6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
6 A, 800 V, 硅, 桥式整流二极管
参数名称 | 属性值 |
Package | GBU |
Maximum recurrent peak reverse voltage | 600 |
Maximum average forward rectified curre | 3 |
Peak forward surge curre | 135 |
Maximum instantaneous forward voltage | 1 |
Maximum reverse curre | 5 |
TJ(℃) | -55~+150 |
GBU606 | GBU601 | GBU602 | GBU603 | GBU604 | GBU605 | GBU607 | |
---|---|---|---|---|---|---|---|
描述 | 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 2.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
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