Dissipation bias controller that provides proper gate
voltage and pulsed drain voltage biasing for a device
under test (DUT).
Applicable DUT’s include
depletion-mode GaN (Gallium Nitride) or GaAs
(Gallium Arsenide) power amplifiers or HEMT
devices.
The module also provides bias sequencing so that
pulsed drain voltage cannot be applied to a DUT
unless the negative gate bias voltage is present.
The applications section of this datasheet will show
how the module can be implemented for the
following two applications:
Application Option 1: Fixed negative gate
biasing with pulsed drain biasing.
Application Option 2: Pulsed negative gate
biasing with pulsed drain biasing.
NC GND
Pin Configuration
1
Pin No.
1
2,6,8,10
3
4
5
7,13,14
9
11
12
Label
GFB
NC
GCO
GCI
VGS
GND
SWG
P4V
ENS
Function
Gate Voltage (-) Feedback
No Connection
Gate Voltage (-) Control Output
Gate Voltage (-) Control Input
Gate (-) Supply Voltage
Ground
Driver Output to MOS Switch Gate
+5 V V
CC
Input
MOS Switch Enable TTL
1. This Configuration is for Fixed Gate Bias. Unused package
pins must be left open and not connected to ground.
Both of these application options will recommend the
external circuitry and p-Channel Power MOSFET.
The MABC-001000-DP000L module can also be
installed onto an MABC-001000-PB2PPR evaluation
board for evaluation, test, and characterization
purposes.
Ordering Information
Part Number
MABC-001000-DPS00L
MABC-001000-DPS0TL
MABC-001000-PB2PPR
Packaging
Tray
Tape & Reel
2
Gate and Drain Pulsing
Evaluation Board
3
* Restrictions on Hazardous Substances,
European Union Directive 2011/65/EU.
1
2. Reference Application Note M513 for reel size information.
3. Specify eval. board configuration when ordering: Application
Option 1 or 2. See Applications Section for option details.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Electrical Characteristics: T
A
= 25°C
Symbol
V
CC
I
CC
V
GS
I
GS
V
ENL
V
ENH
I
EN
V
GTH
V
DTH
V
GC
V
GCR
I
GC
R
OFF
R
ON
I
ON
Parameter
Supply Voltage, Positive
Supply Current, Positive
Supply Voltage, Negative
Supply Current, Negative
Input Voltage, Logic 0, Pulse Enable
Input Voltage, Logic 1, Pulse Enable
Input Current, Pulse Enable
Input, Gate Feedback Threshold to V
GS
Input, Drain Feedback Threshold
Output Voltage, Pulsed/Fixed Gate
Output Voltage, Pulsed/Fixed Gate Ripple
Output Gate Current, Peak
Output Drive, Open Drain, OFF State
Output Drive, Open Drain, ON State
Output Drive, Current, ON State
V
DS
= 50 V
Temp. = +85°C
Conditions
Min
4.3
-
-8
-
0
2
-
-
-
-8
-
-
-
-
-
Typ
5
13
-6
-3
0
3.3
40
2.7
65%
SWG
-3.5
50
50
4M
1.2
100
Max
5.5
-
0
-
0.3
4.3
-
-
-
0
-
-
-
-
200
Unit
V
mA
V
mA
V
V
uA
V
V
V
mVp-p
mA
Ω
Ω
mA
Rev. V1
Absolute Maximum Ratings
4,5
Parameter
Supply (+) Voltage, V
CC
Supply (-) Voltage, V
GS
Logic Voltage, ENS, GSE
Analog (-) Voltage, GCI, GFB
Switch Driver Voltage, SWG
Switch Driver Sink Current, SWG
Lead Soldering Temp (10 s)
Operating Temperature
Storage Temperature
Absolute Maximum
+4.3 V to +5.5 V
-10 V to 0 V
-0.3 V to +4.5 V
-10 V to 0 V
0 V to +60 V
-200 mA
+260°C
-40°C to +85°C
-65°C to +150°C
Recommended Operating Conditions
Parameter
Supply (+) Voltage, V
CC
Supply (-) Voltage, V
GS
Logic Voltage, ENS, GSE
Analog (-) Voltage, GCI, GFB
Switch Driver Sink Current, SWG
Operating Temperature
Typical
+4.8 V to +5 V
-8 V to -2 V
0 V to +4.3 V
-8 V to -2 V
-1 mA to -200 mA
-40°C to +85°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6.
MACOM does not recommend sustained operation near these
survivability limits.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
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MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Timing Characteristics: T
A
= 25°C
Symbol Parameter
t
D1
t
D3
t
RISE1
t
FALL1
t
D1
t
D3
t
RISE1
t
FALL1
t
D2
t
D4
t
RISE2
t
FALL2
Open Drain ON Propagation Delay
7
Open Drain OFF Propagation Delay
7
Open Drain Rise Time
8
Open Drain Fall Time
8
MOS Switch ON Propagation Delay
7
MOS Switch OFF Propagation Delay
7
MOS Switch Rise Time
8
MOS Switch Fall Time
8
Gate Bias ON Propagation Delay
7
Gate Bias OFF Propagation Delay
7
Gate Bias Rise Time
8
Gate Bias Fall Time
8
R
LOAD
= 1200 Ω
V
DD
= 50 V
I
LOAD
= 42 mA avg.
MOS C
ISS
= 760 pF
R
DS,ON
= 205 mΩ
Conditions
R
PULL-UP
= 700 Ω
V
DD
= 50 V
I
R
= 71 mA avg.
Switch Disconnected
Min
-
-
-
-
-
-
-
-
-
-
-
-
Typ
100
70
116
58
200
1100
126
820
156
148
55
44
Max
150
100
150
100
-
-
-
-
200
200
100
100
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev. V1
7. Propagation delay is measured from 90% of the TTL signal to 10% of the signal of interest.
8. Rise and fall times are measured between 10% and 90% of the steady state signal.
Timing Diagrams
+5V
Vcc
ENS
TTL
SWG
VOD
+5V
0
+50V
90%
+50V
90%
EXTERNAL +5V TO
ENABLE LOGIC
PULSE ENABLE FOR
GATE & DRAIN SWITCH
OPEN DRAIN OUTPUT
VDS
VDD (Q1)
9
0
10%
90%
0
-3V
90%
10%
MOSFET SWITCH OUTPUT
GCO
VGS
-8V
10%
10%
PULSED GATE OUTPUT
RF OUTPUT
RF
RF
t
D1
t
RISE1
t
D2
t
RISE2
t
D4
t
FALL2
t
D3
t
FALL1
3
9. Q1 refers to an external p-Channel MOSFET that pulses the drain of the DUT. See Applications Section for more information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
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MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Applications Section
Functional Description
The MABC-001000-DPS00L GaN Bias Controller/
Sequencer Module circuitry provides proper
sequencing and generation of the gate voltage and
pulsed drain voltage for a device under test (DUT).
Reference the Product View and Pin Configuration
table on page 1. The basic functions of the circuits
within the module are described as follows:
Overhead Voltages for the Circuits within the
MABC-001000-DPS00L Module
○
Pin 11 (P4V) is the +5V Vcc Input that
supplies the positive voltage for the circuits
within the module.
Pin 5 (VGS) is the Gate (-) Supply Voltage
that is also used to supply the negative
voltage for the circuits within the module.
Pin 9 (SWG) MOS Switch Driver Output
○
An N-Channel MOSFET develops the
pulsed signal (SWG) to drive the
resistive divider network for the gate of an
external p-Channel HEXFET as shown in
Figure 1 on page 5. The input signal for the
internal MOSFET is provided by the output
from the sequencing circuits.
Rev. V1
Sequencing Circuits
○
A voltage comparator circuit senses if the
negative gate voltage is present as an input
on Pin 1 (GFB) - Gate Voltage (-) Feedback.
A logic circuit provides the switched input
enable signal for the N-Channel MOSFET.
The following 3 signals must be at correct
levels to generate the enable logic
signal:
Pin 12 (ENS) MOS Switch Enable TTL
Negative gate voltage (GFB) is present
P4V voltage is present.
○
○
Negative Gate Voltage for the Device Under
Test (DUT)
○
A voltage follower op-amp circuit provides a
low impedance output to Pin 3 (GCO) Gate
Voltage (-) Control Output. Pin 3 (GCO)
output is connected to the gate terminal of a
DUT as shown in Figure 1 on page 5.
The reference voltage for the voltage
follower is provided by the Pin 4 (GCI) Gate
Voltage (-) Analog Input. This input
reference voltage is developed by an
external potentiometer/ resistive divider
circuit as shown in Figure 1 on page 5. It is
recommended to use the -8 V to -3 V
voltage that is also applied to Pin 5 (VGS).
Reference: The external potentiometer is
adjusted to set the gate voltage Pin 3 (GCO)
to the DUT. Alternative voltage inputs such
as a temperature compensation circuit or a
Digital-to-Analog (DAC) converter could also
be supplied to Pin 4 (GCI).
○
○
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Applications Section
Module Layout Guidelines
Reference the Product View, Pin Configuration
Table on page 1, and the Recommended Landing
Pattern on page 7.
The following recommendations should be followed
when the MABC-001000-DPS00L module is used to
bias a high-power RF device or amplifier. The input
and output locations were determined so that the
layout and signal routing could be optimized when
interfacing with a high-power amplifier
assembly.
The negative gate voltage input and outputs are
located on the left side of the module and should
be located as close as possible to the gate bias
pads
on
the
high - power
am plif ier
assembly.
The positive pulsed voltages are located on the
right side of the module and should be located
as close as possible to the external MOSFET
switch. The MOSFET switch drain should be
located as close as possible to the drain bias
pads on the high-power amplifier assembly. The
charge storage capacitors should be
located as close as possible to the MOSFET
switch source terminal pads.
The module ground pads are located at Pins 7,
13, and 14.
Route all signal lines and ground returns to be
as short as possible and implement a ground
plane on the back of the printed wiring board
(PWB) if that option is available to the
designer. Following these layout criteria will
minimize circuit parasitics that degrade the
performance of the pulsed signal.
Rev. V1
Application Option 1:
Fixed Gate with Pulsed Drain Biasing
Figure 1 shows a block diagram of the
MABC-001000-DPS00L module with the
recommended external components to support this
application option. See Table 1 for component
recommendations and values.
+5 V
+50 V
R4
R1
VR1
1
3
4
R5
MABC-001000-
DPS00L
6
C
STORAGE
11
9
-8 V
TTL
R2
R3
Q1
5
RF
IN
C
IN
DUT
C
OUT
RF
OUT
Figure 1. Fixed Gate/Pulsed Drain Biasing
Part
R1
R2,R3
R4,R5
VR1
Q1
Value
2.7 kΩ
1.02
kΩ
402 Ω
10
kΩ
P-Channel
MOSFET
MFG
Panasonic
Vishay
Vishay
Bourns
IR
MFG P/N
ERJ-2GEJ272X
CRCW25121K02FKEGHP
CRCW2512402RFKEG
3224W-1-103E
IRF5210SPBF
Table 1. Recommended Parts List for Fixed
Gate/Pulsed Drain Biasing
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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