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GBJ2506

产品描述4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小975KB,共2页
制造商Chenda
官网地址http://www.szchenda.com
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GBJ2506概述

4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ25005 THRU GBJ2510
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
? .134(3.4)
? .122(3.1)
Forward Current - 25.0 Amperes
GBJ
1.193(30.3)
1.169(29.7)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.198 MAX
(5.1)
.800(20.3)
.776(19.7)
? .134(3.4)
? .122(3.1)
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
The plastic material has U/L flammability
.118(3.0)*45°
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
.106(2.7)
.096(2.3)
+
~ ~ _
.441(11.2)
.425(10.8)
.114(2.9)
.098(2.5)
classification 94V-0
.402(10.2) .303(7.7).303(7.7)
SPACING
.386(9.8) .287(7.3).287(7.3)
.031(0.8)
.023(0.6)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ T
C
=100℃ (without heatsink)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per birdge element at 12.5A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
SYMBOLS
GBJ
25005
GBJ
2501
GBJ
2502
GBJ
2504
GBJ
2506
GBJ
2508
GBJ
2510
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
25.0
4.2
350
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
1.0
10
0.5
508
85
0.6
-55 to +150
-55 to +150
Volts
µ
A
mA
It Rating for Fusing (t<8.3ms)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
I
2
t
C
J
R
θ
JC
T
J
T
STG
A
2
s
pF
C/W
C
C
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
3.The typical data above is for reference only(典型值仅供参考).

GBJ2506相似产品对比

GBJ2506 GBJ25005 GBJ2501 GBJ2502 GBJ2504 GBJ2508 GBJ2510
描述 4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

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