5,268,310. This process allows the incorporation of
silicon pedestals that form series and shunt diodes
or vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
circuit elements, this combination of silicon and
glass gives HMIC devices low loss and high isolation
performance with exceptional repeatability through
low millimeter frequencies.
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large
gold bond pads help facilitate connection of low
inductance ribbons. The gold metallization on the
backside of the chip allows for attachment via 80/20
(gold/tin) solder or conductive silver epoxy.
MA4SW310B-1 (SP3T)
Ordering Information
Part Number
MA4SW210B-1
MA4SW310B-1
Package
Gel Pack
Gel Pack
1. Yellow areas indicate ribbon/wire bonding pads
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4SWx10B-1 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Electrical Specifications:
T
A
= 25°C, 20 mA
MA4SW210B-1 (SPDT)
Parameter
Insertion Loss
Rev. V6
Test Conditions
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
—
Units
dB
Min.
—
Typ.
1.5
0.7
0.9
1.2
60
50
45
40
14
15
15
13
50
Max.
1.8
1.0
1.2
1.8
Isolation
dB
55
47
40
36
—
Input Return Loss
dB
—
—
Switching Speed
2
ns
—
—
MA4SW310B-1 (SP3T)
Parameter
Insertion Loss
Test Conditions
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
—
Units
dB
Min.
—
Typ.
1.6
0.8
1.0
1.3
59
50
45
40
14
15
16
14
50
Max.
2.0
1.1
1.3
1.9
Isolation
dB
54
47
40
36
—
Input Return Loss
dB
—
—
Switching Speed
2
ns
—
—
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, I
C
= C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4SWx10B-1 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Absolute Maximum Ratings
3,4,5
Parameter
RF CW Incident Power
Reverse Voltage
Bias Current per Port
Operating Temperature
Storage Temperature
Junction Temperature
Absolute Maximum
+33 dBm
-50 V
±50 mA @ +25°C
-65°C to +125°C
-65°C to +150°C
+175°C
Rev. V6
Cleanliness
The chips should be handled in a clean environment
free of dust and organic contamination.
Wire / Ribbon Bonding
Thermo compression wedge bonding using 0.003” x
0.00025” ribbon or 0.001” diameter gold wire is
recommended. A work stage temperature of
150°C - 200°C, tool tip temperature of 120°C - 150°
and a downward force of 18 to 22 grams should be
used. If ultrasonic energy is necessary, it should be
adjusted to the minimum level required to achieve a
good bond. Excessive power or force will fracture
the silicon beneath the bond pad causing it to lift.
RF bond wires and ribbons should be kept as short
as possible for optimum RF performance.
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near these
survivability limits.
5. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
Chip Mounting
HMIC switches have Ti-Pt-Au backside metallization
and can be mounted using a gold-tin eutectic solder
or conductive epoxy. Mounting surface must be free
of contamination and flat.
Handling Procedures
Please observe the following precautions to avoid
damage:
Eutectic Die Attachment
An 80/20, gold-tin, eutectic solder is recommended.
Adjust the work surface temperature to 255
o
C and
the tool tip temperature to 265
o
C. After placing the
chip onto the circuit board re-flow the solder by
applying hot forming gas (95/5 Ni/H) to the top
surface of the chip. Temperature should be
approximately 290
o
C and not exceed 320
o
C for
more than 20 seconds. Typically no more than three
seconds is necessary for attachment. Solders rich in
tin should be avoided
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
Epoxy Die Attachment
A minimum amount of epoxy, 1 - 2 mils thick, should
be used to attach chip. A thin epoxy fillet should be
visible around the outer perimeter of the chip after
placement. Epoxy cure time is typically 1 hour at
150°C.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4SWx10B-1 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Typical RF Performance at T
AMB
= +25°C, 20 mA Bias Current
ISOLATION vs FREQUENCY
MA4SW210B-1
Rev. V6
ISOLATION vs FREQUENCY
MA4SW310B-1
0
ISOLATION, dB
0
2
4
6
8 10 12 14 16 18 20 22 24 26
ISOLATION, dB
0
-10
-20
-30
-40
-50
-60
-70
-10
-20
-30
-40
-50
-60
-70
0
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
FREQUENCY, GHz
INSERTION LOSS vs FREQUENCY
MA4SW210-B1
INSERTION LOSS vs FREQUENCY
MA4SW310B-1
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0
2
4
6
8 10 12 14 16 18 20 22 24 26
INSERTION LOSS, dB
2
0
-2
-4
-6
-8
0
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
INSERTION LOSS, dB
FREQUENCY, GHz
RETURN LOSS vs FREQUENCY
MA4SW210B-1
0
RETURN LOSS vs FREQUENCY
MA4SW310B-1
0
RETURN LOSS, dB
-5
-10
-15
-20
-25
-30
-35
-40
0
2
4
6
8
10
12
14
16
18
20
22
24
26
RETURN LOSS, dB
-5
-10
-15
-20
-25
-30
-35
-40
0
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
4
FREQUENCY, GHz
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4SWx10B-1 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V6
MA4SW210B-1 Series Diode Junction Temperature vs. Incident Power at 8 GHz
140
5 mA
120
Tjunction ( Deg. C )
100
10 mA
Series Diode_5mA
80
Series Diode_10mA
20 mA
Series Diode_20mA
60
40
20
10.00
15.00
20.00
25.00
30.00
35.00
C.W. Incident Power ( dBm )
MA4SW210B-1 Compression Power vs. Incident Power at 8 GHz
0.80
5 mA
0.70
Series Diode_5mA
Series Diode_10mA
0.60
Series Diode_20mA
Compression Power ( dB )
0.50
10 mA
0.40
20 mA
0.30
0.20
0.10
0.00
10.00
15.00
20.00
25.00
30.00
35.00
C.W. Incident Power ( dBm )
6. The MA4SW310B-1 contains the same PIN diodes and will have similar performance.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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