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SBR860

产品描述8 A, 60 V, SILICON, RECTIFIER DIODE, TO-220
产品类别半导体    分立半导体   
文件大小137KB,共2页
制造商DAESAN
官网地址http://www.diodelink.com
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SBR860概述

8 A, 60 V, SILICON, RECTIFIER DIODE, TO-220

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SBR820 THRU SBR8100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
CURRENT 8.0Amperes
VOLTAGE 20 to 100 Volts
TO-220A
.412
(10.5)
MAX.
.180
3.8 f +.2
HOLE THRU (4.6)
.248
(6.3) .595
(15.1)
MAX.
.550
.158 (14.0)
(4.0) MIN.
MAX.
.200
(5.08)
+
.108
(2.75)
.040
(1.0)
MAX.
.051 MAX.
(1.3)
.040 MAX.
(1.0)
.050
(1.27)
Mechanical Data
· Case : JEDEC TO-220A molded plastic body
· Terminals: Lead solderable per
MIL-STD-750, Method 2026
· Polarity: As marked
· Mounting Position: Any
· Weight: 0.08ounce, 2.24 grams
PIN 1
+
CASE
PIN 2
Case Positive
+
CASE
PIN 2
Case Negative
Suffix "R"
PIN 1
.120
(3.05)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=125℃
V
RRM
V
RMS
V
DC
I(
AV
)
I
FRM
I
FSM
SBR
820
20
14
20
SBR
830
30
21
30
SBR
840
40
28
40
SBR
850
50
35
50
8.0
16.0
150.0
SBR
860
60
42
60
SBR
880
80
56
80
SBR
8100
100
70
100
Units
Volts
Volts
Volts
Amps
Amps
Amps
V
F
I
R
JC
T
J
T
STG
0.65
1.0
15
2.5
-65 to +125
0.75
0.80
0.85
Volts
mA
℃/W
50
-65 to +150
-65 to +150
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case

SBR860相似产品对比

SBR860 SBR820 SBR830 SBR840 SBR850 SBR880 SBR8100
描述 8 A, 60 V, SILICON, RECTIFIER DIODE, TO-220 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220

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