BF1207
Dual N-channel dual gate MOSFET
Rev. 01 — 28 July 2005
Product data sheet
1. Product profile
1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
s
Internal switch to save external components
s
Superior cross-modulation performance during AGC
s
High forward transfer admittance
s
High forward transfer admittance to input capacitance ratio
1.3 Applications
s
Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1:
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
V
DS
I
D
P
tot
y
fs
drain-source voltage
drain current
total power dissipation
forward transfer admittance
Conditions
DC
DC
T
sp
≤
107
°C
f = 1 MHz
amplifier A; I
D
= 18 mA
amplifier B; I
D
= 14 mA
C
iss(G1)
input capacitance at gate1
f = 100 MHz
amplifier A
amplifier B
C
rss
NF
Xmod
reverse transfer capacitance f = 100 MHz
noise figure
cross-modulation
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
T
j
[1]
[1]
Min
-
-
-
25
26
-
-
-
-
-
Typ
-
-
-
30
31
2.2
1.9
20
1.3
1.4
Max Unit
6
30
180
40
41
2.7
2.4
-
-
-
V
mA
mW
mS
mS
pF
pF
fF
dB
dB
100
100
-
105
103
-
-
-
150
dBµV
dBµV
°C
junction temperature
T
sp
is the temperature at the soldering point of the source lead.
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Discrete pinning
Description
drain (AMP A)
source
drain (AMP B)
gate1 (AMP B)
gate2
gate1 (AMP A)
G1A
AMP A
sym108
Simplified outline
6
5
4
Symbol
AMP B
G1B
DB
1
2
3
G2
S
DA
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
2 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
3. Ordering information
Table 3:
Ordering information
Package
Name
BF1207
-
Description
plastic surface mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4:
BF1207
[1]
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Marking
Marking code
[1]
M2*
Type number
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
[1]
Parameter
drain-source voltage
drain current
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
Conditions
DC
DC
Min
-
-
-
-
Max
6
30
±10
±10
180
+150
150
Unit
V
mA
mA
mA
mW
°C
°C
Per MOSFET
T
sp
≤
107
°C
[1]
-
−65
-
T
sp
is the temperature at the soldering point of the source lead.
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
3 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
250
P
tot
(mW)
200
001aac741
150
100
50
0
0
50
100
150
T
sp
(°C)
200
Fig 1. Power derating curve
6. Thermal characteristics
Table 6:
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
240
Unit
K/W
7. Static characteristics
Table 7:
Static characteristics
T
j
= 25
°
C.
Symbol
V
(BR)DSS
Parameter
drain-source breakdown voltage
Conditions
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
µA
amplifier A
amplifier B
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
V
GS
= V
DS
= 0 V; I
G1-S
= 10 mA
V
GS
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
µA
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
µA
V
G2-S
= 4 V; V
DS
= 5 V; R
G1
= 68 kΩ
amplifier A
amplifier B
[1]
[2]
Min
Typ
Max Unit
Per MOSFET; unless otherwise specified
6
6
6
6
0.5
0.5
0.3
0.4
13
9
-
-
-
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
23
19
V
V
V
V
V
V
V
V
mA
mA
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
4 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
Table 7:
Static characteristics
…continued
T
j
= 25
°
C.
Symbol
I
G1-S
Parameter
gate1 cut-off current
Conditions
V
G2-S
= V
DS(A)
= 0 V
amplifier A; V
G1-S(A)
= 5 V; V
DS(B)
= 0 V
amplifier B; V
G1-S(A)
= 0 V; I
D(B)
= 0 A
I
G2-S
[1]
[2]
Min
-
-
-
Typ
-
-
-
Max Unit
50
50
20
nA
nA
nA
gate2 cut-off current
V
G2-S
= 4 V; V
G1-S
= V
DS(A)
= V
DS(B)
= 0 V;
R
G1
connects gate1 (A) to V
GG
= 5 V (see
Figure 3).
R
G1
connects gate1 (B) to V
GG
= 0 V (see
Figure 3).
20
I
D
(mA)
16
001aac742
(1)
G1B
(2)
DB
12
(3)
G2
S
8
(4)
G1A
R
G1
V
GG
(6)
(5)
DA
4
001aac881
0
0
1
2
3
4
V
GG
(V)
5
(1) I
D(A)
; R
G1
= 47 kΩ.
(2) I
D(A)
; R
G1
= 68 kΩ.
(3) I
D(A)
; R
G1
= 100 kΩ.
(4) I
D(B)
; R
G1
= 100 kΩ.
(5) I
D(B)
; R
G1
= 68 kΩ.
(6) I
D(B)
; R
G1
= 47 kΩ.
V
DS(A)
= V
DS(B)
= 5 V; V
G2-S
= 4 V; T
j
= 25
°C.
V
GG
= 5 V: amplifier A is on; amplifier B is off.
V
GG
= 0 V: amplifier A is off; amplifier B is on.
Fig 2. Drain currents of MOSFET A and B as function
of V
GG
Fig 3. Functional diagram
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
5 of 22
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