R
SR20100LCT
LOW V
F
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 100 Volts
Forward Current - 20Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
Dual rectifier construction
High temperature soldering guaranteed:260
°
C/10 seconds,,
0.25"(6.35mm)from case
Component in accordance to RoHS 2002
/
95
/
EC and
WEEE 2002
/
96
/
EC
JF
SR860CT
TO-220AB
（
B TYPE)
0.184(4.68)
0.403(10.25)
0.384(9.75)
0.148(3.75)
0.136(3.45)
DIA
0.114(2.90)
0.102(2.60)
0.283(7.20)
0.244(6.20)
0.168(4.28)
0.055(1.39)
0.045(1.14)
1
0.159(3.20)
0.094(2.40)
PIN
2
0.065(1.65)
3
0.053(1.35)
DIA
1.161(29.5)
1.106(28.1)
0.531(13.50)
0.106(2.70)
0.090(2.30)
0.492(12.50)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.053(1.34)
0.047(1.20)
MECHANICAL DATA
Case
:
JEDEC TO-220AB molded plastic body
Terminals
:
Lead solderable per MIL-STD-750,method 2026
Polarity
:
As marked
Mounting Position:
Any
Weight
:
0.08ounce, 2.24 grams
0.025(0.63)
0.015(0.37)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Per leg
Total device
SR
20100LCT
100
70
100
10.0
20.0
150
2.8
10000
-65 to+150
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
R
JC
dV/dt
V
olts
V
olts
V
olts
A
mps
A
mps
℃/W
v/μs
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Typical thermal resistance per diode
Voltage rate of change
Operating junction and storage
temperature range
T
J,
T
STG
TEST CONDITIONS
SYMBOLS
℃
MAX.
-
0.73
-
0.68
-
-
500
25
μA
UNITS
PARAMETER
TYP
.
0.55
I
F
=5A
Instantaneous forward voltage per diode
T
A
T
A
T
A
T
A
T
A
T
A
I
F
=10A
I
F
=5A
I
F
=10A
V
R
=70V
=25
℃
V
F (NOTE 1)
=125
℃
0.68
0.50
0.58
V
olts
=25
℃
=125
℃
=25
℃
=125
℃
17
Reverse current per diode
I
R
(NOTE 2)
5.3
-
12
mA
μA
V
R
=100V
mA
Notes:
1.Pulse test: 300
s pulse width,1% duty cycle
2.Pulse
test: Pulse width
≤
40ms
JINAN JINGHENG ELECTRONICS CO., LTD.
2-1
HTTP
://
WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES SR20100LCT
24
Resistive or Inductive Load
100
Instantaneous Reverse Current (mA)
Average Forward Current (A)
20
T
A
= 150 °C
10
T
A
= 125 °C
1
16
12
0.1
T
A
= 25 °C
8
4
0.01
0
0
25
50
75
100
125
150
175
0.001
10
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
D = 0.5
D = 0.3
D = 0.2
14
12
10
8
6
4
2
0
0
4
8
12
16
20
24
D = t
p
/T
t
p
T
D = 0.1
D = 1.0
D = 0.8
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
Average Power Loss (W)
16
Junction Capacitance (pF)
100
10
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
T
A
= 150 °C
Junction to Case
T
A
= 125 °C
10
T
A
= 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
JINAN JINGHENG ELECTRONICS CO., LTD.
2-2
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://
WWW.JINGHENGGROUP.COM
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