plastic package. This power amplifier operates from
28.5 to 31 GHz and provides 22 dB of linear gain,
4 W saturated output power, and 23% efficiency
while biased at 6 V.
The MAAP-011139 is a power amplifier ideally
suited for VSAT communications.
This product is fabricated using a GaAs pHEMT
process which features full passivation for enhanced
reliability.
10
V
G
11
V
G
12
N/C
13
N/C
14
V
D
3
15
V
D
4
16
GND
Pin Configuration
3
Pin No.
1
2
3
4
Function
Ground
No Connection
Ground
RF Input
Ground
No Connection
Ground
Gate Voltage
Gate Voltage
No Connection
Drain Voltage 3
Drain Voltage 4
Ground
Pin No.
18, 19
20
21
22
23
24, 25
26
27
28
29
30
31
32
Paddle
4
Function
No Connection
Ground
RF Output
Ground
No Connection
Ground
Drain Voltage 4
Drain Voltage 3
Drain Voltage 3
Drain Voltage 2
No Connection
Drain Voltage 1
Ground
Ground
Ordering Information
1,2
Part Number
MAAP-011139-TR0500
MAAP-011139-SMB
Package
500 piece reel
Sample Board
5
6, 7
8, 9
10
11
12, 13
14
15
16, 17
1. Reference Application Note M513 for reel size information.
2. All sample boards include 3 loose parts.
*
Restrictions on Hazardous Substances,
European Union Directive 2011/65/EU.
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
GND
MAAP-011139
Power Amplifier, 4 W
28.5 - 31 GHz
Electrical Specifications: Freq. = 30 GHz, T
A
= +25°C, V
D
= 6 V, Z
0
= 50 Ω
Parameter
Gain
P
OUT
IM3 Level
Power Added Efficiency
Input Return Loss
Output Return Loss
Quiescent Current
Current
Test Conditions
P
IN
= 0 dBm
P
IN
= +17 dBm
P
OUT
= +29 dBm / tone
P
SAT
(P
IN
= +17 dBm)
P
IN
= -20 dBm
P
IN
= -20 dBm
I
DQ
(see bias conditions, page 5 )
P
SAT
(P
IN
= +17 dBm)
Units
dB
dBm
dBc
%
dB
dB
mA
mA
Min.
19
34.5
—
—
—
—
—
—
Typ.
22
36.0
-27
23
10
10
2000
2700
Max.
—
—
—
—
—
—
—
—
Rev. V1
Maximum Operating Conditions
Parameter
Input Power
Junction Temperature
5,6
Operating Temperature
Maximum
+17 dBm
+160°C
-40°C to +85°C
Absolute Maximum Ratings
7,8
Parameter
Input Power
Drain Voltage
Gate Voltage
Junction Temperature
9
Storage Temperature
Absolute Maximum
+23 dBm
+6.5 V
-3 to 0 V
+175°C
-65°C to +125°C
5. Operating at nominal conditions with junction temperature
≤ +160°C will ensure MTTF > 1 x 10
6
hours.
6. Junction Temperature (T
J
) = T
C
+
Ө
JC
* [(V * I) - (P
OUT
- P
IN
)].
Typical thermal resistance (Ө
JC
) = 4.4 °C/W.
a) For T
C
= +25°C,
T
J
= +79°C @ 6 V, 2.7 A, P
OUT
= 36 dBm, P
IN
= 17 dBm
b) For T
C
= +85°C,
T
J
= +143°C @ 6 V, 2.7 A, P
OUT
= 35.1 dBm, P
IN
= 17 dBm
7. Exceeding any one or combination of these limits may cause
permanent damage to this device.
8. MACOM does not recommend sustained operation near these
survivability limits.
9.
Junction Temperature directly effects device MTTF. Junction
temperature should be kept as low as possible to maximize
lifetime.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011139
Power Amplifier, 4 W
28.5 - 31 GHz
Sample Board Layout
C13
Rev. V1
GND
GND
V
D
1
C8
L1
R1
C1
L2
C2 R2
C4
C3
L3
R3
R4
C9
V
D
2
C14
MAAP011139
R7
C12
C5
R5
C7
C6
R6
C10
L4
C11
V
G
V
D
1
V
D
2
C15
GND
GND
GND
C16
Application Schematic
V
D
1
V
D
2
Parts List
Part
C1 - C7
Value
0.01 µF
1 µF
10 µF
10
Ω
BLM18HE601SN1D
Case Style
0402
0603
0805
0402
0603
C13
C8
L1
R1
C1
L2
R2
C2
L3
R3
C3
C9
C14
C8 - C12
R4
C4
C13 - C16
R1 - R7
RF O
V
D
1
V
D
2
V
D
3
V
D
4
RF
IN
L1 - L4
(Chip Ferrite Bead)
V
G
V
D
3
V
D
4
Sample Board Material Specifications
R7
C7
R5
C5
R6
C6
L4
C10
C11
C15
Top Layer:
1/2 oz Copper Cladding, 0.017 mm thickness
Dielectric Layer:
Rogers RO4003C 0.203 mm thickness
Bottom Layer:
1/2 oz Copper Cladding, 0.017 mm thickness
Finished overall thickness:
0.238 mm
C16
C12
V
G
V
D1
V
D
2
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011139
Power Amplifier, 4 W
28.5 - 31 GHz
Rev. V1
Sample Board Layout: RF input and output port pre-matching circuit patterns are
designed to compensate for packaging effects. Input and output match patterns are
identical.
1810
1685
Diameter = 0.3 mm
200
810
250
430
760
430
225
All units are in microns.
185
500
Copper-filled vias are required beneath the package.
Diameter = 0.3 mm, Spacing
vias are required beneath
Copper filled
= 0.5 mm, 7x7 array
the package.
Diameter = 0.3 mm, Spacing = 0.5 mm,
7x7 array
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011139
Power Amplifier, 4 W
28.5 - 31 GHz
Rev. V1
Application Information
The MAAP-011139 is designed to be easy to use
yet high performance. The ultra small size and
simple bias allow easy placement on system board.
RF input and output ports are DC de-coupled
internally.
Operating the MAAP-011139
Turn-on
1. Apply V
G
(-1.5 V).
2. Apply V
D
(6.0 V typical).
3. Set I
DQ
by adjusting V
G
more positive
(typically V
G
~ -0.9 V for I
DQ
= 2000 mA).
4. Apply RF
IN
signal.
Biasing conditions
Recommended biasing conditions are V
D
= 6 V,
I
DQ
= 2000 mA (controlled with V
G
). The drain bias
voltage range is 3 to 6 V, and the quiescent drain
current biasing range is 1500 to 2500 mA.
V
G
pins 10 and 11 are connected internally; choose
either pin for layout convenience. Muting can be
accomplished by setting the V
G
to the pinched off
voltage (V
G
= -2 V).
V
D
bias must be applied to V
D
1, V
D
2, V
D
3, and V
D
4
pins.
V
D
3 pins 14 and either pin 27 or 28 are required for
current symmetry. Pins 27 and 28 are connected
internally; choose either pin for layout convenience.
Both V
D
4 pins 15 and 26 are required for current
symmetry.
Turn-off
1. Remove RF
IN
signal.
2. Decrease V
G
to -1.5 V.
3. Decrease V
D
to 0 V.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM Class
1A devices.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
