of linear gain, 2 W saturated output power and 24%
efficiency while biased at 6 V.
The MAAP-011246 can be used as a power
amplifier stage or as a driver stage in higher power
applications. This device is ideally suited for VSAT
and 28 GHz PTP applications.
This product is fabricated using a GaAs pHEMT
process which features full passivation for enhanced
reliability.
10
V
G
11
V
G
12
N/C
13
N/C
14
N/C
15
V
D
4
16
GND
Pin Configuration
3
Pin No.
1
2
3
4
5-7
Function
Ground
No Connection
Ground
RF Input
No Connection
Ground
Gate Voltage
Gate Voltage
No Connection
Drain Voltage 4
Ground
No Connection
Pin No.
20
21
22
23
24, 25
26
27, 28
29
30
31
32
Paddle
4
Function
Ground
RF Output
Ground
No Connection
Ground
Drain Voltage 4
Drain Voltage 3
Drain Voltage 2
No Connection
Drain Voltage 1
Ground
Ground
Ordering Information
Part Number
MAAP-011246-TR0500
MAAP-011246-1SMB
1,2
8, 9
Package
500 Piece Reel
Sample Board
10
11
12 - 14
15
16, 17
18, 19
1. Reference Application Note M513 for reel size information.
2. All sample boards include 3 loose parts.
*
Restrictions on Hazardous Substances,
European Union Directive 2011/65/EU.
3. MACOM recommends connecting all No Connection (N/C)
pins to ground.
4. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011246
Power Amplifier, 2 W
27.5 - 31.5 GHz
Electrical Specifications: Freq. = 30 GHz, T
A
= +25°C, V
D
= 6 V, Z
0
= 50 Ω
Parameter
Gain
P
OUT
IM3 Level
Power Added Efficiency
Input Return Loss
Output Return Loss
Quiescent Current
Current
Test Conditions
P
IN
= 0 dBm
P
IN
= 15 dBm
P
OUT
= 27 dBm / tone
P
SAT
(P
IN
= 15 dBm)
P
IN
= -20 dBm
P
IN
= -20 dBm
I
DQ
(see bias conditions, page 4 )
P
SAT
(P
IN
= 15 dBm)
Units
dB
dBm
dBc
%
dB
dB
mA
mA
Min.
19
31.5
—
—
—
—
—
—
Typ.
22
33
-22
24
10
14
900
1450
Max.
—
—
—
—
—
—
—
—
Rev. V1
Maximum Operating Ratings
Parameter
Input Power
Junction Temperature
5,6
Operating Temperature
Rating
15 dBm
+160°C
-40°C to +85°C
Absolute Maximum Ratings
7,8
Parameter
Input Power
Drain Voltage
Gate Voltage
Junction Temperature
9
Storage Temperature
Absolute Maximum
20 dBm
+6.5 V
-3 to 0 V
+175°C
-65°C to +125°C
5. Operating at nominal conditions with junction temperature
≤ +160°C will ensure MTTF > 1 x 10
6
hours.
6. Junction Temperature (T
J
) = T
C
+
Ө
JC
* ((V * I) - (P
out
- P
IN
))
Typical thermal resistance (Ө
JC
) = 8°C/W.
a) For T
C
= +25°C,
T
J
= +79°C @ 6 V, 1.45 A, P
OUT
= 33.0 dBm, P
IN
= 15 dBm
b) For T
C
= +85°C,
T
J
= +136°C @ 6 V, 1.34 A, P
OUT
= 32.4 dBm, P
IN
= 15 dBm
Handling Procedures
Please observe the following precautions to avoid
damage:
7. Exceeding any one or combination of these limits may cause
permanent damage to this device.
8. MACOM does not recommend sustained operation near these
survivability limits.
9.
Junction temperature directly effects device MTTF. Junction
temperature should be kept as low as possible to maximize
lifetime.
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM Class
1A devices.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011246
Power Amplifier, 2 W
27.5 - 31.5 GHz
Sample Board Layout
C11
Rev. V1
GND
GND
Vd1
C7
L1
R1
C1
L2
C2 R2
C4
C3
L3
R3
R4
C8
Vd2
C12
RF IN
MAAP-011246
R6
C10
C5
R5
C6
RF OUT
C9
Vg
Vd2
GND
GND
C13
Application Schematic
Vd1
Vd2
Parts List
Part
C8
C12
Value
0.01 µF
1 µF
10 µF
10
Ω
600
Ω @ 100
MHz
Case Style
0402
0603
0805
0402
0603
C11
C7
C1 - C6
C7 - C10
C11 - C13
R1 - R6
L1
R1
C1
L2
R2
C2
L3
R3
C3
Note:
Vd2 must be biased
from both sides.
Vd1
R4
C4
Vd2
Vd3
Vd4
RF
IN
RF O
L1 - L3
10
Vg
Vd4
10. L1 - L3 (chip ferrite bead) supplied from Murata, part number
BLM18HE601SN1D.
R6
C6
R5
C5
Sample Board Material Specifications
C13
C9
C10
Top Layer:
1/2 oz Copper Cladding, 0.017 mm thickness
Dielectric Layer:
Rogers RO4003C 0.203 mm thickness
Bottom Layer:
1/2 oz Copper Cladding, 0.017 mm thickness
Finished overall thickness:
0.238 mm
Vg
Vd2
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011246
Power Amplifier, 2 W
27.5 - 31.5 GHz
Recommended PCB Layout Detail:
RF input and output pre-matching circuit patterns are designed to compensate packaging effects.
Transmission line dimensions apply to a PCB with 0.203 mm thick Rogers RO4003C laminate dielectric.
Performance curves shown in this data sheet were measured with these circuit patterns
Plated Through Hole D=0.2
1685
1810
Rev. V1
200
810
430
250
810
430
595
430
225
185
500
All units are in microns
500
225
185
Underneath of the package must be
Copper filled plated through holes.
D = 0.2 mm and Space = 0.43 mm
Total Via-holes = 8 x 8
Biasing Conditions
Recommended biasing conditions are V
D
= 6 V,
I
DQ
= 900 mA (controlled with V
G
). The drain bias
voltage range is 3 to 6 V, and the quiescent drain
current biasing range is 600 to 1200 mA.
V
G
pins 10 and 11 are connected internally; choose
either pin for layout convenience. Muting can be
accomplished by setting the V
G
to the pinched off
voltage (V
G
= -2 V).
V
D
bias must be applied to V
D
1, V
D
2, V
D
3, and V
D
4
pins. V
D
3 pins 27 and 28 are connected internally:
choose either pin for layout convenience. Two V
D
4
pins 15 and 26 (not connected internally) are
required for current symmetry.
Operating the MAAP-011246
Turn-on
1. Apply V
G
(-1.5 V).
2. Apply V
D
(6.0 V typical).
3. Set I
DQ
by adjusting V
G
more positive
(typically -0.9 to -1.0 V for I
DQ
= 900 mA).
4. Apply RF
IN
signal.
Turn-off
1. Remove RF
IN
signal.
2. Decrease V
G
to -1.5 V.
3. Decrease V
D
to 0 V.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011246
Power Amplifier, 2 W
27.5 - 31.5 GHz
Typical Performance Curves
Gain vs. Frequency over Temperature
40
Rev. V1
Gain vs. Frequency over Bias Voltage
40
30
30
Gain (dB)
20
Gain (dB)
+25°C
-40°C
+85°C
20
10
10
5.5 V
6.0 V
6.5 V
0
27
28
29
30
31
32
0
27
28
29
30
31
32
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Frequency over Temperature
0
+25°C
-40°C
+85°C
Input Return Loss vs. Frequency over Bias Voltage
0
5.5 V
6.0 V
6.5 V
-10
-10
S11 (dB)
-20
S11 (dB)
-20
-30
27
28
29
30
31
32
-30
27
28
29
30
31
32
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency over Temperature
0
+25°C
-40°C
+85°C
Output Return Loss vs. Frequency over Bias Voltage
0
5.5 V
6.0 V
6.5 V
-10
-10
S22 (dB)
S22 (dB)
-20
-20
-30
-30
27
27
28
29
30
31
32
28
29
30
31
32
5
Frequency (GHz)
Frequency (GHz)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
主题：自备终端(BYOD)发展趋势;用员工自己的移动设备来控制对工作设施及设备的使用，会对信息安全产生怎样的影响;在不使公司有安全风险或不损害员工隐私的前提下，有哪些方式能安全地实现这样的设施及设备使用。 自备终端(Bring Your Own Device，简称BYOD)，即企业允许员工离职时保留自己的手机，这种做法正日益流行。如今智能手机功能也越来越多，我们不仅能用自己的手机访问电脑、网...[详细]
与云数据库相比，小型计算机是专门为网络边缘的去中心化坚固计算而构建的。通过将应用程序、分析和处理服务移动到更靠近数据生成源的位置，业务运营可以获得改进的实时计算应用程序性能。 l 从奔腾到酷睿i5的可扩展CPU性能 l 智能电源点火管理和CAN总线网络支持 l 无线局域网和广域网LTE连接 l 丰富的I/O可扩展性，包括PoE、PCI、PCIe、COM l 适用于宽工作温度和宽电压输入的坚固...[详细]
1. 内容简介 在2015年，苹果新一代的MacBook和Apple Watch皆搭载压力触控感应技术，它被Apple称为Force Touch，用户每次按下触控板之后除了可以在萤幕看见视觉回馈，它同时能够分辨出用户点按的力度强弱来做出一系列的相关操控与应用。而本文将介绍以HY16F184内建高精密Sigma-delta 24 Bit ADC搭配Uneo Force Sensor来实现一...[详细]
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
