SMD Schottky Barrier Rectifiers
CDBMHT340-HF Thru. CDBMHT3100-HF
Reverse Voltage: 40 to 100 Volts
Forward Current: 3.0 Amp
RoHS Device
Halogen Free
Features
- Excellent power dissipation offersbetter reverse
leakage current and thermal resistance.
- Low profile package is 40% thinner than standards
SOD-123.
-
Low power loss, high efficiency.
-
High current capability, low forward voltage drop.
-
High surge capability.
-
Guard ring for overvoltage protection.
-
Ultra high-speed switching.
-
Silicon epitaxial planar chip, metal silicon junction.
-
Heat sink bottom.
-
Lead-free parts meet environmental standards of
MIL-STD-19500/228
SOD-123HT
0.146(3.70)
0.130(3.30)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
0.039(1.00)
0.024(0.60)
0.031(0.10) Typ.
0.083(2.10)
0.075(1.90)
0.024(0.6) Typ.
0.051(1.30)
0.043(1.10)
0.031(0.80)
0.024(0.60)
0.031(0.80) Typ.
Mechanical data
- Epoxy : UL94-V0 rated flame retardant.
- Case: Molded plastic, SOD-123HT/Mini SMA.
- Terminals: Solderable per MIL-STD-750, method 2026.
- Polarity: Indicated by cathode band.
- Mounting Position : Any.
- Weight: 0.011 grams approx.
Dimensions in inches and (millimeter)
0.047(1.20)
0.039(1.00)
0.047(1.20)
0.039(1.00)
0.033(0.85)
0.030(0.75)
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Max. Forward rectified current
Maximum forward voltage at I
F
=3.0A
Max. Forward surge current, 8.3ms single
half sine-wave superimposed on rated
load (JEDEC method)
V
R
=V
RRM
T
J
=25°C
Max. Reverse current
V
R
=V
RRM
T
J
=100°C
Junction to ambient
Thermal resistance
Junction to case
Typ. Diode junction capacitance (Note 1)
Operating temperature
Storage temperature range
Note : 1. F=1MHz and applied 4V DC reverse voltage
Symbol
V
RRM
V
R
V
RMS
I
O
V
F
I
FSM
I
R
I
R
R
θJA
R
θJC
C
J
T
J
T
STG
CDBMH
T340-HF
40
40
28
CDBMH
T360-HF
60
60
42
3.0
CDBMH
T3100-HF
100
100
70
Unit
V
V
V
A
0.55
0.70
50
0.2
0.85
V
A
mA
10
70
35
160
-55 to +125
-55 to +150
-65 to +175
°C/W
°C/W
pF
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB056
REV:A
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
Rating and Characteristic Curves (CDBMHT340-HF Thru. CDBMHT3100-HF)
Fig.1- Typical Forward Current Derating Curve
100
Fig.2- Typical Forward Characteristics
Instantaneous Forward Current (A)
Average Forward Current, (A)
3.0
2.5
2.0
CD
HT3
BM
0
T34
MH
CDB
-HF
6 0-
HF
10
CD
HT3
BM
CD
HT3
BM
6 0-
HF
~C
C
MH
DB
0
T31
F
0-H
1
1.5
1.0
0.5
0
0
25
50
75
MH
DB
Ambient Temperature, (°C)
Fig.3- Maximum Non-repetitive
Forward Surge Current
50
700
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
40-
HF
0
T31
0-H
F
0.1
T
J
=25°C
Pulse Width 300
US
1% Duty Cycle
0.01
100
125
150
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
F
, Forward Voltage (V)
Fig.4- Typical Junction Capacitance
Peak Forward Surge Current, (A)
Junction Capacitance (pF)
1
10
100
40
600
500
400
300
200
100
30
20
10
0
0
0.01
0.1
1
10
100
Number of Cycles at 60Hz
Reverse Voltage, (V)
Fig.5- Typical Reverse Characteristics
100
Reverse Leakage Current, (mA)
10
T
J
=100°C
1
T
J
=75°C
0.1
T
J
=25°C
0.01
0
40
80
120
160
200
Percent of Rated Peak Reverse Voltage, (%)
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB056
REV:A
Page 2
Comchip Technology CO., LTD.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
