Ordering number : ENN6293A
SBE802
Schottky Barrier Diode
SBE802
100V, 400mA Rectifier
Applications
•
Package Dimensions
unit : mm
1294
[SBE802]
2.9
High frequency rectification (switching regulators,
converters, and choppers).
Features
•
•
•
•
5
4
3
0.6
Low forward voltage (VF max=0.7V).
Fast reverse recovery time (trr max=10ns).
Low switching noise.
Low leakage current and high reliability due to highly
reliable planar structure.
1
0.95
2
0.4
0.6
1.6
2.8
0.05
0.2
0.15
0.7
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
SANYO : CPH5
0.2
Specifications
Absolute Maximum Ratings
at Ta=25°C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
0.4
0.9
Ratings
100
100
400
5
--55 to +125
--55 to +125
Unit
V
V
mA
A
°C
°C
Electrical Characteristics
at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)
IR=200µA
IF=200mA
IF=400mA
VR=45V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm
!0.8mm)
2
Conditions
Ratings
min
100
0.5
0.55
0.7
50
20
10
110
typ
max
Unit
V
V
V
µA
pF
ns
°C/W
Marking : SA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72600 GI IM / 80699 GI (KT) No.6293-1/3
SBE802
Electrical Connection
5
4
3
trr Test Circuit
Duty≤10%
100mA
10mA
1
2
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
5V
100mA
10µs
50Ω
100Ω
10Ω
trr
1.0
7
5
3
2
IF -- VF
7
5
3
2
0.01
7
5
3
2
10
0
°
C
0.1
°
C
75
°
C
50
25
°
C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
IT01107
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
7
5
3
2
0.0001
0
10
20
30
IR -- VR
Reverse Current, IR -- mA
Forward Current, IF -- A
Ta=125
°
C
100
°C
75
°C
25
°
C
Ta=
1
50
°C
25
°C
40
50
60
70
80
90
100
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
0.1
0.2
0.3
0.4
Reverse Voltage, VR -- V
100
7
IT01108
PF(AV) -- IO
C -- VR
f=1MHz
Interterminal Capacitance, C -- pF
0.7
qRectangular
wave
θ=60°
wRectangular
wave
θ=120°
eRectangular
wave
θ=180°
rSine
wave
θ=180°
wr
q
5
3
2
e
10
7
5
3
2
Rectangular wave
θ
360°
Sine wave
180°
360°
0.5
0.6
1.0
1.0
2
3
5
7
10
2
3
5
7
100
Average Forward Current, IO -- A
7
IT01109
Reverse Voltage, VR -- V
IT01110
IS -- t
Current waveform 50Hz sine wave
Is
20ms
t
Surge Forward Current, IFSM(Peak) -- A
6
5
4
3
2
1
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
IT01111
No.6293-2/3
SBE802
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
PS No.6293-3/3
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