SamacsysN
配置BRIDGE, 4 ELEMENTS
二极管类型BRIDGE RECTIFIER DIODE
最大正向电压 (VF)1.1 V
湿度敏感等级1
最大非重复峰值正向电流400 A
元件数量4
最高工作温度150 °C
最大输出电流35 A
最大重复峰值反向电压100 V
表面贴装NO
Base Number Matches1

文档预览

下载PDF文档
SB 15, 25, 35G SERIES
High Current 15, 25, 35 AMPS. Single Phase Glass Passivated Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
15.0/25.0/35.0 Amperes
Features
UL Recognized File # E-96005
Metal case with an electrically isolated
epoxy
Rating to 1,000V PRV.
High efficiency
Mounting: thru hole for #8 screw
High temperature soldering guaranteed:
260℃ / 10 seconds at 5 lbs., ( 2.3 kg )
tension
Leads solderable per MIL-STD-202
Method 208
Isolated voltage from case to lead over
2000 volts
DIA .193(4.9)
HOLE FOR #8 SCREW
SB35
1.14(29.0)
1.01(25.7)
.692(17.6)
.612(15.5)
AC
SB35-W
1.14(29.0)
1.01(25.7)
DIA .193(4.9)
HOLE FOR #8 SCREW
.752(19.1)
.672(17.1)
1.14(29.0).692(17.6)
1.01(25.7).612(15.5)
.602(15.3
.522(13.3
1.14(29.0)
1.01(25.7)
.752(19.1)
.672(17.1)
.752(19.1)
.672(17.1)
.490(12.4)
.410(10.4)
.25(6.35)
.040(1.0)
DIA TYP
1.2(30.5)
MIN.
.442(11.23)
.432(10.97)
.442(11.23)
.432(10.97)
.93(23.5
.81(20.5
SB35-M
1.14(29.0)
1.01(25.7)
DIA .193(4.9)
HOLE FOR #8 SCREW
.692(17.6)
.612(15.5)
1.14(29.0).692(17.6)
1.01(25.7).612(15.5)
.692(17.6
.612(15.5
.692(17.6)
.612(15.5)
.034(0.86)
.030(0.76)
.25(6.35)
.93(23.5)
.81(20.5)
.442(11.23)
.432(10.97)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@T
C
= 55℃
SB15
SB25
SB35
Symbol
-05
-1
100
70
100
-2
200
140
200
-4
400
280
400
15.0
25.0
35.0
300
300
400
-6
600
420
600
-8
800
560
800
-10
1000
700
1000
Units
V
V
V
A
A
V
uA
℃/W
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JC
T
J
,T
STG
50
35
50
Peak Forward Surge Current,
SB15
Single Sine-wave Superimposed on SB25
Rated Load (JEDEC method )
SB35
Maximum Instantaneous Forward SB15 7.5A
SB25 12.5A
Voltage Drop Per Element
at Specified Current
SB35 17.5A
Maximum DC Reverse Current
at Rated DC Blocking Voltage Per Element
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
1.1
10
2.0
-50 to +150
Notes: 1. Thermal Resistance from Junction to Case.
2. Suffix “W” - Wire Lead Structure/”M” - Terminal Location Face to Face.
- 770 -

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 324  400  662  2011  237  7  9  14  41  5 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved