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GBU15L05_16

产品描述3.7 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小209KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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GBU15L05_16概述

3.7 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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GBU15L05~GBU15L06
Taiwan Semiconductor
CREAT BY ART
15A, 600V - 800V
Low VF, Low Noise Single-Phase Single In-Line Bridge Rectifiers
FEATURES
- Low forward drop enhance the efficiency
- Oxide planar chip junction
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
GBU
MECHANICAL DATA
Case:
GBU
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Polarity:
As marked
Weight:
4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current,
8.3 ms single half sine-wave
Peak forward surge current,
1.0 ms single half sine-wave
Rating of fusing ( t<8.3ms)
Maximum Instantaneous Forward Voltage
I
F
= 7.5 A
(Note 1)
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
I
R
R
θJC
R
θJA
T
J
T
STG
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
FSM
I
2
t
TYP
V
F
0.87
0.75
MAX
0.90
-
5
150
3
15
- 55 to +150
- 55 to +150
GBU15L05
600
420
600
15
200
630
166
TYP
0.93
-
MAX
0.96
-
μA
°C/W
°C
°C
V
GBU15L06
800
560
800
UNIT
V
V
V
A
A
A
A
2
s
Document Number: DS_D0000071
Version: B15

GBU15L05_16相似产品对比

GBU15L05_16 GBU15L06
描述 3.7 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.7 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

 
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