power amplifier operating from 8.5 - 10.5 GHz, with
a saturated pulsed output power of 42 dBm and a
large signal gain of 18 dB.
This power amplifier uses GaAs pHEMT device
technology and is based upon optical gate
lithography to ensure high repeatability and
uniformity. The chip has surface passivation for
protection and backside via holes and gold
metallisation to allow a conductive epoxy die attach
process.
This device is well suited for communications, Point
to Point radio and radar applications.
Pin Configuration
2
1
2
3
4
5
6
7
8
V
G
1
GND
V
SS
1
V
1_5
GND
V
SS
2
V
2_5
GND
V
G
2
V
D
1
GND
GND
V
D
2
RF
OUT
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
D
2
GND
GND
V
D
1
V
G
2
GND
V
2_5
V
SS
2
GND
V
1_5
V
SS
1
GND
V
G
1
RF
IN
Ordering Information
9
10
MAAP-015036-DIE
MAAP-015036-DIEEV1
MAAP-015036-DIEEV2
1. Die quantity varies.
Die in Gel Pack
1
Sample Board
Direct Gate Bias
Sample Board
On-Chip Gate Bias
11
12
13
14
2. Backside metal is RF, DC and thermal ground.
1
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015036
Power Amplifier, 15 W
8.5 - 10.5 GHz
Electrical Specifications - Pulsed Operation:
Duty Cycle = 5%, Pulse = 5 µs,
Freq. = 8.5 - 10.5 GHz, T
A
= +25°C, Z
0
= 50 Ω, , P
IN
= 26 dBm, V
G
= -0.9 V
Gain (Large Signal)
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Saturated Output Power (8.5 - 10.5 GHz)
Saturated Output Power (9.0 - 10.0 GHz)
Power Added Efficiency
8.5 - 9.0 GHz
9.0 - 10.0 GHz
10.0 - 10.5 GHz
Drain Bias Voltage
Drain Current
dB
dB
dB
dB
dB
dBm
—
—
—
—
—
40.5
41.0
17
17
1
-15
-25
42
—
—
—
—
—
—
Rev. V1
%
—
45
45
43
8.0
4.8
—
V
A
—
3.5
—
5.5
Absolute Maximum Ratings
3,4
Input Power
Drain Voltage
Gate Voltage
Bias Voltage
Drain Current
Gate Current (Direct Bias)
Gate Current
(On Chip Bias)
Operating Temperature
Junction Temperature
5,6
30 dBm
+8.5 V
-3.0 V < V
G
< -0.0 V
-6.0 V < V
SS
< -4.0 V
6A
160 mA
165 mA
-40°C to +85°C
+170°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM Class
1A devices.
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near
these survivability limits.
5. Operating at nominal conditions with T
J
≤ +160°C will ensure
MTTF > 1.0 x 10
6
hours.
6. Typical thermal resistance (Өjc) = 5.7°C/W.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015036
Power Amplifier, 15 W
8.5 - 10.5 GHz
Bonding Diagram - On Chip Bias
7
Rev. V1
Bonding Diagram - Direct Gate Bias
7
7. Components C1 - C8 are all 120 pF chips.
MMIC Bare Die
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015036
Power Amplifier, 15 W
8.5 - 10.5 GHz
Pulsed Performance Curves over Gate Voltage: V
D
= 8 V, Duty Cycle = 5%, Pulse = 5 µs
Gain vs. Frequency
Reverse Isolation vs. Frequency
Rev. V1
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015036
Power Amplifier, 15 W
8.5 - 10.5 GHz
Gain vs. Frequency
Output Power vs. Frequency
Rev. V1
Pulsed Performance Curves over Gate Voltage: P
IN
= 25 dBm, Duty Cycle = 5%, Pulse = 5 µs
Drain Current vs. Frequency
PAE vs. Frequency
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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