patented hetero-junction technology. This technology
produces a switch with less loss than conventional
GaAs processes. As much as a 0.3 dB reduction in
insertion loss can be realized at 50GHz. These
devices are fabricated on an OMCVD epitaxial wafer
using a process designed for high device uniformity
and extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer for
scratch protection. The protective coating prevents
damage to the diode junction and anode air-bridges
during handling and assembly. Off chip bias circuitry
is required.
Yellow areas indicate bond pads
APPLICATIONS
The output port of this device, J2, is terminated into 50Ω
during isolation mode, which allows this signal to be
absorbed rather than reflected back. This functionality
makes it ideal for instrumentation and radar applications.
An absorptive switch can be added to other AlGaAs
reflective switches to improve isolation VSWR and
increase isolation magnitude. The ultra low capacitance
of the PIN diodes makes it ideal for usage in low loss
and high isolation microwave and millimeter wave switch
designs through 70 GHz. The lower series resistance of
the AlGaAs diodes reduces the total insertion loss and
distortion of the device. AlGaAs PIN switches are used
in applications such as switching arrays for radar
systems, radiometers, and other multi-function
components.
1
Absolute Maximum Ratings @ T
AMB
= +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+150°C
Maximum combined operating conditions for RF Power, D.C. bias,
and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85°C.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
Rev. V6
Electrical Specifications @ T
AMB
= 25°C
(On-wafer measurements)
Parameter
Insertion Loss
Ports
J1 - J2
Bias Conditions
-5V at J1 and B
Frequency Typical
50GHz
1.2dB
Isolation
J1 - J2(Terminated by 50Ω)
+10mA at J1 and B
50GHz
30dB
Input return Loss
J1- J2
-5V at J1 and B
50GHz
15dB
Output Return Loss
Output Return Loss
(Isolation)
Switching Speed
(10% - 90% RF Voltage)
Notes:
J2- J1
-5V at J1 and B
50GHz
18dB
J2(Terminated by 50Ω)
+10mA at J1 and B
±5V PIN TTL Driver
1MHz Repetition Frequency.
50GHz
18dB
J1 - J2
10GHz
10nS
1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL
compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and
a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times.
2. Bias nodes, J1 and B may be connected together
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
Rev. V6
Typical RF Performance (Probed on Wafer)
Isolation
Isol (dB)
Freq. (GHz)
Input Return Loss
Loss (dB)
Freq. (GHz)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
Rev. V6
Typical RF Performance (Probed on wafer)
Output Return Loss (Insertion Loss State)
Loss (dB)
Freq. (GHz)
Output Return Loss (Isolation Loss State)
Loss (dB)
Freq. (GHz)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
Rev. V6
Operation of the MA4AGSW1A Switch
An external bias network and D.C return is required for successful operation of the MA4AGSW1A absorptive
SPST AlGaAs PIN diode switch. The backside area of the die is the RF and D.C. ground return plane. In the
low loss state, the series diode is forward biased with negative current at D.C. Bias B1 and the match diode is
biased at 0V at D.C. Bias B. In the isolated state, the shunt diode and the match diode are both forward biased
at D.C. Bias B1 and D.C. Bias B (series diode becomes reverse biased ). This isolation state bias results in a
good 50Ω match into Port J2. Typical driver connections are shown in Table I below. The bias network design
shown in the schematic should yield > 30dB RF to DC isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component
bias network shown below. Refer to datasheets for the
MA4BN1840-1
and
MA4BN1840-2
for additional
information.
The lowest insertion loss, P1dB, IP
3
, and switching speed is achieved by applying a minimum value of | -2V |
at D.C. Bias node, which is achievable with a standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW1A Schematic with Bias Network for 10-30GHz
DC Bias
B1
MA4AGSW1A
DC Ground
Return
10 pF
4.7 nH
DC and RF ground re-
4.7 nH
10 pF
10 pF
Matching
MA4AGSW1A
Notes:
1. D.C. Bias 1 and D.C. Bias B nodes can be connected together.
2. Diode junction forward bias voltage, Δ Vf @ 10 mA ~ 1.35 V @ + 25° C.
TYPICAL DRIVER CONNECTIONS
J1-J2 Low Loss : Good VSWR at J1 & J2 J1-J2 Isolation : Good VSWR at J2
5
D.C. Bias 1 = -10mA
D.C. Bias B = 0V
D.C. Bias 1 = +10mA
D.C. Bias B = +10mA
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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