SMD Schottky Barrier Diode
CDBUR0230-HF
I
o
= 200 mA
V
R
= 30 Volts
RoHS Device
Halogen Free
Features
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Low drop-down voltage.
-Majority carrier conduction.
0.039(1.00)
0.031(0.80)
0603/SOD-523F
0.071(1.80)
0.063(1.60)
Mechanical data
0.033(0.85)
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & B5
-Mounting position: Any
-Weight: 0.003 gram(approx.).
0.028(0.70) Typ.
0.027(0.70)
0.018(0.45) Typ.
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Power Dissipation
Sunction temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
35
30
200
3000
150
-40
+125
+125
V
V
mA
mA
mW
O
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
P
D
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
Capacitance between terimnals
V
R
= 30V
Conditions
I
F
= 200 mA DC
Symbol Min Typ Max Unit
V
F
I
R
C
T
9
0.50
30
V
uA
pF
F = 1 MHZ and 10 VDC reverse voltage
REV:A
QW-G1065
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBUR0230-HF)
Fig. 1 - Forward characteristics
1000
10m
1m
Fig. 2 - Reverse characteristics
100
Reverse current ( A )
Forward current (mA )
125 C
O
100u
75 C
O
10
10u
1u
25 C
O
1
C
O
C
O
C
12
25
-25
0.1
5
75
C
O
O
100n
10n
1n
O
0.01
-25 C
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
100
Fig.4 - Current derating curve
Mounting on glass epoxy PCBs
Average forward current(%)
3
5
f = 1 MHz
Ta = 25 C
100
80
10
60
40
20
1
0
5
0
0
25
50
75
100
O
1
0
5
1
2
0
2
5
3
0
125
150
Reverse voltage (V)
Ambient temperature ( C)
REV:A
QW-G1065
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
Polarity
W
C
P
A
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.00 ± 0.10
0.039
±
0.004
B
1.85 ± 0.10
0.073
±
0.004
C
1.00 ± 0.10
0.039
±
0.004
d
1.55 ± 0.05
0.061
±
0.002
D
178 ± 1
7.008
±
0.04
D
1
60.0 MIN.
2.362 MIN.
D
2
13.0 ± 0.20
0.512
±
0.008
0603
(SOD-523F)
(mm)
(inch)
SYMBOL
E
1.75 ± 0.10
0.069
±
0.004
F
3.50 ± 0.05
0.138
±
0.002
P
4.00 ± 0.10
0.157
±
0.004
P
0
4.00 ± 0.10
0.157
±
0.004
P
1
2.00 ± 0.05
0.079
±
0.004
T
0.23 ± 0.05
0.009
±
0.002
W
8.00 ± 0.20
0.315
±
0.008
W
1
13.5 MAX.
0.531 MAX.
0603
(SOD-523F)
(mm)
(inch)
REV:A
QW-G1065
Page 3
Comchip Technology CO., LTD.
嵌入式系统
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