1N5819U
Aerospace 45 V power Schottky rectifier
Datasheet
-
production data
Description
A
K
K
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package.
The 1N5819U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
A
Leadless chip carrier 2 (LCC2B)
Features
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package mass: 0.18 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
ESCC qualified
Table 1. Device summary
(1)
Order code
1N5819UB1
1N5819U01B 5106/021/02
1N5819U02B 5106/021/03
ESCC
detailed
specification
Quality level
Lead
finish
EPPL
I
F(AV)
V
RRM
T
j(max)
VF
(max)
Engineering model Gold
ESCC
ESCC
Gold
Solder dip
yes
yes
1
45
150
0.49
1. Contact ST sales office for information about the specific conditions for products in die form.
December 2015
This is information on a product in full production.
DocID16006 Rev 5
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www.st.com
Characteristics
1N5819U
1
Characteristics
Table 2. Absolute ratings (limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
T
sol
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward rectified current
Forward surge current
Storage temperature range
Maximum operating junction temperature
(1)
Maximum soldering temperature
(2)
condition to avoid runaway for a diode on its own heatsink
Value
45
10
T
c
≥
142 °C
δ
= 0.5
t
p
= 10 ms sinusoidal
1
25
-65 to +150
150
245
Unit
V
A
A
A
°C
°C
°C
1.
dP
tot
1
_________
<
__________
R
th(j-a)
dT
j
2. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Table 3. Thermal resistance
Symbol
R
th (j-c)
Junction to case
Parameter
Value
16
Unit
C/W
2/10
DocID16006 Rev 5
1N5819U
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
T
j
= 25 °C
T
j
= 100 °C
T
j
= -55 °C
T
j
= -55 °C
I
R
(1)
Characteristics
Min.
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
20
3.5
20
10
15
3
2.5
1.6
1.2
1
350
490
450
650
800
Unit
µA
mA
V
R
= 45 V
V
R
= 45 V
V
R
= 40 V
V
R
= 40 V
V
R
= 35 V
V
R
= 24 V
V
R
= 12 V
V
R
= 6 V
I
F
= 0.1 A
-
-
-
-
-
-
-
-
-
-
-
µA
Reverse leakage
current
T
j
= 25 °C
T
j
= 100 °C
T
j
= 100 °C
T
j
= 100 °C
T
j
= 100 °C
T
j
= 100 °C
T
j
= 25 °C
T
j
= 25 °C
mA
V
F(2)
Forward voltage drop
T
j
= 100 °C
T
j
= - 55 °C
T
j
= 25 °C
I
F
= 1A
-
-
mV
I
F
= 3.1 A
-
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 680 µs,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 0.285 x
IF(AV)
+ 0.165 x I
F2(RMS )
Table 5. Dynamic characteristics
Symbo
l
C
j
Parameter
Diode capacitance
Test conditions
Min Ty Max Uni
.
p.
.
t
-
-
70
pF
V
R
= 5 V, F = 1 MHz
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10
Characteristics
1N5819U
Figure 1. Average forward power dissipation
versus average forward current
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
0.4
06
0.8
1.0
1.2
0.2
δ
=t
p
/ T
Figure 2. Average forward current versus
ambient temperature ( = 0.5)
1.2
P
F(AV)
(W)
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
δ
=1
I
F(AV)
(A)
R
th(j-a)
= R
th(j-c)
1.0
0.8
0.6
0.4
T
t
p
T
δ
=t
p
/ T
t
p
I
F(AV)
(A)
1.4
1.6
0.0
T
amb
(°C)
0
25
50
75
100
125
150
Figure 3. Non repetitive surge peak forward
current versus overload duration (maximum
values)
I
M
(A)
16
14
12
10
8
6
4
2
0
1.E-03
I
M
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
1.0
0.9
0.8
0.7
Z
th(j-c)
/ R
th(j-c)
T
C
= 25 °C
T
C
= 75 °C
T
C
= 125 °C
δ
= 0.5
t
0.6
0.5
0.4
0.3
0.2
Single pulse
t(s)
1.E-02
1.E-01
1.E+00
0.1
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t
p
(s)
1.E+01
Figure 5. Reverse leakage current versus
reverse voltage applied (typical values)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
0.0
Figure 6. Forward voltage drop versus forward
current (typical values)
10.00
I
R
(mA)
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
T
j
= 50 °C
T
j
= 25 °C
I
FM
(A)
1.00
T
j
= 100 °C
T
j
= 25 °C
0.10
V
R
(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01
T
j
= -55 °C
V
FM
(V)
0.7
0.8
0.9
1.0
1.1
1.2
0.0 0.1
0.2
0.3
0.4
0.5
0.6
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DocID16006 Rev 5
1N5819U
Characteristics
Figure 7. Non repetitive surge peak forward current versus number of cycles
I
FSM
(A)
30
25
20
15
10
5
0
0
Number of cycles
10
100
1000
F = 50 Hz
T
j initial
= 25 °C
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