电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

KPBC808

产品描述3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小229KB,共2页
制造商SHUNYE
官网地址http://www.shunyegroup.com.cn/
下载文档 选型对比 全文预览

KPBC808概述

3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

文档预览

下载PDF文档
KPBC8005 THRU KPBC810 AND BR805 THRU BR810
SILICON BRIDGE RECTIFIERS
Reverse Voltage -
50 to 1000 Volts
BR-8
Forward Current -
8.0 Amperes
FEATURES
0.296(7.5)
0.255(6.5)
0.042(1.1) DIA.
0.039(1.0) TYP.
0.750
(19.1)
MIN.
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,at 5 lbs. (2.3kg) tension
0.770(19.6)
0.730(18.5)
0.52(13.2)
0.48(12.2)
HOLE FOR
NO.6 SCREW
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting:Thru
hole for #6 serew,5in.-lbs. torque max.
Weight:0.20o
unce, 5.62 grams
AC
0.52(13.2)
0.48(12.2)
0.770(19.6)
0.730(18.5)
AC
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
KPBC
8005
BR805
KPBC
801
BR81
KPBC
802
BR82
KPBC
804
BR84
KPBC
806
BR86
KPBC
808
BR88
KPBC
810
BR810
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
Maximum repetitive peak reverse voltage
50
100
200
400
600
V
RMS
Maximum RMS voltage
35
70
140
280
420
V
DC
Maximum DC blocking voltage
50
100
200
400
600
Maximum average
T
C
=50 C (Note 1)
8.0
I
(AV)
forward output
T
C
=100 C (Note 1)
6.0
rectified current at
T
A
=50 C (Note 2)
6.0
Peak forward surge current
I
FSM
8.3ms single half sine-wave superimposed on
125.0
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
I
2
t
64
Maximum instantaneous forward voltage drop
V
F
1.1
per bridge element at 4.0A
Maximum DC reverse current
T
A
=25 C
10
I
R
at rated DC blocking voltage
T
A
=100 C
1.0
Isolation voltage from case to leads
V
ISO
2500
Typical Thermal Resistance (Note 1)
R
q
JA
6.0
Operating junction temperature range
T
J
-55 to +125
storage temperature range
T
STG
-55 to +150
NOTES:
1.Unit mounted on 8.7” x 8.7” x0.24” thick(22x22x0.6cm)Al.plate.
2.Unit mounted on P.C. board with 0.47” x 0.47”(12x12mm) copper pads,0.375”(9.5mm) lead length.
800
560
800
1000
700
1000
Amps
A
2
s
Volts
u
A
mA
V
AC
C/W
C
C
www.shunyegroup.com.cn

KPBC808相似产品对比

KPBC808 KBPC8005 KPBC801 KPBC802 KPBC804 KPBC806 KPBC810
描述 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2695  1458  1038  241  1201  32  44  8  43  26 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved