SKiiP 12ACC12T4V10
Absolute Maximum Ratings
Symbol
IGBT 1 - 6
V
CES
I
C
I
C
T
j
= 25 °C
λ
paste
=0.8 W/(mK) T
s
= 25 °C
T
j
= 175 °C
T
s
= 70 °C
λ
paste
=2.5 W/(mK) T
s
= 25 °C
T
j
= 175 °C
T
s
= 70 °C
I
CRM
= 3 x I
Cnom
V
CC
= 800 V
V
GE
≤
15 V
V
CES
≤
1200 V
1200
18
15
19
16
8
24
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
1200
28
23
31
26
15
I
CRM
= 3 x I
Cnom
V
CC
= 800 V
V
GE
≤
15 V
V
CES
≤
1200 V
45
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
1200
14
11
15
12
8
I
FRM
= 2xI
Fnom
10 ms, sin 180°, T
j
= 150 °C
16
55
-40 ... 150
T
j
= 25 °C
λ
paste
=0.8 W/(mK) T
s
= 25 °C
T
j
= 175 °C
T
s
= 70 °C
λ
paste
=2.5 W/(mK) T
s
= 25 °C
T
j
= 175 °C
T
s
= 70 °C
I
FRM
= 3 x I
Fnom
10 ms, sin 180°, T
j
= 150 °C
1200
23
18
24
20
15
45
65
-40 ... 175
20 A per spring
AC sinus 50 Hz, 1 min
20
-40 ... 125
2500
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
MiniSKiiP 1
Twin 6-pack
SKiiP 12ACC12T4V10
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
®
I
Cnom
I
CRM
V
GES
t
psc
T
j
V
CES
I
C
I
C
I
Cnom
I
CRM
V
GES
t
psc
T
j
Diode 1 - 6
V
RRM
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
j
Diode 7 - 12
V
RRM
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 25 °C
λ
paste
=0.8 W/(mK) T
s
= 25 °C
T
j
= 150 °C
T
s
= 70 °C
λ
paste
=2.5 W/(mK) T
s
= 25 °C
T
j
= 150 °C
T
s
= 70 °C
IGBT 7 - 12
T
j
= 25 °C
λ
paste
=0.8 W/(mK) T
s
= 25 °C
T
j
= 175 °C
T
s
= 70 °C
λ
paste
=2.5 W/(mK) T
s
= 25 °C
T
j
= 175 °C
T
s
= 70 °C
Typical Applications*
• 4Q inverters
Remarks
• Max. case temperature limited to
T
C
=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage V
DC
≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
ACC
© by SEMIKRON
Rev. 5.0 – 20.11.2015
1
SKiiP 12ACC12T4V10
Characteristics
Symbol
IGBT 1 - 6
V
CE(sat)
V
CE0
r
CE
Conditions
I
C
= 8 A
V
GE
= 15 V
chiplevel
chiplevel
V
GE
= 15 V
chiplevel
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
T
j
= 125 °C
I
C
= 8 A
T
j
= 125 °C
R
G on
= 51
Ω
T
j
= 125 °C
R
G off
= 51
Ω
T
j
= 125 °C
di/dt
on
= 97 A/µs
di/dt
off
= 106 A/µs T
j
= 125 °C
du/dt = 3300 V/µs
V
GE
= +15/-15 V
T
j
= 125 °C
L
s
= 22 nH
per IGBT,
λ
paste
=0.8 W/(mK)
per IGBT,
λ
paste
=2.5 W/(mK)
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.85
2.25
0.80
0.70
131
194
max.
2.10
2.45
0.90
0.80
150
206
6.5
0.3
Unit
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
MiniSKiiP
®
1
Twin 6-pack
SKiiP 12ACC12T4V10
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
R
th(j-s)
V
GE
= V
CE
V, I
C
= 1 mA
T
j
= 25 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
0.1
0.49
0.05
0.03
45
0.0
117
70
1
300
120
0.7
1.84
1.6
1.85
2.25
0.80
0.70
70
103
Typical Applications*
• 4Q inverters
Remarks
• Max. case temperature limited to
T
C
=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage V
DC
≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
IGBT 7 - 12
I
C
= 15 A
V
CE(sat)
V
GE
= 15 V
chiplevel
V
CE0
chiplevel
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
R
th(j-s)
V
GE
= 15 V
chiplevel
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
2.10
2.45
0.90
0.80
80
110
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
V
GE
= V
CE
V, I
C
= 1 mA
T
j
= 25 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
0.1
-
0.90
0.08
0.06
85
0
92
74
2.1
319
77
1.6
1.3
1.1
T
j
= 25 °C
V
CC
= 600 V
T
j
= 150 °C
I
C
= 15 A
T
j
= 150 °C
R
G on
= 39
Ω
T
j
= 150 °C
R
G off
= 39
Ω
di/dt
on
= 188 A/µs T
j
= 150 °C
di/dt
off
= 200 A/µs T
j
= 150 °C
du/dt = 3500 V/µs
V
GE
= +15/-15 V
T
j
= 150 °C
L
s
= 22 nH
per IGBT,
λ
paste
=0.8 W/(mK)
per IGBT,
λ
paste
=2.5 W/(mK)
ACC
2
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
Characteristics
Symbol
Diode 1 - 6
V
F
= V
EC
V
F0
r
F
Conditions
I
F
= 8 A
V
GE
= 0 V
chiplevel
chiplevel
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
min.
typ.
1.96
2.08
1.00
0.80
120
160
5.4
1.9
0.8
2.5
2.2
2.38
2.44
1.30
0.90
72
103
8.9
2.2
0.8
1.92
1.7
60
max.
2.22
2.34
1.10
0.90
140
180
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
MiniSKiiP
®
1
Twin 6-pack
SKiiP 12ACC12T4V10
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
I
RRM
Q
rr
E
rr
R
th(j-s)
R
th(j-s)
I
F
= 8 A
T
j
= 125 °C
di/dt
off
= 93 A/µs
T
j
= 125 °C
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per Diode,
λ
paste
=0.8 W/(mK)
per Diode,
λ
paste
=2.5 W/(mK)
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
Diode 7 - 12
V
F
= V
EC
I
F
= 15 A
V
GE
= 0 V
chiplevel
V
F0
chiplevel
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
R
th(j-s)
Module
L
CE
M
s
w
Temperature Sensor
R
100
R(T)
to heat sink
chiplevel
2.71
2.77
1.50
1.10
81
111
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
nH
Typical Applications*
• 4Q inverters
Remarks
• Max. case temperature limited to
T
C
=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage V
DC
≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
I
F
= 15 A
T
j
= 150 °C
di/dt
off
= 220 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per Diode,
λ
paste
=0.8 W/(mK)
per Diode,
λ
paste
=2.5 W/(mK)
2
30
2.5
Nm
g
T
r
=100°C (R
25
=1000Ω)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
2
], A = 7.635*10
-3
°C
-1
,
B = 1.731*10
-5
°C
-2
1670 ±
3%
Ω
ACC
© by SEMIKRON
Rev. 5.0 – 20.11.2015
3
SKiiP 12ACC12T4V10
IGBT 1-6 - Fig. 1:
Typ. output characteristic
IGBT 1-6 - Fig. 2:
Typ. rated current vs. temperature I
C
= f(T
S
)
IGBT 1-6 - Fig. 3:
Typ. turn-on /-off energy = f(I
C
)
IGBT 1-6 - Fig. 4:
Typ. turn-on /-off energy = f(R
G
)
IGBT 1-6 - Fig. 5:
Typ. transfer characteristic
4
IGBT 1-6 - Fig. 6:
Typ. gate charge characteristic
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
IGBT 1-6 - Fig. 7:
Typ. switching times vs. I
C
IGBT 1-6 - Fig. 8:
Typ. switching times vs. gate resistor R
G
IGBT 1-6 - Fig. 9:
Transient thermal impedance of IGBT and Diode
IGBT 1-6 - Fig. 10:
CAL diode forward characteristic
IGBT 1-6 - Fig. 11:
Typ. CAL diode peak reverse recovery current
© by SEMIKRON
IGBT 1-6 - Fig. 12:
Typ. CAL diode recovery charge
Rev. 5.0 – 20.11.2015
5
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