CEDM8004
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM8004 is an
enhancement-mode P-Channel MOSFET, manufactured
by the P-Channel DMOS process, designed for high
speed pulsed amplifier and driver applications. This
MOSFET offers low rDS(on) and low threshold voltage.
MARKING CODE: V
SOT-883L CASE
• Devices are
Halogen Free
by design
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable devices
MAXIMUM RATING:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
FEATURES:
• ESD protection up to 2kV
• Low rDS(on)
• Low threshold voltage
• Logic level compatible
• Small, TLP™ 1x0.6mm, SOT-883L, ultra low profile
0.4mm leadless surface mount package
• Complimentary N-Channel MOSFET CEDM7004
SYMBOL
VDS
VGS
ID
PD
TJ, Tstg
UNITS
V
V
mA
mW
°C
30
8.0
450
100
-65 to +150
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
VDS=30V, VGS=0
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=0, IS=100mA
VGS=4.5V, ID=430mA
VGS=2.5V, ID=200mA
VGS=1.8V, ID=100mA
VDS =10V, ID=100mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V,
VDS=25V,
VDS=10V,
VDS=10V,
VDS=10V,
VGS=0, f=1.0MHz
VGS=0, f=1.0MHz
VGS=4.5V, ID=1.0A
VGS=4.5V,
VGS=4.5V,
ID=1.0A
ID=1.0A
200
8.9
45
8.5
0.88
0.35
0.128
30
0.5
1.0
1.6
2.6
MAX
3.0
1.0
1.0
1.1
1.1
2.0
3.3
10
55
15
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
R4 (1-November 2012)
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