MUR60120
MUR60120
Pb Free Plating Product
60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
®
Pb
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
TO-247-2L
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
MUR60120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
P
D
T
J
T
STG
Torque
R
θJC
Weight
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
T
C
=110°C
T
C
=110°C
T
C
=25°C unless otherwise specified
Test Conditions
Values
1200
1200
60
84
500
312
-40 to +150
-40 to +150
Recommended（M3）
Junction-to-Case
1.1
0.4
6.0
Unit
V
V
A
A
A
W
°C
°C
N·m
°C /W
g
T
J
=45°C, t=10ms, 50Hz, Sine
ELECTRICAL CHARACTERISTICS
Symbol
I
RM
Parameter
Reverse Leakage Current
Test Conditions
V
R
=1200V
V
R
=1200V, T
J
=125°C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Time
Max. Reverse Recovery Current
I
F
=60A
I
F
=60A, T
J
=125°C
T
C
=25°C unless otherwise specified
Min.
--
--
--
--
--
--
--
--
--
Typ.
--
--
2.10
1.75
40
90
7.5
320
14
--
--
--
--
--
Max.
500
5
--
Unit
µA
mA
V
V
ns
ns
A
ns
A
V
F
t
rr
t
rr
I
RRM
t
rr
I
RRM
I
F
=1A, V
R
=30V, di
F
/dt=-200A/μs
V
R
=600V, I
F
=60A
di
F
/dt=-200A/μs, T
J
=25°C
V
R
=600V, I
F
=60A
di
F
/dt=-200A/μs, T
J
=125°C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
MUR60120
®
120
100
80
60
40
T
J
=25°C
T
J
=125°C
500
V
R
=600V
T
J
=125°C
400
t
rr
(ns)
I
F
(A)
300
I
F
=120A
I
F
=60A
I
F
=30A
200
20
0
0
100
1.5
2.0
3.0
2.5
V
F
（V）
Figure1. Forward Voltage Drop vs Forward Current
0.5
1.0
0
0
1000
400
600
800
di
F
/dt（A/μs）
Figure2. Reverse Recovery Time vs di
F
/dt
200
100
V
R
=600V
T
J
=125°C
10
V
R
=600V
T
J
=125°C
80
8
I
RRM
(A)
Q
rr
(μc)
60
6
I
F
=120A
I
F
=60A
I
F
=30A
40
I
F
=120A
I
F
=60A
4
20
I
F
=30A
2
0
0
400
600
1000
800
di
F
/dt（A/μs）
Figure3. Reverse Recovery Current vs di
F
/dt
200
0
400
600
800
1000
di
F
/dt（A/μs）
Figure4. Reverse Recovery Charge vs di
F
/dt
0
200
1.4
1.2
1.0
0.8
K
f
0.6
I
RRM
1
10
Z
thJC
(K/W)
-1
10
-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
0.4
t
rr
10
-3
0.2
0
Q
rr
100 125 150
75
T
J
(°C)
Figure5. Dynamic Parameters vs Junction Temperature
0
25
50
10
-4
10
-4
10
10
10
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
-3
-2
-1
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/
MUR60120
®
I
F
t
rr
I
RRM
Q
rr
0.25 I
RRM
dI
F
/dt
0.9 I
RRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters
Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3
http://www.thinkisemi.com/
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