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TRS10E65C

产品描述SiC Schottky Barrier Diode
产品类别分立半导体    二极管   
文件大小151KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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TRS10E65C概述

SiC Schottky Barrier Diode

TRS10E65C规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明R-PSFM-T2
Reach Compliance Codeunknow
ECCN代码EAR99
Samacsys DescriptiSiC Schottky Barrier Diode, TO-220-2L
应用GENERAL PURPOSE
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON CARBIDE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.7 V
JEDEC-95代码TO-220AC
JESD-30 代码R-PSFM-T2
最大非重复峰值正向电流100 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压650 V
最大反向电流90 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

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TRS10E65C
SiC Schottky Barrier Diode
TRS10E65C
1. Applications
Power Factor Correction
Solar Inverters
Uninterruptible Power Supplies
DC-DC Converters
2. Features
(1)
(2)
Forward DC current: I
F(DC)
= 10 A
Repetitive peak reverse voltage: V
RRM
= 650 V
3. Packaging and Internal Circuit
1: Cathode
2: Anode
TO-220-2L
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Repetitive peak reverse voltage
Forward DC current
Forward pulse current
I
2
t limit value
Junction temperature
Storage temperature
Mounting torque
Symbol
V
RRM
I
F(DC)
I
FP
I
2
t
T
j
T
stg
TOR
(Note 1)
(Note 2)
Note
Rating
650
10
100
12.5
175
-55 to 175
0.6
Nm
A
2
s
Unit
V
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: t = 100
µs
Note 2: f = 50 Hz
Note:
Start of commercial production
1
2013-08
2014-03-17
Rev.3.0

 
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