AH114
¼ W High Linearity InGaP HBT Amplifier
Product Features
•
60 – 2500 MHz
•
+24 dBm P1dB
•
+41 dBm Output IP3
•
19 dB Gain @ 900 MHz
•
14.5 dB Gain @ 1900 MHz
•
+5V Single Positive Supply
•
Lead-free / Green / RoHS-
compliant SOT-89 Package
Product Description
The AH114 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +41 dBm OIP3 and +24 dBm of compressed 1dB
power. It is housed in a lead-free/green/RoHS-compliant
SOT-89 SMT package. All devices are 100% RF and DC
tested.
The AH114 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
AH114 to maintain high linearity over temperature and
operate directly off a single +5V supply.
This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
•
Final stage amplifiers for Repeaters
•
Mobile Infrastructure
•
Defense / Homeland Security
Function
Input / Base
Output / Collector
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3
(2)
Operating Current Range
Device Voltage
@ -45 dBc ACPR
Typical Performance
(1)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
mA
V
Min
60
13.5
Typ
1900
14.5
10
14
+23
+41
+17
5.0
2140
14
+23
+40
150
+5
Max
2500
Parameters
+39.5
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dB
900
1900
2140
19
14.5
14
-14
-10
-25
-10
-14
-20
+24
+23
+23
+40
+41
+40
5.0
5.0
6.0
+5 V @ 150 mA
Typical
130
170
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9101
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Junction Temperature
Thermal Resistance, Rth
Rating
Junction Temperature for >10
6
hours MTTF
-65 to +150
°C
+15 dBm
+6 V
220 mA
+220
°C
149
°C
/ W
Ordering Information
Part No.
AH114-89G
Description
¼ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
Standard tape / reel size = 1000 pieces on a 7” reel
Operation of this device above any of these parameters may cause permanent
damage.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 5
February 2012
AH114
¼ W High Linearity InGaP HBT Amplifier
S-Parameters (Vcc = +5 V, Icc = 150 mA, T = 25
°C,
unmatched 50 ohm system)
30
25
0.2
Typical Device Data
S11
1.0
0.8
6
0.
2.
0
2.
0
DB(|S[2,1]|) *
DB(GMax) *
0.
4
6
0.
0.8
1.0
Gain / Maximum Stable Gain
S22
Swp Max
3.075GHz
0.
4
Swp Max
3.075GHz
0
3.
0
4.
5.0
10.0
0
3.
0
4.
5.0
10.0
Gain (dB)
10.0
1.0
2.0
3.0
4.0
5.0
2.0
0.2
3.0
0.4
0.2
0.6
0.4
0.6
0.8
5
0
0
0.5
1
1.5
Frequency (GHz)
2
2.5
3
.4
-0
.4
-0
.0
-2
-0.
6
-0.
6
.0
-2
Swp Min
0.05GHz
Swp Min
0.05GHz
-0.8
-0.8
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is
expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icc = 150 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-3.61
-3.31
-2.62
-2.62
-2.54
-2.39
-2.27
-2.21
-2.16
-2.05
-1.99
-1.84
-1.68
-1.46
-1.33
-1.20
-1.17
-169.14
-173.35
179.12
173.23
168.30
163.31
158.06
152.89
147.55
142.54
137.85
133.47
129.41
125.20
120.48
115.03
109.05
23.08
21.93
19.02
17.74
16.69
15.62
14.57
13.55
12.54
11.65
10.70
9.91
9.13
8.46
7.85
7.22
6.62
149.67
148.90
146.43
136.11
123.77
111.53
101.13
91.40
82.69
74.35
66.99
59.96
53.84
47.68
41.30
34.74
27.78
-1.0
-30.46
-29.57
-27.97
-27.96
-27.96
-27.96
-26.02
-26.02
-26.02
-26.02
-25.08
-24.44
-24.44
-24.44
-23.27
-23.10
-23.10
17.14
14.05
9.40
10.86
10.86
10.62
9.88
8.87
7.57
5.95
4.22
2.37
0.24
-2.39
-5.53
-9.13
-12.86
-7.74
-7.80
-6.40
-6.33
-6.09
-5.86
-5.68
-5.58
-5.37
-5.20
-5.20
-5.05
-5.01
-4.89
-4.88
-4.73
-4.66
-1.0
-128.38
-143.29
-169.43
-179.95
173.78
168.37
163.12
157.73
152.46
147.09
141.71
136.43
131.29
126.16
121.19
116.28
111.40
Device S-parameters are available for download off of the website at: http://tqs.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 5
February 2012
-4.
0
-5.
0
-3
.0
-4.
0
-5.
0
2
-0.
2
-0.
-10.0
-10.0
10
0.8
4.0
5.0
0
10.0
1.0
15
0
0.2
20
-3
.0
AH114
¼ W High Linearity InGaP HBT Amplifier
Typical RF Performance
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output IP3
(+11 dBm / tone, 1 MHz spacing)
900 MHz Application Circuit (AH114-89PCB900)
900 MHz
19 dB
-14 dB
-10 dB
+40 dBm
+24 dBm
5.0 dB
+5 V
150 mA
Vcc = +5 V
All passive components are of size 0603 unless otherwise noted.
CAP
ID=C3
C=100000 pF
size 1206
CAP
ID=C2
C=1000 pF
size 0805
CAP
ID=C1
C=56 pF
RES
ID=R1
R=2700 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C4
C=56 pF
RES
ID=L2
R=0 Ohm
DIODE1
ID=D1
5.6 V
IND
ID=L1
L=33 nH
CAP
ID=C5
C=56 pF
PORT
P=2
Z=50 Ohm
Output P1dB
Noise Figure
Supply Voltage
Supply Current
20
15
10
CAP
ID=C6
C=5.6 pF
SUBCKT
ID=U1
NET="AH114"
C6 should be placed at the silk screen
marker "F" on the WJ evaluation board.
The capacitor should be placed
14° @ 0.9GHz from pin 1.
CAP
ID=C9
C=1.0 pF
C9 should be placed at the silk screen
marker "8" on the WJ evaluation board.
The capacitor should be placed
19° @ 0.9GHz from pin 3.
Measured parameters were taken at 25
°C.
Application Circuit: 900 MHz
-40
ACPR (dBc)
IS-95, 9 Ch. Forward, 30 kHz Meas BW, ±885 kHz offset
freq = 0.9 GHz
ACPR IS-95A vs. Channel Power
Magnitude (dB)
5
0
-5
-10
-15
-20
0.7
DB(|S[1,1]|) *
DB(|S[2,1]|) *
DB(|S[2,2]|) *
-50
-60
-70
0.8
0.9
Frequency (GHz)
1
1.1
13
14
15
16
17
18
Output Channel Power (dBm)
1900 MHz Application Circuit (AH114-89PCB1900)
Typical RF Performance
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output IP3
(+11 dBm / tone, 1 MHz spacing)
Vcc = +5 V
All passive components are of size 0603 unless otherwise noted.
1900 MHz
14.5 dB
-10 dB
-14 dB
+41 dBm
+23 dBm
5.0 dB
+5 V
150 mA
RES
ID=R1
R=2700 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C4
C=56 pF
IND
ID=L2
L=2.7 nH
DIODE1
ID=D1
5.6 V
IND
ID=L1
L=15 nH
CAP
ID=C3
C=100000 pF
size 1206
CAP
ID=C2
C=1000 pF
size 0805
CAP
ID=C1
C=56 pF
CAP
ID=C5
C=56 pF
PORT
P=2
Z=50 Ohm
Output P1dB
Noise Figure
Supply Voltage
Supply Current
CAP
ID=C7
C=2.4 pF
C7 should be placed at the silk screen
marker "A" on the WJ evaluation board.
The capacitor should be placed
5° @ 1.9GHz from pin 1.
SUBCKT
ID=U1
NET="AH114"
CAP
ID=C9
C=1.2 pF
C9 should be placed at the silk screen
marker "7" on the WJ evaluation board.
The capacitor should be placed
34° @ 1.9GHz from pin 3.
Measured parameters were taken at 25
°C.
20
15
Application Circuit: 1900 MHz
-40
ACPR (dBc)
IS-95, 9 Ch. Forward, 30 kHz Meas BW, ±885 kHz offset
freq = 1.9 GHz
ACPR IS-95A vs. Channel Power
10
Magnitude (dB)
5
0
-5
-10
-15
-20
1.6
-50
DB(|S[1,1]|) *
DB(|S[2,1]|) *
DB(|S[2,2]|) *
-60
-70
1.7
1.8
1.9
Frequency (GHz)
2
2.1
13
14
15
16
17
18
Output Channel Power (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 5
February 2012
AH114
¼ W High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (AH114-89PCB2140)
Typical RF Performance
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output IP3
(+11 dBm / tone, 1 MHz spacing)
Vcc = +5 V
All passive components are of size 0603 unless otherwise noted.
RES
ID=R1
R=2700 Ohm
L2 should be placed 19.5° @ 2.14GHz
from pin 1 of the AH114.
PORT
P=1
Z=50 Ohm
CAP
ID=C4
C=56 pF
CAP
ID=L2
C=1.5 pF
DIODE1
ID=D1
5.6 V
IND
ID=L1
L=15 nH
2140 MHz
14 dB
-25 dB
-20 dB
+40 dBm
+23 dBm
6.0 dB
+5 V
150 mA
CAP
ID=C3
C=100000 pF
size 1206
CAP
ID=C2
C=1000 pF
size 0805
CAP
ID=C1
C=56 pF
Output P1dB
Noise Figure
Supply Voltage
Supply Current
CAP
ID=C5
C=56 pF
PORT
P=2
Z=50 Ohm
CAP
ID=C6
C=1.5 pF
SUBCKT
ID=U1
NET="AH114"
CAP
ID=C9
C=0.8 pF
C9 should be placed at the silk
screen marker "6" on the WJ evaluation board.
The capacitor should be placed
39° @ 2.14GHz from pin 3.
Measured parameters were taken at 25
°C.
C6 should be placed at the silk
screen marker "F" on the WJ evaluation board.
The capacitor should be placed
33° @ 2.14GHz from pin 1.
W-CDMA ACLR vs. Channel Power
15
10
5
Magnitude (dB)
Application Circuit: 2140 MHz
-35
-40
ACLR (dBc)
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
freq = 2140 MHz
0
-5
-10
-15
-20
-25
1.9
DB(|S[1,1]|) *
DB(|S[2,1]|) *
DB(|S[2,2]|) *
-45
-50
-55
-60
2
2.1
Frequency (GHz)
2.2
2.3
12
13
14
15
16
Output Channel Power (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 5
February 2012
AH114
¼ W High Linearity InGaP HBT Amplifier
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260
°C
reflow temperature) and leaded
(maximum 245
°C
reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
AH114-89G (Green / Lead-free SOT-89 Package) Mechanical Information
Outline Drawing
AH114G
XXXX-X
Product Marking
The component will be marked with an “AH114 G”
designator with an alphanumeric lot code on the top
surface of the package.
ESD / MSL Information
ESD Rating:
Test:
Standard:
MSL Rating:
Standard:
Class 1A
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Level 3 at +260
°C
convection reflow
JEDEC Standard J-STD-020
Land Pattern
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device.
Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to
ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a heatsink.
Ensure that the ground / thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the region where
the board contacts the heatsink.
5. RF trace width depends upon the PC board material and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 5 of 5
February 2012
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