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SBFP420M

产品描述UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
产品类别分立半导体    晶体管   
文件大小44KB,共2页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
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SBFP420M概述

UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications

SBFP420M规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称SANYO
包装说明SMALL OUTLINE, R-PDSO-F4
针数4
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性LOW NOISE
最大集电极电流 (IC)0.035 A
基于收集器的最大容量0.3 pF
集电极-发射极最大电压4.5 V
配置SINGLE
最小直流电流增益 (hFE)50
最高频带C BAND
JESD-30 代码R-PDSO-F4
JESD-609代码e0
元件数量1
端子数量4
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)0.16 W
认证状态Not Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)25000 MHz

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Ordering number : 0000000
SBFP420M
NPN Epitaxial Planar Silicon Transistor
SBFP420M
UHF to C Band Low-Noise
Amplifier Low Phase Noise Osc.Applications
Preliminary
Features
Package Dimensions
unit : mm
0000
[SBFP420M]
0.25
Low noise : NF=1.1dB typ (f=1.8GHz).
High cut-off frequency : fT=18GHz typ (VCE=1V).
: fT=25GHz typ (VCE=3V).
Low operating voltage.
High gain :
S21e
2
=17dB typ (f=1.8GHz).
0.3
4
3
0.15
1.6
1
1.3
2.0
2
0.25
2.1
0.85
1:Collector
2:Emitter
3:Base
4:Emitter
SANYO:MCPH4
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
15
4.5
1.5
35
160
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Marking:MB
Symbol
ICBO
IEBO
hFE
fT(1)
fT(2)
Cre
S21e
2
(1)
S21e
2
(2)
NF
VCB=5V, IE=0
VEB=1.5V, IC=0
VCE=4V, IC=20mA
VCE=1V, IC=10mA
VCE=3V, IC=30mA
VCB=2V, f=1MHz
VCE=2V, IC=5mA, f=1.8GHz
VCE=2V, IC=20mA, f=1.8GHz
VCE=2V, IC=5mA, f=1.8GHz
50
13
18
12
14
18
25
0.15
15
17
1.1
0.3
Conditions
Ratings
min
typ
max
200
35
150
GHz
GHz
pF
dB
dB
dB
Unit
nA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
HD Seigi 010521 matumiya-1/2
0.15
Specifications

 
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