SEMiX453GB17E4Ip
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 1000 V
V
GE
≤
15 V
V
CES
≤
1700 V
T
j
= 25 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1700
731
555
450
1350
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
1700
T
c
= 25 °C
T
c
= 80 °C
557
412
450
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
2565
-40 ... 175
210
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3p shunt
®
V
GES
t
psc
T
j
V
RRM
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Inverse diode
SEMiX453GB17E4Ip
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
T
j
= 25 °C
T
j
= 175 °C
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
R
th(c-s)
R
th(c-s)
Conditions
I
C
= 450 A
V
GE
= 15 V
chiplevel
chiplevel
V
GE
= 15 V
chiplevel
V
GE
= 0 V
V
CE
= 1700 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 900 V
I
C
= 450 A
V
GE
= +15/-15 V
R
G on
= 2.7
Ω
R
G off
= 2.7
Ω
di/dt
on
= 4300 A/µs
di/dt
off
= 2200 A/µs
du/dt = 3200 V/µs
L
s
= 21 nH
per IGBT
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.90
2.26
1.1
1
1.78
2.8
max.
2.20
2.45
1.2
1.1
2.2
3
6.4
5
Unit
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
Remarks
• Product reliability results are valid for
T
j
=150°C
• V
isol
between temperature sensor and
power section is only 2500V
V
GE
=V
CE
, I
C
= 18 mA
T
j
= 25 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5.2
5.8
36
1.50
1.14
3600
1.67
270
90
153
815
200
150
0.06
0.029
0.02
K/W
K/W
K/W
per IGBT (λ
grease
=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
GB + shunt
© by SEMIKRON
Rev. 6.0 – 24.06.2015
1
SEMiX453GB17E4Ip
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
1.2
1.16
min.
typ.
1.98
2.11
1.32
1.08
1.5
2.3
350
130
73
max.
2.37
2.52
1.56
1.22
1.8
2.9
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 450 A
V
GE
= 0 V
chiplevel
V
F0
chiplevel
r
F
chiplevel
SEMiX
®
3p shunt
I
RRM
Q
rr
E
rr
R
th(j-c)
R
th(c-s)
R
th(c-s)
Module
L
CE
R
CC'+EE'
Rth
(c-s)1
Rth
(c-s)2
Rth
(c-s)2
M
s
M
t
w
I
F
= 450 A
T
j
= 150 °C
di/dt
off
= 4850 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 900 V
per diode
per diode (λ
grease
=0.81 W/(m*K))
per diode, pre-applied phase change
material
0.1
0.048
0.038
20
K/W
K/W
K/W
nH
mΩ
mΩ
K/W
K/W
K/W
SEMiX453GB17E4Ip
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
res. terminal-chip, T
C
= 25 °C
shunt excluded
T
C
= 150 °C
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λ
grease
=0.81 W/
(m*K))
including thermal coupling,
Ts underneath module, pre-applied
phase change material
to heat sink (M5)
to terminals (M6)
3
3
0.85
1.2
0.009
0.014
0.011
6
6
350
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Nm
Nm
Nm
g
Ω
K
Remarks
• Product reliability results are valid for
T
j
=150°C
• V
isol
between temperature sensor and
power section is only 2500V
Temperature Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
Characteristics
Symbol
Shunt
I
Shunt
R
Shunt
α
Conditions
T
c
= 100 °C, T
Shunt,max
= 170 °C,
R
th
= 4 K/W
Tolerance = ±1 %
min.
typ.
max.
210
Unit
A
mΩ
ppm/K
0.40
50
GB + shunt
2
Rev. 6.0 – 24.06.2015
© by SEMIKRON
SEMiX453GB17E4Ip
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 6.0 – 24.06.2015
3
SEMiX453GB17E4Ip
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 6.0 – 24.06.2015
© by SEMIKRON
SEMiX453GB17E4Ip
SEMiX 3p shunt
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 6.0 – 24.06.2015
5
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