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SR170

产品描述1 A, 80 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小229KB,共2页
制造商SHUNYE
官网地址http://www.shunyegroup.com.cn/
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SR170概述

1 A, 80 V, SILICON, SIGNAL DIODE, DO-41

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SR120 THRU SR1A0
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 100 Volts
DO-41
Forward Current -
1.0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
MECHANICAL DATA
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SR SR
120 130
SR
140
SR SR
150 160
SR
170
SR
180
SR
190
SR
1A0
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
70
49
70
80
56
80
90
63
90
100
70
100
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
T
STG
110
-65 to +125
0.55
40.0
0.70
1.0
10.0
80
50.0
-65 to +150
-65 to +150
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com.cn

SR170相似产品对比

SR170 SR120 SR130 SR140 SR150 SR160 SR180 SR190 SR1A0
描述 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 90 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41

 
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