Switching Diodes
MA3J142D
(MA142WA)
, MA3J142E
(MA142WK)
Silicon epitaxial planar type
0.3
+0.1
–0
Unit: mm
0.15
+0.1
–0.05
For switching circuits
■
Features
•
Two isolated elements contained in one package, allowing high-
density mounting
3
1.25
±0.1
2.1
±0.1
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
5˚
0.9
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Single
Double
Peak forward
current
Non-repetitive peak
forward surge current
*
Junction temperature
Storage temperature
Note) *: t
=
1 s
Single
Double
Single
Double
T
j
T
stg
I
FSM
I
FM
Symbol
V
R
V
RM
I
F
Rating
80
80
100
150
225
340
500
750
150
−55
to
+150
°C
°C
mA
mA
Unit
V
V
mA
0 to 0.1
EIAJ: SC-79
SMini3-F1 Package
MA3J142D MA3J142E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode
Cathode
Marking Symbol:
•
MA3J142D: MO
•
MA3J142E: MU
Internal Connection
3
3
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
MA3J142D
MA3J142E
Reverse recovery time
*
MA3J142D
MA3J142E
t
rr
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Ω
Symbol
V
F
V
R
I
R
C
t
I
R
=
100
µA
V
R
=
75 V
V
R
=
0 V, f
=
1 MHz
Conditions
I
F
=
100 mA
D
2
1
E
Min
Typ
Max
1.2
(0.15)
2
(0.425)
5˚
Unit
V
V
80
100
15
2
10
3
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Publication date: March 2004
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part numbers in the parenthesis show conventional part number.
SKF00018BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP