SiHG47N60EF
www.vishay.com
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
max. at 25 °C ()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
225
31
63
Single
650
0.067
FEATURES
• Fast Body Diode MOSFET Using E Series
Technoloy
• Reduced t
rr
, Q
rr
, and I
RRM
• Low Figure-of-Merit (FOM) R
on
x Q
g
• Low Input Capacitance (C
iss
)
• Low switching losses due to reduced Q
rr
• Ultra Low Gate Charge (Q
g
)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
D
APPLICATIONS
• Telecommunications
- Server and Telecom Power Supplies
• Lighting
- High-Intensity Lighting (HID)
- Light Emitting Diodes (LEDs)
• Consumer and Computing
- ATX Power Supplies
• Industrial
- Welding
- Battery Chargers
• Renewable Energy
- Solar (PV Inverters)
• Switching Mode Power Supplies (SMPS)
• Applications using the following topologies
- LLC
- Phase Shifted Bridge (ZVS)
- 3-level Inverter
- AC/DC Bridge
TO-247AC
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-247AC
SiHG47N60EF-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
d
Soldering Recommendations (Peak Temperature)
c
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J
, T
stg
T
J
= 125 °C
for 10 s
dV/dt
LIMIT
600
± 20
30
47
29
138
3
1500
379
-55 to +150
37
9.7
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 73.5 mH, R
g
= 25
,
I
AS
= 6.4 A.
c. 1.6 mm from case.
d. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
S13-2236-Rev. D, 28-Oct-13
Document Number: 91559
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHG47N60EF
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
40
0.33
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related
a
Effective Output Capacitance, Time
Related
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
T
J
= 25 °C, I
F
= I
S
= 24 A,
dI/dt = 100 A/μs, V
R
= 25 V
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
o(er)
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 24 A
V
DS
= 30 V, I
D
= 24 A
600
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.056
17
4854
195
6
208
651
150
31
63
30
61
94
58
0.67
-
-
4.0
± 100
1
500
0.067
-
-
-
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
pF
-
-
225
-
-
60
92
141
87
-
ns
nC
V
DS
= 0 V to 480 V, V
GS
= 0 V
C
o(tr)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
f = 1 MHz, open drain
V
DD
= 480 V, I
D
= 24 A,
V
GS
= 10 V, R
g
= 4.4
V
GS
= 10 V
I
D
= 24 A, V
DS
= 480 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
168
1.2
14
47
A
138
1.2
336
2.4
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 24 A, V
GS
= 0 V
Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
S13-2236-Rev. D, 28-Oct-13
Document Number: 91559
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHG47N60EF
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
150
Vishay Siliconix
125
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
100
Top 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
Bottom 6.0 V
T
J
= 25 °C
3.0
I
D
= 24 A
2.5
2.0
75
1.5
50
1.0
25
5.0 V
0.5
0
0
5
10
15
20
25
30
0.0
- 60 - 40 - 20
V
GS
= 10 V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
100
100 000
Top 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
Bottom 5.0 V
I
D
, Drain-to-Source Current (A)
80
10 000
C
iss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
60
C, Capacitance (pF)
1000
C
oss
40
100
C
rss
20
T
J
= 150 °C
10
0
0
5
10
15
1
25
30
0
100
200
300
400
500
600
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
150
T
J
= 150 °C
30
5000
I
D
, Drain-to-Source Current (A)
120
25
20
90
C
oss
(pF)
T
J
= 25 °C
C
oss
500
E
oss
15
60
10
30
V
DS
= 26 V
5
0
0
5
10
15
20
25
50
0
100
200
300
V
DS
400
500
600
0
V
GS
,
Gate-to-Source
Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S13-2236-Rev. D, 28-Oct-13
Fig. 6 - C
oss
and E
oss
vs. V
DS
Document Number: 91559
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
E
oss
(μJ)
SiHG47N60EF
www.vishay.com
Vishay Siliconix
50
24
V
GS
,
Gate-to-Source
Voltage (V)
20
V
DS
= 480 V
V
DS
= 300 V
V
DS
= 120 V
I
D
, Drain Current (A)
0
50
100
150
200
250
300
45
40
35
30
25
20
15
10
5
16
12
8
4
0
0
25
50
Q
G
, Total
Gate
Charge (nC)
75
100
T
C
, Case Temperature (°C)
125
150
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
1000
V
DS
, Drain-to-Source Breakdown Voltage (V)
800
I
D
= 1 mA
775
750
725
700
675
650
625
600
- 60 - 40 - 20
I
SD
, Reverse Drain Current (A)
100
T
J
= 150 °C
10
T
J
= 25 °C
1
0.1
0.2
0.4
0.6
0.8
1
1.2
V
GS
= 0 V
1.4
1.6
1.8
0
20
40
60
80 100 120 140 160
V
SD
,
Source-to-Drain
Voltage (V)
T
J
, Junction Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
1000
Operation in this area limited
by R
DS(on)
*
100
I
D
, Drain Current (A)
I
DM
Limited
10
100 µs
1
1 ms
0.1
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
10
10 ms
BVDSS Limited
100
1000
0.01
V
DS
- Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
S13-2236-Rev. D, 28-Oct-13
Document Number: 91559
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHG47N60EF
www.vishay.com
Vishay Siliconix
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single
Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
V
DS
V
GS
R
G
R
D
V
DS
t
p
V
DD
+
-
V
DD
D.U.T.
V
DS
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
I
AS
Fig. 16 - Unclamped Inductive Waveforms
Fig. 13 - Switching Time Test Circuit
V
DS
90 %
10 V
Q
GS
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GD
V
G
Fig. 14 - Switching Time Waveforms
Charge
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
D.U.T
I
AS
+
-
V
DD
12 V
0.2 µF
0.3 µF
+
10 V
t
p
0.01
Ω
V
GS
3 mA
D.U.T.
-
V
DS
Fig. 15 - Unclamped Inductive Test Circuit
I
G
I
D
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S13-2236-Rev. D, 28-Oct-13
Document Number: 91559
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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