HRLF120N10H
Jan 2016
HRLF120N10H
100V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Key Parameters
Parameter
BV
DSS
I
D
R
DS(on), typ @10V
R
DS(on), typ @4.5V
Value
100
60
9.5
11.5
Unit
V
A
mΩ
mΩ
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
DC/DC in Telecoms and Inductrial
Package & Internal Circuit
8DFN 5x6
D
D
D
D
S
S
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
P
D
T
J
, T
STG
T
J
=25℃ unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25℃
Drain Current
T
C
= 100℃
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
T
A
= 25℃
Operating and Storage Temperature Range
L=0.1mH
T
C
= 25℃
Value
100
±20
60
38
160
22
83
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
℃
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (steady state)
Parameter
Typ.
--
--
Max.
1.5
62
Units
℃/W
℃/W
◎
SEMIHOW REV.A0,Jan 2016
HRLF120N10H
Electrical Characteristics
T
J
=25
°C
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
㎂
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 5, I
D
= 20 A
1.0
--
--
--
--
9.5
11.5
30
3.0
12
15
--
V
mΩ
mΩ
S
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
㎂
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, T
J
= 100℃
V
GS
=
±20
V, V
DS
= 0 V
100
--
--
--
--
--
--
--
--
1
100
±100
V
㎂
㎂
㎁
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0 V, V
DS
= 0 V, f = 1MHz
V
DS
= 50 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
2275
162
7.9
1.5
--
--
--
--
㎊
㎊
㎊
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g (10V)
Q
g (4.5V)
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 50 V, I
D
= 12 A,
V
GS
= 10 V
V
DS
= 50 V, I
D
= 12 A,
R
G
= 10
Ω
--
--
--
--
--
--
--
--
8
3
26
4
29
14
5
5
--
--
--
--
--
--
--
--
㎱
㎱
㎱
㎱
nC
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 12 A, V
GS
= 0 V
I
S
= 12 A, V
GS
= 0 V
di
F
/dt = 500 A/μs
--
--
--
--
--
--
--
0.9
33
157
60
A
160
1.2
--
--
V
㎱
nC
◎
SEMIHOW REV.A0,Jan 2016
HRLF120N10H
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎
SEMIHOW REV.A0,Jan 2016
HRLF120N10H
Typical Characteristics
(continued)
Figure 7. On-Resistance Variation
vs Gate-Source Voltage
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
◎
SEMIHOW REV.A0,Jan 2016
HRLF120N10H
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
BV
DSS
I
AS
1
E
AS
= ---- L
L
I
AS2
2
I
D
(t)
10V
DUT
V
DD
t
p
V
DS
(t)
Time
◎
SEMIHOW REV.A0,Jan 2016
机器人开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
