MUR820H thru MUR860H
Pb
®
Pb Free Plating Product
MUR820H thru MUR860H
8.0 Ampere Ultra Fast Rectifiers for Power Chargers
Features
¬
Fast switching for high efficiency
¬
Low forward voltage drop
¬
High current capability
¬
Low reverse leakage current
¬
High surge current capability
Mechanical Data
¬
Case: Molded TO-220AC
¬
Epoxy: UL 94V-0 rate flame retardant
¬
Terminals: Solderable per MIL-STD-202
method 208
¬
Polarity:Color band denotes cathode
¬
Mounting position: Any
¬
Weight: 2.03 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
TO-220AC
Unit : inch (mm)
2
MUR820H
200
140
200
MUR840H
400
280
400
8.0
MUR860H
720
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
125
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
10.0
250
35
65
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
MUR820H thru MUR860H
®
FIG.1 - FORWARD CURRENT DERATING CURVE
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
50
100
o
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
125
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
100
75
50
25
60 Hz Resistive or
Inductive load
150
0
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
80
MUR820H
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
o
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
MUR840H
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
T
J
=125 C
o
8
MUR860H
10
T
J
=25 C
1
o
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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