MUSES01
High Quality Audio , J-FET Input,
Dual Operational Amplifier
The
MUSES01
is a dual J-FET input high quality audio operational amplifier, which is optimized for high-end audio and
professional audio applications with advanced circuitry and layout, unique material and assembled technology by
skilled-craftwork.
It is the best for audio preamplifiers, active filters, and line amplifiers with excellent sound.
FEATURES
●Operating
Voltage
●Output
noise
●Input
Offset Voltage
●Input
Bias Current
●Voltage
Gain
●Slew
Rate
●Bipolar
Technology
●Package
Outline
Vopr=9V to
16V
9.5nV/√Hz at f=1kHz
0.8mV typ. 5mV max.
200pA typ. 800pA max. at Ta=25°C
105dB typ.
12V/s typ.
DIP8
PIN CONFIGURATION
PIN FUNCTION
1
2
3
4
8
PACKAGE OUTLINE
-+
+ -
7
6
5
1. A OUTPUT
2. A -INPUT
3. A +INPUT
4. V-
5. B +INPUT
6. B -INPUT
7. B OUTPUT
8.V+
MUSES01
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
Ver.2015-04-13
-1-
MUSES01
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Supply Voltage
Common Mode Input Voltage
Differential Input Voltage
Power Dissipation
Output Current
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
+
/V
-
V
ICM
V
ID
P
D
I
O
T
opr
T
stg
RATING
18
15
(Note1)
30
910
25
-40 to +85
-50 to +150
UNIT
V
V
V
mW
mA
°C
°C
(Note1) For supply Voltages less than
15
V, the maximum input voltage is equal to the Supply Voltage.
RECOMMENDED OPERATING CONDITION
(Ta=25°C)
PARAMETER
Supply Voltage
SYMBOL
V
+
/V
-
TEST CONDITION
-
MIN.
9
TYP.
-
MAX.
16
UNIT
V
ELECTRIC CHARACTERISTICS
DC CHARACTERISTICS (V
+
/V
-
=15V, Ta=25°C unless otherwise specified)
PARAMETER
Operating Current
Input Offset Voltage
Input Bias Current
Input Offset Current
Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Max Output Voltage 1
Max Output Voltage 2
Input Common Mode Voltage
Range
SYMBOL
I
cc
V
IO
I
B
I
IO
A
V
CMR
SVR
V
OM1
V
OM2
V
ICM
TEST CONDITION
No Signal, R
L
=∞
Rs10k (Note2)
(Note2, 3)
(Note2, 3)
R
L
≥2kΩ,
V
o
=10V
V
ICM
=8V (Note4)
V
+
/V
-
=9.0 to
16.0V
(Note2, 5)
R
L
=10kΩ
R
L
=2kΩ
CMR≥60dB
MIN.
-
-
-
-
90
60
70
12
10
8
TYP.
8.5
0.8
200
100
105
75
83
13.5
12.5
9.5
MAX.
12.0
5.0
800
400
-
-
-
-
-
-
UNIT
mA
mV
pA
pA
dB
dB
dB
V
V
V
(Note2) Measured at VICM=0V
(Note3) Written by the absolute rate.
(Note4) CMR is calculated by specified change in offset voltage. (VICM=0V to +8V and VICM=0V to
−8V)
(Note5) SVR is calculated by specified change in offset voltage. (V+/V−=±9V to ±16V)
-2-
Ver.2015-04-13
MUSES01
AC CHARACTERISTICS (V
+
/V
-
=15V, Ta=25°C unless otherwise specified)
PARAMETER
Gain Bandwidth Product
Unity Gain Frequency
Phase Margin
Input Noise Voltage1
Input Noise Voltage2
Total Harmonic Distortion
Channel Separation
Positive Slew Rate
Negative Slew Rate
SYMBOL
GB
f
T
M
V
NI
V
N2
THD
CS
+SR
-SR
TEST CONDITION
f=10kHz
A
V
=+100, R
S
=100Ω,
R
L
=2kΩ, C
L
=10pF
A
V
=+100, R
S
=100Ω,
R
L
=2kΩ,C
L
=10pF
f=1kHz, A
V
=+100,
R
S
=100Ω
RIAA, R
S
=2.2kΩ,
30kHz LPF
f=1kHz, A
V
=+10,
R
L
=2kΩ, Vo=5Vrms
f=1kHz, A
V
=-+100, R
S
=1kΩ,
R
L
=2kΩ
A
V
=1, V
IN
=2V
p-p
,
R
L
=2kΩ, C
L
=10pF
A
V
=1, V
IN
=2V
p-p
,
R
L
=2kΩ, C
L
=10pF
MIN.
-
-
-
-
-
-
-
-
-
TYP.
3.3
3.0
60
9.5
1.2
0.002
150
12
13
MAX.
-
-
-
-
3.0
-
-
-
-
UNIT
MHz
MHz
deg
nV/√Hz
Vrms
%
dB
V/s
V/s
Ver.2015-04-13
-3-
MUSES01
Application Notes
•
Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation P
D
. The dependence of the MUSES01 P
D
on ambient temperature is shown in Fig 1. The plots are
depended on following two points. The first is P
D
on ambient temperature 25°C, which is the maximum power dissipation.
The second is 0W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature
Tjmax to the storage temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the P
D
lower than 25°C to it on 25°C. The P
D
is shown following formula as a function of the ambient temperature between those
points.
Dissipation Power
P
D
=
Tjmax - Ta
ja
[W] (Ta=25°C to Ta=150°C)
Where,
ja
is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, P
D
is different in each package.
While, the actual measurement of dissipation power on MUSES01 is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage V
DD
) X (Supply Current I
DD
) – (Output Power Po)
The MUSES01 should be operated in lower than P
D
of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
P
D
[mW]
DIP8
910
Ta [deg]
-40
25
85
(Topr max.)
150
(Tstg max.)
Fig.1 Power Dissipations vs. Ambient Temperature on the MUSES01
-4-
Ver.2015-04-13
MUSES01
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION + NOISE
vs OUTPUT AMPLITUDE（FREQUENCY）
V
+
/V
-
=±16V,A
V
=+10, Rg=1kohm,Rf=9.1kohm, R
L
=2kohm,Ta=25℃
+
TOTAL HARMONIC DISTORTION + NOISE
vs OUTPUT AMPLITUDE（FREQUENCY）
V /V =±15V,A
V
=+10, Rg=1kohm,Rf=9.1kohm, R
L
=2kohm,Ta=25℃
-
10
1
THD+Noise [%]
10
1
THD+Noise [%]
0.1
f=20kHz
0.1
f=20kHz
0.01
1kHz
0.01
0.001
100Hz
1kHz
0.001
0.0001
0.01
0.1
100Hz
20Hz
20Hz
0.0001
1
10
0.01
0.1
1
10
Output Amplitude [Vrms]
TOTAL HARMONIC DISTORTION + NOISE
vs OUTPUT AMPLITUDE（FREQUENCY）
V /V =±9V,A
V
=+10, Rg=1kohm,Rf=9.1kohm, R
L
=2kohm,Ta=25℃
+
-
Output Amplitude [Vrms]
EQUIVALENT INPUT NOISE DENSITY vs
FREQUENCY
80
70
V /V =±16V,A
V
=+100,Rs=100ohm,R
L
=∞,Ta=25℃
+
-
10
1
Noise Density [nV/√Hz]
60
50
40
30
20
10
0
THD+Noise [%]
0.1
f=20kHz
0.01
0.001
1kHz
100Hz
20Hz
0.0001
0.01
0.1
1
10
1
10
100
Frequency [Hz]
1,000
10,000
Output Amplitude [Vrms]
EQUIVALENT INPUT NOISE DENSITY vs
FREQUENCY
80
70
Noise Density [nV/√Hz]
V
+
/V
-
=±15V,A
V
=+100,Rs=100ohm,R
L
=∞,Ta=25℃
EQUIVALENT INPUT NOISE DENSITY vs
FREQUENCY
80
70
Noise Density [nV/√Hz]
60
50
40
30
20
10
0
V /V =±9V,A
V
=+100,Rs=100ohm,R
L
=∞,Ta=25℃
+
-
60
50
40
30
20
10
0
1
10
100
Frequency [Hz]
1,000
10,000
1
10
100
Frequency [Hz]
1,000
10,000
Ver.2015-04-13
-5-
FPGA/CPLD
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