the silicon pedestals which form the series - shunt
diodes and vias to be embedded into low loss, low
dispersion glass. By incorporating small spacing
between circuit elements, the result is an HMIC
chip with low insertion loss and high isolation at
frequencies up to 26.5 GHz. It is designed to be
used as a moderate power, high performance
switch and provide superior performance when
compared to similar designs that use discrete
components.
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large
gold bond pads help facilitate connection of low
inductance ribbons. The gold metallization on the
backside of the chip allows for attachment via
80/20, gold/tin solder or conductive silver epoxy.
The MASW-004100-1193 is a high performance
switch suitable for use in multi-band ECM, radar,
and instrumentation control circuits where high
isolation to insertion loss ratios are required. With a
standard ±5 V, TTL controlled, PIN diode driver,
50 ns switching speeds are achievable.
J3
J4
J2
J5
J1
Ordering Information
Part Number
MASW-004100-1193(xx)
Package
xx = 0G
Gel Pack
Package
xx = 0W
Waffle Pack
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-004100-1193
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V4
Electrical Specifications:
T
A
= 25°C, 20 mA (On-Wafer Measurements)
Parameter
Insertion Loss
Isolation
Input Return Loss
Output Return Loss
Switching Speed
1
Test Conditions
20 GHz
20 GHz
20 GHz
20 GHz
10 GHz
Units
dB
dB
dB
dB
ns
Min.
—
28
—
—
—
Typ.
0.9
34
15
15
50
Max.
1.3
—
—
—
—
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, I
C
= C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
Absolute Maximum Ratings
2,3,4
Parameter
RF CW Incident Power
Reverse Voltage
Bias Current per Port
Operating Temperature
Storage Temperature
Absolute Maximum
+33 dBm
-25 V
±50 mA @ +25°C
-65°C to +125°C
-65°C to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
4. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-004100-1193
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V4
Typical Performance Curves:
Insertion Loss vs. Frequency
0.0
Isolation vs. Frequency
-30
-0.4
-40
S21 (dB)
-1.2
J2
J3
J4
J5
S21 (dB)
-0.8
-50
-60
J2
J3
J4
J5
-1.6
-70
-2.0
0
5
10
15
20
25
30
-80
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Frequency
0
Output Return Loss vs. Frequency
0
-10
-10
S11 (dB)
-30
J2
J3
J4
J5
S22 (dB)
-20
-20
-30
J2
J3
J4
J5
-40
-40
-50
0
5
10
15
20
25
30
-50
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-004100-1193
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V4
Operation of the MASW-004100-1193 PIN Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the isolated
ports as shown below in Fig.1 is required for proper operation of the switch. The backside area of the die is the
RF and DC ground return and the DC return is through the common port J1. A constant current source should be
used to supply the DC control currents. The control voltages at these points will not exceed ±1.5 volts for supply
currents up to ±20 mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. On all isolated ports, the shunt diode is forward biased and the series diode is reverse biased. A typical
bias network design that will produce >30 dB RF to DC isolation is shown below in Figure 1 .
The optimum insertion loss, P1dB, IP3, and switching speed are attained by using a voltage pull-up resistor in the
DC return path, J1. A minimum value of |-2V| is recommended using a standard, ± 5 V TTL controlled PIN driver
such as MACOM’s
MADR-009190-000100.
Typical 2 - 18 GHz Bias Network
J1
39 pF
22 pF
DC Bias (±1.2 V typ.)
22 nH
100
Ω
39 pF
22 nH
J5
22 pF
MA4SW410
J2
J4
J3
Fig. 1
Typical Driver Connections
DC Control Current (mA)
J2
-20
+20
+20
+20
J3
+20
-20
+20
+20
J4
+20
+20
-20
+20
J5
+20
+20
+20
-20
J1-J2
low loss
Isolation
Isolation
Isolation
RF Output States
J1-J3
Isolation
low loss
Isolation
Isolation
J1-J4
Isolation
Isolation
low loss
Isolation
J1-J5
Isolation
Isolation
Isolation
low loss
Compatible MACOM Driver
MADR-009190-000100
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-004100-1193
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V4
MASW-004100-1193 Chip Dimensions
5,6
A
C
D
E
B
G
F
H
I
J
All tolerances are ± .0005 inches
5. Topside and backside metallization is gold, 2.5 µm thick typical.
6. Yellow areas indicate wire bonding pads.
DIM
inches
A
B
C
D
E
F
G
H
I
J
Thickness
Bond Pads
5
Nominal
mm
1.67
1.19
1.37
0.31
1.08
0.22
0.11
0.11
0.84
1.56
.120
0.120 x 0.120
0.066
0.047
0.054
0.012
0.043
0.009
0.004
0.004
0.033
0.061
0.005
0.005 x 0.005
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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