SEMICONDUCTOR
500PT Series
Phase Control Thyristors
(Hockey PUK Version), 550A
RoHS
RoHS
Nell High Power Products
FEATURES
Center amplifying gate
Metal case with ceramic insulator
lnternational standard case TO-200AB (B-PUK),
Nell’s C-type Capsule
Lead (Pb)-free
Designed and qualified for industrial level
TYPICAL APPLICATIONS
DC motor controls
Controlled DC power supplies
AC controllers
TO-200AB(B-PUK)
(Nell’s C-type Capsule)
PRODUCT SUMMARY
I
T(AV)
550A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
Double side cooled, single phase, 50Hz, 180°
half-sine wave
T
hs
VALUES
550
55
1100
T
hs
I
TSM
50 HZ
60 HZ
50 HZ
60 HZ
25
8000
A
8380
320
291
1200 to 3000
Typical
100
-40 to 125
kA
2
s
V
µs
ºC
UNIT
A
ºC
A
ºC
I
T(RMS)
I
2
t
V
DRM
/V
RRM
t
q
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
,
MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
1200
1600
1800
2000
2200
2400
2600
3000
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
l
DRM
/l
RRM
,
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
12
16
18
20
500PTxxC0
22
24
26
30
1300
1700
1900
2100
2300
2500
2700
3100
50
www.nellsemi.com
Page 1 of 6
SEMICONDUCTOR
500PT Series
RoHS
RoHS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25°C heatsink temperature double side cooled
t
= 10ms
Maximum peak, one cycle
non-reptitive surge current
I
TSM
VALUES
550(275)
55/(75)
1110
8000
8380
UNIT
A
ºC
A
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
No voltage
reapplied
100%V
RRM
reapplied
No voltage
reapplied
100%V
RRM
reapplied
A
6730
Sinusoidal half wave,
initial T
J
= T
J
maximum
7040
320
291
226
206
3200
0.97
V
0.98
0.74
mΩ
0.73
2.18
600
mA
1000
V
kA
2
√
s
kA
2
s
Maximum l²t for fusing
t
= 8.3ms
I
2
t
t
= 10ms
t
= 8.3ms
Maximum l²√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
√t
V
T(TO)1
V
T(TO)2
t = 0.1 to 10 ms, no voltage reapplied
(16.7% x
π
x l
T(AV)
< I <
π
x l
T(AV)
),T
J
=T
J
maximum
(I
>
π
x l
T(AV)
),T
J
=T
J
maximum
(16.7% x
π
x l
T(AV)
< I <
π
x l
T(AV)
),T
J
=T
J
maximum
(I
>
π
x l
T(AV)
),T
J
=T
J
maximum
l
pk
=1635A, T
J
=T
J
maximum
,
t
p
= 10 ms sine pulse
T
J
= 25°C, anode supply 12V resistive load
r
t1
r
t2
V
TM
l
H
l
L
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
SYMBOL
dl/dt
TEST CONDITIONS
Gate drive 20V, 20Ω,
t
r
≤ 1µs
T
J
=T
J
maximum, anode voltage
≤ 80%
V
DRM
Gate current 1A, dl
g
/dt =1 A/µs
V
d
= 0.67 V
DRM
, T
J
= 25°C
l
TM
= 550A, T
J
=T
J
maximum, dl/dt = 40A/µs.
V
R
= 50V, dV/dt = 20 V/µs, gate 0 V 100Ω,
tp = 500µs
VALUES
1000
UNIT
A/µs
t
d
1.0
µs
Typical turn-off time
t
q
100
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
l
RRM,
l
DRM,
TEST CONDITIONS
T
J
=T
J
maximum linear to
80%
rated V
DRM
VALUES
500
UNIT
V/µs
T
J
=T
J
maximum, rated V
DRM
/V
RRM
applied
50
mA
www.nellsemi.com
Page 2 of 6
SEMICONDUCTOR
500PT Series
RoHS
RoHS
Nell High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
T
J
= -40°C
DC gate current required to trigger
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤ 5
ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤ 5
ms
T
J
= T
J
maximum, t
p
≤ 5
ms
VALUES
TYP.
MAX.
10
UNIT
W
2
3
20
V
5
200
100
Maximum required gate
current/voltage are the lowest
value which will trigger all units
12V anode to cathode applied
50
2.5
1.8
1.1
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with rated
V
DRM
anode to cathode applied
10
-
200
-
-
3
-
mA
V
mA
A
T
J
= 25°C
T
J
= 125°C
T
J
= -40°C
DC gate voltage required to trigger
V
GT
T
J
= 25°C
T
J
= 125°C
DC gate current not to trigger
l
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
stg
DC operation single side cooled
R
thJ-hs
DC operation double side cooled
DC operation single side cooled
Maximum thermal resistance, case to heatsink
R
thC-hs
DC operation double side cooled
Mounting force,
±10%
Approximate weight
Case style
TO-200AB (B-PUK), Nell’s C-type Capsule
TEST CONDITIONS
VALUES
-40 to 125
ºC
UNIT
-40 to 150
0.11
0.05
K/W
0.011
0.006
9800
(1000)
250
N
(kg)
g
R
thJC
CONDUCTION
CONDUCTION ANGEL
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
TEST CONDUCTIONS
UNITS
180°
120°
90°
60°
30°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
www.nellsemi.com
Page 3 of 6
SEMICONDUCTOR
500PT Series
RoHS
RoHS
Nell High Power Products
Fig.1 Current ratings characteristics
130
130
Fig.2 Current ratings characteristics
Maximum allowable heatsink
temperature(˚C)
Maximum allowable heatsink
temperature(˚C)
120
110
100
90
80
70
30°
(Single side cooled)
R
thJ-hs
(DC) = 0.11K/W
120
110
100
90
80
70
60
50
40
30
20
0
100
200
30°
60°
(Single side cooled)
R
thJ-hs
(DC) = 0.11 K/W
Conduction Period
Conduction Angle
60
50
40
30
0
100
60°
90°
120°
180°
90°
120°
180°
DC
600
700
200
300
400
500
300
400
500
Average on-state current (A)
Average on-state current (A)
Fig.3 Current ratings characteristics
Fig.4 Current ratings characteristics
130
120
130
Maximum allowable heatsink
temperature(˚C)
110
100
90
80
70
60
50
40
30
20
0
200
400
600
800
30°
60°
90°
120°
180°
Conduction Angle
Maximum allowable heatsink
temperature(˚C)
(Double side cooled)
R
thJ-hs
(DC) = 0.05 K/W
120
110
100
90
80
70
60
50
40
30
20
0
200
400
30°
60°
(Double side cooled)
R
thJ-hs
(DC) = 0.05 K/W
Conduction Period
90°
120°
180°
DC
600
800
1000 1200
Average on-state current (A)
Average on-state current (A)
Fig.5 On-state power loss characteristics
1600
Fig.6 On-state power loss characteristics
1600
DC
180°
90°
Maximum average on-state
power loss(W)
Maximum average on-state
power loss(W)
1400
1200
1000
800
600
120°
60°
30°
RMS Limit
1400
1200
1000
800
600
400
200
0
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Conduction Period
400
200
0
0
100
200
300
400
500
600
700
T
J
= 125°C
T
J
= 125°C
0
200
400
600
800
1000 1200
Average on-state current (A)
Average on-state current (A)
www.nellsemi.com
Page 4 of 6
SEMICONDUCTOR
500PT Series
RoHS
RoHS
N
ell
High Power Products
Fig.7 Maximum non-repetitive surge current
single and double side cooled
Peak half sine wave on-state current(A)
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
10
100
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge
initial T
J
= 125°C
@ 60Hz
0.0083 s
@ 50Hz
0.0100 s
Fig.8 Maximum non-repetitive surge current
single and double side cooled
Peak half sine wave on-state current(A)
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
0.01
0.1
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained
Initial T
J
= 125°C, @50Hz
No Voltage Reapplied
Rated V
RRM
Reapplied
Number of equal amplitude half cycle
current pulses (N)
Pulse train duration (S)
Fig.9 On-state voltage drop characteristcs
10000
1
Fig.11 Gate characteristics
Instantaneous on-state current (A)
Instantaneous gate voltage (V)
T
J
= 25°C
Steady state value
R thJ-hs = 0.11K/W
(Single side cooled)
R thJ-hs = 0.05K/W
(Single side cooled)
T
J
= 125°C
0.1
(Double side cooled)
(DC operation)
1000
(Double side cooled)
0.01
100
0
1
2
3
4
5
6
7
8
9
0.001
0.001
0.01
0.1
1
10
Instantaneous on-state voltage (V)
Instantaneous gate current (A)
Fig.11 Thermal lmpedance
Z
thJ-hs
characteristics
Transient thermal lmpedance
Z
thJ-hs
(K/W)
100
10
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10 ohms; tr<=1µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10 ohms
tr<=1 µs
(a)
(b)
Tj = -40°C
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Tj = 25°C
Tj = 125°C
1
(1)
(2)
(3) (4)
VGD
IGD
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Square wave pulse duration (s)
www.nellsemi.com
Page 5 of 6
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
