TBD62308AFAG
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62308AFAG
4channel Low active high current sink type DMOS transistor array
TBD62308AFAG are DMOS transistor array with 4 circuits.
It has a clamp diode for switching inductive loads built-in in
each output. Please be careful about thermal conditions
during use.
Features
•
•
•
•
•
•
4 circuits built-in
High voltage
:
V
OUT
= 50 V (MAX)
High current
:
I
OUT
= 1.5 A/ch (MAX)
Input voltage(output on)
:
V
CC
- 3.5 V (MAX)
Input voltage(output off)
:
V
CC
- 0.4 V (MIN)
Package
:
P-SSOP24-0613-1.00-001
P-SSOP24-0613-1.00-001
Weight: 0.35 g (Typ.)
Pin connection (top view)
COMMON O4
24
23
I4
22
NC GND GND GND GND NC
21
20
19
18
17
16
I3
15
O3 COMMON
14
13
1
2
VCC1 O1
3
I1
4
9
5
6
7
8
NC GND GND GND GND NC
10
I2
11 12
O2 VCC2
Pin connection may be simplified for explanatory purpose.
©2016 TOSHIBA Corporation
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2016-03-08
TBD62308AFAG
Pin explanations
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Pin name
VCC1
O1
I1
NC
GND
GND
GND
GND
NC
I2
O2
VCC2
COMMON
O3
I3
NC
GND
GND
GND
GND
NC
I4
O4
COMMON
Function
Power supply pin
Output pin 1
Input pin 1
Non-connection pin
GND pin
GND pin
GND pin
GND pin
Non-connection pin
Input pin 2
Output pin 2
Power supply pin
Common pin
Output pin 3
Input pin 3
Non-connection pin
GND pin
GND pin
GND pin
GND pin
Non-connection pin
Input pin 4
Output pin 4
Common pin
Equivalent circuit
Clamp diode
COMMON
VCC
OUTPUT
INPUT
Clamp
Circuit
Equivalent circuit may be simplified for explanatory purpose.
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2016-03-08
TBD62308AFAG
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power supply voltage
Output voltage
COMMON pin voltage
Output current
Input voltage
Clamp diode reverse
voltage
Clamp diode forward
current
Power dissipation
Operating temperature
Storage temperature
Symbol
V
CC
V
OUT
V
COM
I
OUT
V
IN
V
R
I
F
P
D
T
opr
T
stg
Rating
−0.5
to 6.0
50
−0.5
to 50
1.5
−0.5
to 30
50
1.5
0.9 (Note 1) / 1.4 (Note 2)
−40
to 85
−55
to 150
Unit
V
V
V
A/ch
V
V
A
W
°C
°C
Note 1: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 7.2 mW/°C.
Note 2: On PCB (Size: 60 mm
×
30 mm
×
1.6 mm, Cu area: 30%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 11.2 mW/°C.
Operating Ranges (Ta =
−40
to 85°C unless otherwise noted)
Characteristics
Power supply voltage
Output voltage
COMMON pin voltage
Symbol
V
CC
V
OUT
V
COM
Condition
―
―
―
1 circuit ON, Ta = 25°C
Duty
=
10%
t
pw
=
25 ms
4 circuits ON
Ta
=
85°C
Duty
=
50%
T
j
=
120°C
IOUT = 100 mA or upper,
VOUT = 2 V
IOUT = 100
μA
or less,
VOUT = 2 V
―
Min
4.5
―
0
0
0
0
0
V
CC
-0.4
―
Typ.
―
―
―
―
―
―
―
―
―
Max
5.5
50
50
1250
990
440
V
CC
-3.5
25
1.25
V
V
A
Unit
V
V
V
Output current
(Note 1)
I
OUT
mA/ch
Input voltage (Output on)
Input voltage (Output off)
Clamp diode
forward current
V
IN (ON)
V
IN (OFF)
I
F
Note 1: On PCB (Size: 60 mm
×
30 mm
×
1.6 mm, Cu area: 30%, single-side glass epoxy).
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TBD62308AFAG
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics
Output leakage current
Symbol
I
leak
Test
Circuit
1
Condition
V
IN
= V
CC
, V
OUT
= 50 V
Ta = 85°C
I
OUT
= 1.25 A, V
IN
= 0 V
V
CC
= 5.0 V
I
OUT
= 0.75 A, V
IN
= 0 V
V
CC
= 5.0 V
V
CC
= 5.5 V, V
IN
= 0 V
V
CC
= 5.5 V, V
IN
= V
CC
I
OUT
= 100 mA or upper
V
OUT
= 2 V
V
R
= 50 V, Ta = 85°C
I
F
= 1.25 A
V
CC
= 5.5 V, V
IN
= 0 V
V
CC
= 5.5 V, V
IN
= V
CC
V
OUT
= 50 V
R
L
= 42
Ω
C
L
= 15 pF
V
CC
= 5.0 V
Min
―
―
―
―
―
V
CC
- 3.5 V
―
―
―
―
―
―
Typ.
―
0.48
(0.38)
0.28
(0.37)
-0.1
―
―
―
―
0.2
―
1.0
2.0
Max
1.0
1.25
(1.0)
0.75
(1.0)
-0.3
100
―
1.0
2.0
1.0
100
―
μs
―
Unit
μA
Output voltage
(Output ON-resistance)
Input current (Output on)
Input current (Output off)
Input voltage (Output on)
Clamp diode
reverse current
Clamp diode
forward voltage
Consumption current
(Output on)
Consumption current
(Output off)
Turn−on delay
Turn−off delay
V
DS
(R
ON
)
I
IN(ON)
I
IN(OFF)
V
IN(ON)
I
R
V
F
I
CC(ON)
I
CC(OFF)
t
ON
2
V
(Ω)
mA
μA
V
μA
V
mA/ch
μA/ch
3
4
5
6
7
8
9
10
t
OFF
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2016-03-08
TBD62308AFAG
Test circuit
1. I
leak
VCC
COMMON
2. V
DS
(R
ON
)
VCC
COMMON
OUTPUT
INPUT
GND
INPUT
OUTPUT
I
leak
V
OUT
V
CC
=V
IN
V
IN
GND
I
OUT
V
DS
V
CC
R
ON
= V
DS
/ I
OUT
3. I
IN (ON)
VCC
COMMON
4. I
IN (OFF)
VCC
COMMON
I
IN(ON)
V
IN
INPUT
OUTPUT
I
IN(OFF)
V
CC
INPUT
OUTPUT
V
CC
=V
IN
GND
GND
5. V
IN (ON)
VCC
COMMON
6. I
R
VCC
COMMON
I
R
INPUT
OUTPUT
INPUT
V
R
OUTPUT
GND
V
IN(ON)
GND
I
OUT
V
OUT
V
CC
7. V
F
VCC
COMMON
8. I
CC(ON)
VCC
COMMON
I
F
INPUT
I
CC(ON)
V
F
OUTPUT
GND
INPUT
OUTPUT
V
IN
GND
V
CC
9. I
CC(OFF)
I
CC(OFF)
VCC
COMMON
OUTPUT
INPUT
V
CC
=V
IN
GND
Test circuit may be simplified for explanatory purpose.
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2016-03-08
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