电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MASW-000834_13560T_15

产品描述HMIC PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications
文件大小726KB,共14页
制造商MACOM
官网地址http://www.macom.com
下载文档 全文预览

MASW-000834_13560T_15概述

HMIC PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications

文档预览

下载PDF文档
MASW-000834-13560T
HMIC
TM
PIN Diode SPDT 50 Watt Switch for
0.05 - 6.0 GHz Higher Power Applications
Features
Exceptional Broadband Performance, 0.05 - 6.0 GHz
Low Loss: T
X
= 0.33 dB @ 2010 MHz, 5V / 20mA
Low Loss:
T
X
= 0.38 dB @ 3.5 GHz, 5V / 20mA
High Isolation: Rx = 44dB @ 2010 MHz, 20mA / 5V
High Isolation:
Rx = 36dB @ 3.5 GHz, 20mA / 5V
High T
X
RF Input Power = 50 W C.W. @ 2010MHz
High Tx RF Input Peak Power > 1000 W
Suitable for Very High Power TD-SCDMA & WiMAX
Applications
Surface Mount 4mm PQFN Package, RoHS* Compliant
Rev. V8
Functional Diagram (TOP VIEW)
(Pin 16)
N/C
(Pin 1)
GND
T
X
GND
GND
ANT
GND
N/C
N/C
GND
R
X
GND
N/C
N/C
N/C
DC2
Description and Applications
The MASW-000834-13560T is a SPDT Broadband, high
linearity, common anode, PIN diode T/R switch for 0.05 -
6.0 GHz applications, including WiMAX & WiFi. The
device is provided in industry standard 4mm PQFN plastic
packaging. This device incorporates a PIN diode die
fabricated with M/A-COM Technology Solutions patented
Silicon-Glass HMIC
TM
process. This chip features two
silicon pedestals embedded in a low loss, low dispersion
glass. The diodes are formed on the top of each pedestal.
The topside is fully encapsulated with silicon nitride and
has an additional polymer passivation layer. These
polymer protective coatings prevent damage and
contamination during handling and assembly.
This compact 4mm PQFN package, SPDT switch offers
wideband 0.05 - 6.0 GHz performance with excellent
isolation to loss ratio for both T
X
and R
X
states. The PIN
diode provides 50 W typical C.W. power handling and 65
dBm IIP3 at 2010 MHz
for
maximum
switch
performance.
Pin Configuration:
(Center Metal Area is RF, D.C., and Thermal Ground)
Pin
1
2
3
4
5
6
7
8
Function
GND
ANT
GND
N/C
N/C
GND
RX
GND
Pin
9
10
11
12
13
14
15
16
Function
DC2
N/C
N/C
N/C
GND
TX
GND
N/C
Absolute Maximum Ratings
1,2
@ T
A
= +25 °C (unless otherwise specified)
Parameter
Forward Current
Reverse Voltage ( RF & D.C. )
Operating Temperature
Storage Temperature
Junction Temperature
T
X
Incident C.W. Power
T
X
Peak Incident Power
Absolute Maximum
| 100 mA |
| -200 V |
-40 °C to +85 °C
-55 °C to +150 °C
+175 °C
50W (47 dBm)
@ 2010MHz
3
Ordering Information
Part Number
MASW-000834-13560T
MASW-000834-001SMB
MADR-008851-0001TB
Package
Tape and Reel
Sample Board
Sample Board with recommended
external Driver & MASW-000834-
13560T Switch
>300 W, 5us, 1% duty
1. Exceeding these limits may cause permanent damage.
2. M/A-COM Technology Solutions does not recommend sustained operation near
these survivability limits.
3. Baseplate Temperature must be controlled to a constant +25°C. See page 7 for
derating curve.
Static Sensitivity
These devices are rated Class 1B Human Body.
Proper ESD control techniques should be used
when handling these devices.
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 879  580  2436  2003  921  18  12  50  41  19 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved