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TRS24N65D

产品描述SiC Schottky Barrier Diode
文件大小161KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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TRS24N65D概述

SiC Schottky Barrier Diode

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TRS24N65D
SiC Schottky Barrier Diode
TRS24N65D
1. Applications
Power Factor Correction
Solar Inverters
Uninterruptible Power Supplies
DC-DC Converters
2. Features
(1)
(2)
Forward DC current(Per Leg/Both Legs) I
F(DC)
= 12/24 A
Repetitive peak reverse voltage V
RRM
= 650 V
3. Packaging and Internal Circuit Pin Assignment
1: Anode
2: Cathode
3: Anode
TO-247
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Repetitive peak reverse voltage
Forward DC current
Forward DC current
Forward pulse current
Forward pulse current
I
2
t limit value
I
2
t limit value
Junction temperature
Storage temperature
Mounting torque
Per Leg
Both Legs
Per Leg
Both Legs
Per Leg
Both Legs
T
j
T
stg
TOR
I
2
t
(Note 2)
I
FP
(Note 1)
Symbol
V
RRM
I
F(DC)
Note
Rating
650
12
24
110
220
18.0
72.0
175
-55 to 175
0.8
Nm
A
2
s
Unit
V
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: t = 100
µs
Note 2: f = 50 Hz
Note:
Start of commercial production
1
2014-02
2014-04-25
Rev.3.0

 
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