BYV26A thru BYV26G
®
Pb Free Plating Product
BYV26A thru BYV26G
1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS
SOD-57
Pb
Features
D
D
D
D
D
Glass passivated junction
Hermetically sealed package
Very low switching losses
Low reverse current
High reverse voltage
Unit: inch(mm)
Applications
Switched mode power supplies
High–frequency inverter circuits
94 9539
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@T
A
= 55
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Reverse Recovery Time (Note 1)
Maximum DC Reverse Current @ T
A
=25
C
o
at Rated DC Blocking Voltage @ T
A
=150
C
Maximum Instantaneous Forward Voltage
o
@ 1.0A @
T
A
=25
C
o
@ 1.0A @
T
A
=175
C
Maximum Reverse recovery Current Slope
dIr/dt @ IF=1A, VR=30V, dIf/dt = 1A / uS
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
o
Symbol BYV
26A
V
RRM
V
DC
I
(AV)
I
FSM
Trr
I
R
V
F
BYV
26B
BYV
26C
BYV
26D
BYV
26E
BYV
26G
Units
V
V
A
A
200V
300V
400V
500V
600V
700V
800V
900V
1.0
30
1000V 1400V
1100V 1500V
30
5.0
100
75
nS
uA
uA
2.5
1.3
7
45
40
-55 to +175
-55 to +175
V
A/uS
o
dv/dt
Cj
R
θ
JA
Operating Temperature Range
Storage Temperature Range
T
J
T
STG
pF
C
/W
o
C
o
C
Notes:
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on PCB.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
BYV26A thru BYV26G
®
Characteristics
(T
j
= 25
_
C unless otherwise specified)
P
R
– Maximum Reverse Power Dissipation ( mW )
600
R
thJA
=45K/W
V
R
=1000V
R
thJA
=100K/W
300
600V
200
100
0
0
40
80
120
160
200
95 9729
1000
I
R
– Reverse Current (
m
A )
500
400
100
800V
10
400V
200V
1
V
R
= V
R RM
0.1
0
40
80
120
160
200
95 9728
T
j
– Junction Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 2. Max. Reverse Current vs.
Junction Temperature
1.2
I
FAV
– Average Forward Current ( A )
I
F
– Forward Current ( A )
1.0
0.8
0.6
0.4
0.2
0
0
95 9730
10
T
j
= 175°C
R
thJA
=45K/W
L=10mm
1
0.1
T
j
= 25°C
R
thJA
=100K/W
PCB
0.01
0.001
40
80
120
160
200
95 9731
0
1
2
3
4
5
6
7
T
amb
– Ambient Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Max. Forward Current vs. Forward Voltage
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
stm32/stm8
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