NJU7381A
LOW VOLTAGE OPERATION DUAL H BRIDGE DRIVER
■
GENERAL DESCRIPTION
The NJU7381A is a dual H-bridge driver IC that features low
voltage operation and low quiescent current.
The control method is 2 logic Inputs (2-IN) that includes
standby mode.
The independent comparator circuit can be used for position
sensing signal processing and the others.
Small package makes the NJU7381A suitable for small stepper
motor and DC motor, such as portable applications.
■
PACKAGE OUTLINE
NJU7381AMJE
(EQFN16-JE)
NJU7381AV
(SSOP16)
■
FEATURES
Supply Voltage
Output Current
: V
DD
=1.8V to 5.5V
: I
O
=200mA (
Continuous)
I
O
=400mA (Peak)
Output ON Resistance : R
O(H+L)
=1.25Ω typ. at V
DD
=3.3V
R
O(H+L)
=1.95Ω typ. at V
DD
=1.8V
Low Quiescent Current : 60µA typ. at V
DD
=3.3V
2 Logic Inputs Control (2-IN)
Stand-by Function (At no-input signal)
Built-in Comparator Circuit
Protection Circuit
: Thermal Shutdown Circuit (TSD)
Package Outline
: EQFN16-JE, SSOP16
■
BLOCK DIAGRAM
VDD
INA1
OUTA1
INA2
Control
Logic
INB1
OUTA2
Stepper
Motor
M
INB2
OUTB1
TSD
GND
OUTB2
COMP +
COMP
COMP OUT
-
Ver.2015-04-06
-1-
NJU7381A
■
PIN CONFIGURATION
EQFN16-JE
12 11 10 9
13
14
15
16
1
2
3
4
8
7
6
5
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
SSOP16
Top View
Top View
1
16
15
14
13
2
3
4
5
SUB
6
7
8
12 11 10 9
Bottom View
■
PIN DESCRIPTION
PIN No.
EQFN16 SSOP16
1
2
2
3
3,11
4,12
4
5
5
6
6
7
7,15
8,16
8
9
9
11
10
10
12
13
14
16
SUB
13
14
15
1
-
PIN NAME
INB1
INB2
VDD
INA2
INA1
OUTA2
GND
OUTA1
COMP OUT
NC
COMP+
COMP-
OUTB1
OUTB2
SUB
FUNCTION
Bch Logic Input Pin 1
Bch Logic Input Pin 2
Power Supply Pin
Ach Logic Input Pin 2
Ach Logic Input Pin 1
Ach Output Pin 2
Ground Pin
Ach Output Pin 1
Comparator Output Pin
No Connection
Comparator Non-inverted
Input Pin
Comparator Inverted
Input Pin
Bch Output Pin 1
Bch Output Pin 2
Back Side Thermal PAD
(SUB)
NOTES
-
-
Both pins must be connected together externally.
-
-
-
Both pins must be connected together externally.
-
When not using, it should be set to open.
Not Internally Connected
When not using, it should be connected to VDD.
When not using, it should be connected to GND.
-
-
The PAD is connected with the internal VDD.
It must be set to open or connected to VDD.
-2-
Ver.2015-04-06
NJU7381A
■
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Logic Input Voltage
SYMBOL
V
DD
V
ID
(Ta=25ºC)
RATINGS
UNIT
NOTES
7
V
-
-0.3 to V
DD
+0.3
V
-
400
mA
Per channel
Motor Output Current (Peak)
I
OPEAK
800
mA
Ach & Bch parallel connection
Comparator Output Current
I
CO
10
mA
-
Comparator Output Voltage
V
CO
7
V
-
Operating Ambient Temperature
Topr
-40 to + 85
ºC
-
Junction Temperature
Tj
-40 to +150
ºC
-
Storage Temperature
Tstg
-50 to +150
ºC
-
720
2 Layers on PCB (*1)
Power Dissipation
P
D
mW
(EQFN16-JE)
1800
4 Layers on PCB (*2)
300
Device itself
Power Dissipation
P
D
610
mW
2 Layers on PCB (*3)
(SSOP16)
780
4 Layers on PCB (*4)
*1: Mounted on glass epoxy board based on EIA/JEDEC. (101.5 114.5 1.6mm, FR-4, 2Layers, connected exposed PAD)
*2: Mounted on glass epoxy board on EIA/JEDEC. (101.5 114.5 1.6mm, FR-4, 4Layers, Inner Cu area : 99.5 99.5mm,
In addition thermal via holes, connected exposed PAD)
*3: Mounted on glass epoxy board based on EIA/JEDEC. (76.2 114.3 1.6mm, FR-4, 2Layers)
*4: Mounted on glass epoxy board based on EIA/JEDEC. (76.2 114.3 1.6mm, FR-4, 4Layers, Inner Cu area : 74.2 74.2mm)
■
RECOMMENDED OPERATING CONDITIONS
(V
DD
=3.3V, Ta=25ºC)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply Voltage 1
V
DD1
Not using comparator block (*5)
1.8
-
5.5
V
Supply Voltage 2
V
DD1
Using comparator block (*5)
2.0
-
5.5
V
Per channel
-
-
200
mA
Motor Output Current (Continuous)
I
O
Ach & Bch parallel connection
-
-
400
mA
*5: Output voltage may not be provided enough depending on output current level, please review output ON resistance spec.
Ver.2015-04-06
-3-
NJU7381A
■
ELECTRICAL CHARACTERISTICS
PARAMETER
■
GENERAL
Quiescent Current 1
Quiescent Current 2
Quiescent Current at Stand-by
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
■
LOGIC BLOCK
H Level Input Voltage 1
H Level Input Voltage 2
L Level Input Voltage 1
L Level Input Voltage 2
Input Hysteresis Width
H Level Input Current
L Level Input Current
Input Pull Down Resistance
Input Pulse Width
■
DRIVER BLOCK
High Side Output ON Resistance 1
High Side Output ON Resistance 2
High Side Output ON Resistance 3
Low Side Output ON Resistance 1
Low Side Output ON Resistance 2
Low Side Output ON Resistance 3
Parallel Connection High Side
Output ON Resistance 1
Parallel Connection High Side
Output ON Resistance 2
Parallel Connection High Side
Output ON Resistance 3
Parallel Connection Low Side
Output ON Resistance 1
Parallel Connection Low Side
Output ON Resistance 2
Parallel Connection Low Side
Output ON Resistance 3
R
ONH
Temperature Coefficient
R
ONL
Temperature Coefficient
High Side Reverse Voltage
Low Side Reverse Voltage
High Side Leak Current
Low Side Leak Current
Output Turn ON Time
Output Turn OFF Time
Dead Time
■
COMPARATOR BLOCK
Input Offset Voltage
Input Bias Current
Common Mode
Input Voltage Range
Output Voltage
Output Leak Current
SYMBOL
I
DD1
I
DD2
I
STB
T
TSD
T
HYS
V
IH1
V
IH2
V
IL1
V
IL2
V
IHYS
I
IH
I
IL
R
IN
tp
R
ONH1
R
ONH2
R
ONH3
R
ONL1
R
ONL2
R
ONL3
R
PONH1
R
PONH2
R
PONH3
R
PONL1
R
PONL2
R
PONL3
ΔR
ONH
/ΔTj
ΔR
ONL
/ΔTj
TEST CONDITIONS
MIN.
-
-
-
-
-
2.4
1.4
0
0
-
22
-
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
200
5
195
-12
-
0
(V
DD
=3.3V, Ta=25ºC)
TYP.
MAX.
UNIT
60
50
1
190
40
-
-
-
-
0.2
33
-
100
-
0.75
1.0
1.2
0.5
0.65
0.75
0.38
0.5
0.6
0.25
0.33
0.38
4.0
3.0
0.85
0.75
-
-
400
40
360
-
1
-
0.1
-
120
100
3
-
-
V
DD
V
DD
0.8
0.4
-
55
200
150
-
1.0
1.35
1.6
0.7
0.9
1.05
0.5
0.68
0.8
0.35
0.45
0.53
-
-
1.0
0.9
1
1
600
80
520
+12
-
V
DD
-0.5
-
1
µA
µA
µA
ºC
ºC
V
V
V
V
V
µA
nA
kΩ
µs
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
mΩ/ºC
mΩ/ºC
V
V
µA
µA
ns
ns
ns
mV
pA
V
V
µA
V
DD
=1.8V
V
DD
=1.8V
V
DD
=1.8V
Per 1 Input
Per 1 Input
V
ORH
V
ORL
I
OLEAKH
I
OLEAKL
t
ON
t
OFF
td
V
IO
I
IB
V
ICM
Vsat
I
COLEAK
I
O
=200mA
V
DD
=2.1V, I
O
=200mA
V
DD
=1.8V, I
O
=200mA
I
O
=200mA
V
DD
=2.1V, I
O
=200mA
V
DD
=1.8V, I
O
=200mA
Ach & Bch Parallel Connection,
I
O
=400mA
Ach & Bch Parallel Connection,
V
DD
=2.1V, I
O
=400mA
Ach & Bch Parallel Connection,
V
DD
=1.8V, I
O
=400mA
Ach & Bch Parallel Connection,
I
O
=400mA
Ach & Bch Parallel Connection,
V
DD
=2.1V, I
O
=400mA
Ach & Bch Parallel Connection,
V
DD
=1.8V, I
O
=400mA
Tj=40~125ºC, I
O
=200mA
Tj=40~125ºC, I
O
=200mA
I
O
=-200mA
I
O
=-200mA
V
DD
=7.0V
V
DD
=7.0V
RL=10kΩ
V
CO
=5.5V
-
-
-4-
Ver.2015-04-06
NJU7381A
■
THERMAL RESISTANCE
EQFN16-JE
PARAMETER
Junction - Ambient
Thermal Resistance 1
Junction – Case Surface
Thermal Resistance 1
Junction - Ambient
Thermal Resistance 2
Junction – Case Surface
Thermal Resistance 2
SYMBOL
ja_1
jt_1
ja_2
jt_2
TEST CONDITIONS
Mounted on glass epoxy board based on
EIA/JEDEC.
(101.5 114.5 1.6mm, FR-4, 2Layers,
connected exposed PAD)
Mounted on glass epoxy board based on
EIA/JEDEC.
(101.5 114.5 1.6mm, FR-4, 4Layers,
Inner Cu area : 99.5 99.5mm, In addition
thermal via holes, connected exposed PAD)
TEST CONDITIONS
Mounted on glass epoxy board based on
EIA/JEDEC.
(76.2 114.3 1.6mm, FR-4, 2Layers)
Mounted on glass epoxy board based on
EIA/JEDEC.
(76.2 114.3 1.6mm, FR-4, 4Layers,
Inner Cu area : 74.2 74.2mm)
MIN.
-
-
-
-
TYP.
-
21
-
11
MAX.
173
-
69
-
UNIT
ºC/W
ºC/W
ºC/W
ºC/W
SSOP16
PARAMETER
Junction - Ambient
Thermal Resistance 1
Junction – Case Surface
Thermal Resistance 1
Junction - Ambient
Thermal Resistance 2
Junction – Case Surface
Thermal Resistance 2
SYMBOL
ja_1
jt_1
ja_2
MIN.
-
-
-
-
TYP.
-
35
-
26
MAX.
204
-
160
-
UNIT
ºC/W
ºC/W
ºC/W
ºC/W
jt_2
■
POWER DISSIPATION vs. AMBIENT TEMPERATURE
NJU7381AMJE P
D
vs. Ta
(Topr=-40 to +85ºC, Tj=150ºC)
2500
Power Dissipation P
D
(mW)
2000
Mounted on 4-Layer Board
(FR4 101.5 114.5 1.6mm,
Inner Cu area: 99.5 99.5mm, In addition
thermal via holes, connected exposed PAD)
936mW
1500
1000
500
Mounted on 2-Layer Board
(FR4 101.5 114.5 1.6mm,
connected exposed PAD)
374mW
0
-50
-25
0
25
50
75
100
125
Ambient Temperature Ta(ºC)
NJU7381AV P
D
vs. Ta
(Topr=-40 to 85ºC, Tj=150ºC)
1000
Mounted on 4-Layer Board
(FR4 76.2 114.3 1.6mm,
Inner Cu area: 74.2 74.2mm)
Mounted on 2-Layer Board
(FR4 76.2 114.3 1.6mm)
Power Dissipation P
D
(mW)
800
600
400
405mW
Device itself
317mW
156mW
200
0
-50
-25
0
25
50
75
100
125
Ambient Temperature Ta(ºC)
Ver.2015-04-06
-5-
测试/测量
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