SMD Schottky Barrier Diode
CDBFR40-HF
I
o
= 200 mA
V
R
= 40 Volts
RoHS Device
Halogen Free
Features
-Low forward Voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.051(1.30)
0.043(1.10)
1005/SOD-323F
0.102(2.60)
0.095(2.40)
Mechanical data
0.035(0.90)
-Case: 1005/SOD-323F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BC
-Mounting position: Any
-Weight: 0.006 gram(approx.).
0.040(1.00) Typ.
0.027(0.70)
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Peak reverse voltage
Reverse voltage
RMS reverse voltage
Average forward rectified current
Forward current,surge peak
Power dissipation
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RM
V
R
V
R(RMS)
I
O
40
40
28
200
0.6
200
-65
+125
+125
V
V
V
mA
A
mW
O
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
P
D
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
I
F
= 1mA
I
F
= 40mA
V
R
= 30V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
C
T
T
rr
0.38
1
0.2
5
5
V
uA
pF
nS
f = 1 MHz, and 0 VDC reverse voltage
I
F
=I
R
=10mA,Irr=0.1xIR,RL=100 ohm
REV:A
QW-G1015
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBFR40-HF)
Fig. 1 - Forward characteristics
1000
100u
Fig. 2 - Reverse characteristics
Reverse current ( A )
Forward current (mA )
10u
100
125 C
O
1u
75 C
O
10
100n
1
C
75 C
C
O
125
O
-25
25
O
C
10n
25 C
O
O
-25 C
O
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1n
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
4
120
Fig.4 - Current derating curve
Average forward current(%)
f=1MHz
O
T
A
=25 C
3
Mounting on glass epoxy PCBs
100
80
2
60
40
1
20
0
0
10
20
30
40
0
0
25
50
75
100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
REV:A
QW-G1015
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
Polarity
W
C
P
A
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.55 ± 0.10
0.061
±
0.004
B
2.65 ± 0.10
0.104
±
0.004
C
1.05 ± 0.10
0.041
±
0.004
d
1.55 ± 0.05
0.061
±
0.002
D
178 ± 1
7.008
±
0.04
D
1
60.0 MIN.
2.362 MIN.
D
2
13.0 ± 0.20
0.512
±
0.008
1005
(SOD-323F)
(mm)
(inch)
SYMBOL
E
1.75 ± 0.10
0.069
±
0.004
F
3.50 ± 0.05
0.138
±
0.002
P
4.00 ± 0.10
0.157
±
0.004
P
0
4.00 ± 0.10
0.157
±
0.004
P
1
2.00 ± 0.05
0.079
±
0.004
T
0.23 ± 0.05
0.009
±
0.002
W
8.00 ± 0.20
0.315
±
0.008
W
1
13.5 MAX.
0.531 MAX.
1005
(SOD-323F)
(mm)
(inch)
REV:A
QW-G1015
Page 3
Comchip Technology CO., LTD.
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