series and shunt connected PIN diodes. This device
is designed for use in broadband, low to moderate
signal, high performance, switch applications up to
20 GHz. It is a surface mountable switch configured
for optimized performance and offers a distinct
advantage over MMIC, beamlead and chip and wire
hybrid designs. Because the PIN diodes of the
MASW-002103-1363 are integrated into the chip
and kept within close proximity, the parasitics
typically associated with other designs that use
individual components are kept to a minimum.
To minimize the parasitics and achieve high
performance the MASW-002103-1363 is fabricated
using MACOM’s HMIC (Heterolithic Microwave
Integrated Circuit) process. This process allows the
silicon pedestals, which form the series and shunt
diodes or vias, to be imbeded in low loss, low
dispersion glass. The combination of low loss glass
and using tight spacing between elements results in
an HMIC device with low loss and high isolation
through low millimeter wave frequencies.
The topside is fully encapsulated with silicon nitride
and also has an additional layer of polymer for
scratch and impact protection. The protective
coating guards against damage to the junction and
the anode airbridges during handling and assembly.
On the backside of the chip gold metalized pads
have been added to produce a solderable surmount
device.
Functional Schematic
J3
J1
J2
Pin Configuration
Pin
J1
J2
J3
Function
RFC
RF1
RF2
Ordering Information
Part Number
MASW-002103-13630G
MASW-002103-13635P
MASW-002103-13630P
MASW-002103-001SMB
MASW-002103-002SMB
Package
50 piece gel pack
500 piece reel
3000 piece reel
Sample Test Board
Demo Board
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-002103-1363
Silicon SPDT Surface Mount HMIC PIN Diode Switch
50 MHz - 20 GHz
Electrical Specifications: T
A
= 25°C, P
IN
= 0 dBm, Z
0
= 50 Ω, 20 mA/-10 V
Parameter
Insertion Loss
Frequency
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
2 GHz
0.05 GHz, 5 MHz Spacing, 10 dBm
0.5 GHz, 5 MHz Spacing ,20 dBm
1 GHz, 10 MHz Spacing, 20 dBm
2 GHz, 10 MHz Spacing, 20 dBm
—
—
Units
dB
Min.
—
38
28
23
20
17.3
16.5
—
Typ.
0.55
0.80
1.05
52
38
27
25
23
23
36
45
59
63
66
20
—
Max.
0.65
0.95
1.25
—
Rev. V11
Input to Output Isolation
dB
Return Loss
dB
—
Input 0.1dB Compression Point
dBm
—
IIP3
Switching Speed
1
Voltage Rating
2
dBm
ns
V
—
—
—
—
—
80
1. Typical Switching Speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers.
2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 µA maximum @ -80 volts.
Absolute Maximum Ratings
3,4,5
Parameter
RF CW Incident Power
Applied Reverse Voltage
Bias Current
Junction Temperature7,8
Operating Temperature
Storage Temperature
Absolute Maximum
38 dBm CW @ 2 GHz
33 dBm CW @ 20 GHz
|-80 V|
± 50 mA
+175°C
-65°C to +125°C
-65°C to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM class 1A
devices.
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near these
survivability limits.
5. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 20 mA (per diode)
@ +85°C.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-002103-1363
Silicon SPDT Surface Mount HMIC PIN Diode Switch
50 MHz - 20 GHz
Rev. V11
Typical Small Signal Performance @ +25°C (Probed On-Wafer RF Test)
Insertion Loss (20 mA Bias)
0.0
Isolation (20 mA Bias)
0
-0.5
-20
S21 (dB)
-1.0
S21 (dB)
0
5
10
15
20
25
-40
-1.5
-60
-2.0
-80
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Input Return Loss (20 mA Bias)
0
Input J1 to J2
Input J1 to J3
Output J2
Output J3
Maximum Input Power
12
10
-10
Input Power (W)
8
6
4
2
2 GHz, 6.7 W
S11 (dB)
-20
10 GHz, 3.5 W
20 GHz, 2.0 W
-30
-40
0
5
10
15
20
25
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Frequency (GHz)
Insertion Loss (dB)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-002103-1363
Silicon SPDT Surface Mount HMIC PIN Diode Switch
50 MHz - 20 GHz
Operation of the MASW-002103-1363 PIN Switch
Optimal operation of the MASW-002103-1363 is achieved by simultaneous application of negative DC voltage
and current to the low loss switching arm and positive DC voltage and current to the remaining switching arm as
shown in the circuit diagram below. DC return is achieved via R2 on the RFC path. In the low loss state, the
series diode must be forward biased with current and the shunt diode reverse biased with voltage. In the isolated
arm, the shunt diode is forward biased with current and the series diode is reverse biased with voltage.
Rev. V11
Typical Bias Network
Example:
J1 to J2→ Low Loss
R1 = 250
Ω
R2 = 450
Ω
B2 = -15 V
B3 = +6 V
Notes:
6. Assume Vf ~ 1 V @ 20 mA
7. R1 = 5 V / 0.02 A = 250
Ω;
R2 = 9 V / 0.02 A = 450
Ω
8. P
R1
= 0.02 A x 0.02 A x 250 = 0.1 W
9. P
R2
= 0.02 A x 0.02 A x 450 = 0.18 W
10. Inductors shown in the above schematic are RF bias chokes. The operating bandwidth of a broad-band PIN diode switch is often de-
pendent on the bias components, particularly the RF bias chokes. It is suggested that the response at the frequencies of interest be
measured with all the bias components in place prior to installing of MASW-002103-1363.
Typical Driver Connections
DC Control Current (mA)
B2
-15 V @ -20 mA
11
+6 V @ +20 mA
4
RF Output States
B3
J1-J2
low loss
Isolation
J1-J3
Isolation
low loss
+6 V @ +20 mA
-15 V @ 20 mA
11
11. The voltage applied to the off arm is allowed to vary provided a constant current is applied through the shunt diode on the off arm.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-002103-1363
Silicon SPDT Surface Mount HMIC PIN Diode Switch
50 MHz - 20 GHz
Outline Drawing (all dimensions in µm)
1545
125
Rev. V11
J2
J3
2225
DC & RF GND
J1
Top View
Side View
Bottom View
12. Bottom view shows the back metal foot print and mounting pads.
13. All dimension are +/-0.5 µm.
14. The center pad shown on the chip bottom view must be connected to RF and DC ground.
Inches
DIM
Min.
Width
Length
Thickness
0.060
0.087
0.004
Max.
0.062
0.089
0.006
Min.
1.52
2.20
0.10
mm
Max.
1.57
2.25
0.15
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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