HS-
TM
Data Sheet
November 2001
File Num
Radiation Hardened
CMOS Dual SPDT Analog Switch
The HS-303RH analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). This switch offers low-
resistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and stays reasonably
constant over the full range of operating voltage and current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30
Ω
pre-rad and 35
Ω
post 100kRAD(Si). Break-before-make switching is
controlled by 5V digital inputs.
Features
• QML, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (
γ
) 1 x 10
5
RAD(Si)
• No Latch-Up, Dielectrically Isolated Device
• Pin for Pin Compatible with Intersil HI-303 S
Switches
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (M
• Low r
ON
. . . . . . . . . . . . . . . . . . . . . . 60
Ω
(M
• Low Operating Power . . . . . . . . . . 100
µ
A (M
Pinouts
HS1-303RH (SBDIP), CDIP2-T14
TOP VIEW
NC
S3
1
2
3
4
5
6
7
14 V+
13 S4
12 D4
11 D2
10 S2
9 IN2
8 V-
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-303RH are
contained in SMD 5962-95813. A “hot-link” is provided from
our website for downloading
D3
D1
S1
IN1
Ordering Information
ORDERING
NUMBER
5962R9581301QCC
5962R9581301QXC
5962R9581301VCC
5962R9581301VXC
HS1-303RH/PROTO
HS9-303RH/PROTO
PART
NUMBER
HS1-303RH-8
HS9-303RH-8
HS1-303RH-Q
HS9-303RH-Q
HS1-303RH/PROTO
HS9-303RH/PROTO
TEMP.
RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
NC
S3
D3
D1
S1
IN1
GND
GND
HS9-303RH (FLATPACK) CDFP3-F1
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC H
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of
Copyright © Intersil Americas Inc. 2001
HS-303RH
Functional Diagram
SBDIP TRUTH TABLE
IN
N
P
D
LOGIC
0
1
SW1AND SW2
OFF
ON
SW3 AN
ON
OF
Die Characteristics
DIE DIMENSIONS:
(2130
µ
m x 1930
µ
m x 279
µ
m
±
25.4
µ
m)
84 x 76 x 11mils
±
1mil
METALLIZATION:
Type: Al
Thickness: 12.5k
Å
±
2k
Å
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Gold
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 8k
Å
±
1k
Å
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
76
PROCESS:
Metal Gate CMOS, Dielectric Isolation
Metallization Mask Layout
HS-303RH-T
S3
V+
S4
D3
D4
D1
D2
S1
S2
IN1
IN2
NC
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third partie
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
2
GND
V-
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