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1N4933G

产品描述SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小168KB,共2页
制造商Good-Ark
官网地址http://www.goodark.com/
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1N4933G概述

SIGNAL DIODE

信号二极管

1N4933G规格参数

参数名称属性值
状态ACTIVE
二极管类型信号二极管

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1N4933G THRU 1N4937G
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage -
50 to 600 Volts
Forward Current -
1.0 Ampere
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High temperature metallurgically bonded construction
Capable of meeting environmental standards of
MIL-S-19500
For use in high frequency rectifier circuits
Fast switching for high efficiency
Glass passivated cavity-free junction
1.0 ampere operation at T
A
=75 with no thermal runaway
Typical I
R
less than 0.1 A
High temperature soldering guaranteed:
350 /10 seconds, 0.375” (9.5mm) lead length,
5 lbs. (2.3Kg) tension.
Mechanical Data
Case:
DO-41 molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.335 gram
DIM
A
B
C
D
inches
Min.
0.165
0.079
0.028
1.000
DIMENSIONS
mm
Max.
0.205
0.106
0.034
-
Min.
4.2
2.0
0.71
25.40
Max.
5.2
2.7
0.86
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
1N
4933G
1N
4934G
1N
4935G
1N
4936G
1N
4937G
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=75
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=125
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
JA
50
35
50
100
70
100
200
140
200
1.0
30.0
1.20
5.0
100.0
200.0
15.0
55.0
-65 to +175
400
280
400
600
420
600
Volts
Volts
Volts
Amp
Amps
Volts
A
nS
F
/W
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
T
J
, T
STG
Notes:
(1) Reverse recovery test conditions: I
F
=1.0A, V
R
=30 volts
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
1

1N4933G相似产品对比

1N4933G 1N4934G 1N4935G 1N4936G 1N4937G
描述 SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE

 
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